Search Results (115)

Quantum beams-including X-rays, synchrotron radiation, electrons, neutrons, ions, and ultrafast photon sources-are indispensable tools for probing the structure, dynamics, and electronic properties of matter. The excitation time scale ${\tau }_{exc}$ is defined operationally as the characteristic temporal interval governing externally imposed energy deposition events within the interaction volume, such as pulse duration, bunch spacing, or beam dwell time. Interpretation of beam–matter interactions has traditionally relied on steady-state or quasi-equilibrium assumptions, implicitly presuming that intrinsic material relaxation processes can accommodate externally imposed excitation. Recent advances in high-brightness synchrotron sources, X-ray free-electron lasers (XFELs), and pulsed electron beams increasingly operate in regimes where this assumption is strained, and systematic nonequilibrium effects, radiation damage, and irreversible transformations are reported even under routine experimental conditions. This work examines the role of time-scale mismatch between beam-driven energy deposition and intrinsic material relaxation as a governing constraint in beam–matter interactions. Analyzing the hierarchy of excitation, electronic relaxation, phonon coupling, and thermal diffusion time scales, the analysis introduces a dimensionless mismatch parameter $\mathsf{\Lambda }={\displaystyle \frac{{\tau }_{rel}}{{\tau }_{exc}}}$, which quantifies the competition between externally imposed excitation and intrinsic relaxation processes in beam–matter interactions. The resulting framework provides a unified physical interpretation of beam-induced damage, signal distortion, dose dependence, and nonlinear response across quantum beam modalities, framing these effects as consequences of forced nonequilibrium dynamics rather than technique-specific artifacts. Full article

Percentage depth–dose (PDD) distributions are fundamental to characterizing radiation beams in radiotherapy. This review provides an overview of both methods and sensor technologies for measuring PDD in photon, electron, proton, and carbon-ion beams. We summarize conventional dosimetry techniques, including water-phantom scanning with ionization chambers (cylindrical and parallel-plate) and radiochromic film, and discuss their strengths (established accuracy, calibration traceability) and limitations (volume averaging, delayed readout). We then examine emerging sensor technologies designed to improve spatial resolution, speed, and radiation hardness: multi-layer ionization chambers and Faraday cups for one-shot PDD acquisition; scintillator-based detectors (liquid, plastic, and fiber-optic) enabling real-time and high-resolution depth–dose measurements; advanced semiconductor detectors including silicon carbide diodes; as well as novel approaches such as ionoacoustic range sensing for proton beams. For each modality and detector type, we emphasize clinical relevance, measurement accuracy, spatial resolution, radiation durability, and suitability for high dose-per-pulse environments (e.g., FLASH radiotherapy). Current challenges, such as detector response in regions of steep dose gradient, saturation or recombination at ultra-high dose rates, and energy-dependent sensitivity in mixed radiation fields, are analyzed in detail. We also highlight the limitations of each technique and discuss ongoing improvements and prospects for clinical implementation. In summary, no single detector technology fully satisfies all requirements for fast, high-accuracy, high-resolution, radiation-hard PDD measurement, but the integration of emerging sensor innovations into clinical dosimetry promises to enhance the precision and efficiency of radiotherapy quality assurance. Full article

Biocompatible thin films are essential for advancing biomedical devices, as they enhance integration with biological tissues, improve device longevity, and reduce complications. The rapid evolution of both medical needs and materials science has led to a diverse array of deposition techniques, each offering unique advantages and challenges for tailoring surface properties without compromising the bulk characteristics of implants and sensors. While laser-based methods—such as pulsed laser deposition (PLD) and Matrix-Assisted Pulsed Laser Evaporation (MAPLE)—are renowned for their precision, ability to preserve complex material stoichiometry, and suitability for low-temperature processing, the broader landscape includes several other important approaches. Physical Vapor Deposition (PVD) techniques, including magnetron sputtering and pulsed electron deposition, are widely used for their ability to create uniform, adherent coatings with controlled thickness and composition, making them suitable for both hard and soft biomedical substrates. Chemical Vapor Deposition (CVD) and its plasma-enhanced variant (PECVD) offer conformal coatings and excellent control over film chemistry, which is particularly valuable for functional polymer and ceramic films. Other methods, such as sol–gel processing, ion beam deposition, and electrophoretic deposition, provide additional flexibility in terms of coating composition, adhesion, and processing temperature, allowing for the fabrication of films with tailored mechanical, chemical, and biological properties. Despite these advances, the field faces ongoing challenges in optimizing film properties for specific clinical applications, ensuring reproducibility, and scaling up production for widespread use. The necessity of this review lies in its comprehensive comparison of laser-based techniques with alternative deposition methods, providing critical insights into their respective strengths, limitations, and suitability for different biomedical scenarios. By synthesizing recent developments and highlighting current gaps, this review aims to guide researchers and clinicians in selecting the most appropriate thin-film deposition strategies to meet the evolving demands of next-generation biomedical devices. Full article

The rapid advancement of high-performance electronics has intensified the demand for wide-bandgap semiconductor materials capable of operating under high-power and high-temperature conditions. Among these, silicon carbide (SiC) has emerged as a leading candidate due to its superior thermal conductivity, chemical stability, and mechanical strength. However, the high cost and complexity of SiC wafer fabrication, particularly in slicing and exfoliation, remain significant barriers to its widespread adoption. Conventional methods such as wire sawing suffer from considerable kerf loss, surface damage, and residual stress, reducing material yield and compromising wafer quality. Additionally, techniques like smart-cut ion implantation, though capable of enabling thin-layer transfer, are limited by long thermal annealing durations and implantation-induced defects. To overcome these limitations, ultrafast laser-based processing methods, including laser slicing and stealth dicing (SD), have gained prominence as non-contact, high-precision alternatives for SiC wafer exfoliation. This review presents the current state of the art and recent advances in laser-based precision SiC wafer exfoliation processes. Laser slicing involves focusing femtosecond or picosecond pulses at a controlled depth parallel to the beam path, creating internal damage layers that facilitate kerf-free wafer separation. In contrast, stealth dicing employs laser-induced damage tracks perpendicular to the laser propagation direction for chip separation. These techniques significantly reduce material waste and enable precise control over wafer thickness. The review also reports that recent studies have further elucidated the mechanisms of laser–SiC interaction, revealing that femtosecond pulses offer high machining accuracy due to localized energy deposition, while picosecond lasers provide greater processing efficiency through multipoint refocusing but at the cost of increased amorphous defect formation. The review identifies multiphoton ionization, internal phase explosion, and thermal diffusion key phenomena that play critical roles in microcrack formation and structural modification during precision SiC wafer laser processing. Typical ultrafast-laser operating ranges include pulse durations from 120–450 fs (and up to 10 ps), pulse energies spanning 5–50 µJ, focal depths of 100–350 µm below the surface, scan speeds ranging from 0.05–10 mm/s, and track pitches commonly between 5–20 µm. In addition, the review provides quantitative anchors including representative wafer thicknesses (250–350 µm), typical laser-induced crack or modified-layer depths (10–40 µm and extending up to 400–488 µm for deep subsurface focusing), and slicing efficiencies derived from multi-layer scanning. The review concludes that these advancements, combined with ongoing progress in ultrafast laser technology, represent research opportunities and challenges in transformative shifts in SiC wafer fabrication, offering pathways to high-throughput, low-damage, and cost-effective production. This review highlights the comparative advantages of laser-based methods, identifies the research gaps, and outlines the challenges and opportunities for future research in laser processing for semiconductor applications. Full article

The interaction of an ultra-short, high-power laser pulse with a solid target, in the so-called Target Normal Sheath Acceleration (TNSA) configuration, produces particles in the MeV range. Fast electrons can escape from the target after the interaction, inducing electrostatic fields on the order of TV/m close to the target surface. These fields accelerate MeV protons and heavy ions at the rear of the target, allowing them to escape. The complete process is difficult to probe, as it occurs on the sub-ps timescale. At the INFN-LNF SPARC_LAB test facility, single-shot diagnostics such as the Electro-Optic Sampling (EOS) are being developed and tested for time-resolved direct measurements of the produced electrons and associated longitudinal electric fields. Electrons are the core of the process, and their properties determine the following production of positive charge particles and electromagnetic radiation. Different target geometries and materials are being investigated to analyze the enhancement of fast electron emission and the correlation with positive charge production. Simultaneous observations of electron and proton beams have been performed using two diagnostic lines, the EOS for electrons and a time-of-flight (TOF) detector for protons. This work provides an overview of the previous experiments performed at SPARC_LAB dedicated to the TNSA characterization. Full article

Nanostructured targets are increasingly used as key components in high-power laser–matter interaction experiments due to their ability to substantially enhance laser absorption, increase ion/electron generation, or boost the secondary radiation (THz, X-ray, etc.) in accordance with the actual scientific requirements in ultraintense regimes. Their tailored surface features influence the way the energy is deposited in the material, leading to significantly enhanced interaction effects compared to the flat conventional targets. In this study, we numerically investigate the mechanisms of laser field intensification occurring in the interaction between an ultraintense laser pulse and a nanostructured conical target. In order to provide a complex spatio-temporal description of the laser intensity evolution in the interaction area, we developed a 2D finite-difference time-domain model in accordance with the relative spatial extension of the pulse. The laser field intensification is numerically investigated in the vicinity of the laser matter interaction point considering four different materials of the nanopatterned conical targets and variable laser beam parameters in order to determine the optimum conditions to streamline the laser field enrichment in the laser solid targets interaction area. The numerical results show that the designed nanostructured profile of the internal cone target walls under imposed particular conditions induces a highly controllable increase in laser field intensity. Consequently, this enhanced field localization highlights the essential role of nanostructured design in advancing ultraintense laser applications that require efficient energy coupling and extreme field concentrations. Full article

Magnesium alloy micro-arc oxidation (MAO) coatings are limited in biomedical applications due to their poor corrosion resistance. High-intensity pulsed ion beam (HIPIB) treatment enhances corrosion resistance as well as biocompatibility, but the underlying mechanisms are not well understood. In this study, CCK-8 assays, flow cytometry, and ALP activity tests were employed to investigate the bioactivity of the MAO coatings, and the surface properties of the coatings were characterized by SEM observation. Compared with pristine coating, the porosity of the MAO coating decreased by 9.44%, calcium content increased by 0.23%, and surface roughness and hydrophobicity increased to 7.57 and 102.11, respectively, with HIPIB irradiation. CCK-8 assays showed that the HIPIB-modified coating significantly improved cell proliferation, with a growth rate increase to 61.29% on Day 3. Flow cytometry analysis revealed accelerated cell cycle progression, especially a faster transition from the G1 to S and G2 phases, indicative of enhanced proliferation. Increased ALP activity further indicated that the irradiated coatings promoted osteogenic differentiation. The formed remelted dense layer with an increase in Ca content and high roughness induced by HIPIB irradiation not only acts as a corrosion barrier but also promotes the adhesion and differentiation of osteoblasts, which is mainly responsible for the enhancement of biological properties. Full article

This study investigates the effects and mechanisms of high-power microwave on GaN HEMTs. By injecting high-power microwave from the gate into the device and employing techniques such as DC characteristics, gate-lag effect analysis, low-frequency noise measurement, and focused ion beam (FIB) cross-sectional inspection, a systematic investigation was conducted on GaN HEMT degradation and failure behaviors under conditions of a low duty cycle and narrow pulse width. Experimental results indicate that under relatively low-power HPM stress, GaN HEMT exhibits only a slight threshold voltage shift and a modest increase in transconductance, attributed to the passivation of donor-like defects near the gate. However, when the injected power exceeds 43 dBm, the electric field beneath the gate triggers avalanche breakdown, forming a leakage path and causing localized heat accumulation, which ultimately leads to permanent device failure. This study reveals the physical failure mechanisms of GaN HEMTs under low-duty-cycle HPM stress and provides important guidance for the reliability design and hardening protection of RF devices. Full article

Lithium fluoride (LiF) crystals are widely employed both as optical windows transparent in the ultraviolet spectral region and as efficient personal dosimeters, with their application scope recently expanding into lithium-ion technologies. Moreover, as an alkali halide crystal (AHC), LiF serves as a model system for studying and simulating radiation effects in solids. This work identifies radiation-induced defects formed in lithium fluoride upon irradiation with swift heavy ion beams (N, O, Kr, U) and intense pulsed electron beams, investigates their thermal stability, and performs computer modeling of annealing processes. The theoretical analysis of existing experimental kinetics for $F$-centers induced by electron and heavy ion irradiation reveals considerable differences in the activation energies for interstitial migration. A strong correlation between the activation energy $E_a$ and the pre-exponential factor $X$($E_a$) is observed; notably, $X$($E_a$) is no longer constant but closely matches the potential function Ea. Indeed, with increasing irradiation dose, both the migration energy $E_a$ and pre-exponential factor $X$ decrease simultaneously, leading to an effective increase in the defect diffusion rate. Full article

4H-silicon carbide (4H-SiC) is a cornerstone for next-generation optoelectronic and power devices owing to its unparalleled thermal, electrical, and optical properties. However, its chemical inertness and low dopant diffusivity for most dopants have historically impeded effective doping. This study unveils a transformative laser-assisted boron doping technique for n-type 4H-SiC, employing a pulsed Nd:YAG laser (λ = 1064 nm) with a liquid-phase boron precursor. By leveraging a heat-transfer model to optimize laser process parameters, we achieved dopant incorporation while preserving the crystalline integrity of the substrate. A novel optical characterization framework was developed to probe laser-induced alterations in the optical constants—refraction index ($\mathrm{n}$) and attenuation index ($\mathrm{k}$)—across the MIDIR spectrum (λ = 3–5 µm). The optical properties pre- and post-laser doping were measured using Fourier-transform infrared spectrometry, and the corresponding complex refraction indices were extracted by solving a coupled system of nonlinear equations derived from single- and multi-layer absorption models. These models accounted for the angular dependence in the incident beam, enabling a more accurate determination of $\mathrm{n}$ and $\mathrm{k}$ values than conventional normal-incidence methods. Our findings indicate the formation of a boron-acceptor energy level at 0.29 eV above the 4H-SiC valence band, which corresponds to λ = 4.3 µm. This impurity level modulated the optical response of 4H-SiC, revealing a reduction in the refraction index from 2.857 (as-received) to 2.485 (doped) at λ = 4.3 µm. Structural characterization using Raman spectroscopy confirmed the retention of crystalline integrity post-doping, while secondary ion mass spectrometry exhibited a peak boron concentration of 1.29 × 10¹⁹ cm⁻³ and a junction depth of 450 nm. The laser-fabricated p–n junction diode demonstrated a reverse-breakdown voltage of 1668 V. These results validate the efficacy of laser doping in enabling MIDIR tunability through optical modulation and functional device fabrication in 4H-SiC. The absorption models and doping methodology together offer a comprehensive platform for paving the way for transformative advances in optoelectronics and infrared materials engineering. Full article

This study developed a neutron-beam-focusing supermirror for grazing-incidence small-angle neutron scattering (GISANS) measurements. We adopted point-to-point beam focusing based on an ellipse whose two foci correspond to a virtual point source and a spot on the detector surface. The focusing supermirror was fabricated by depositing NiC/Ti supermirror film with ion-beam sputtering on a precise elliptic surface of fused quartz figured using the elastic emission machining technique. Neutron measurements at the pulsed neutron reflectometer BL17 of the MLF, J-PARC, successfully demonstrated that the focusing supermirror enhances the beam intensity twentyfold compared with an optimally collimated beam, achieving a signal-to-background ratio of the focal spot as high as 500. The mirror can be readily installed and used at BL17 for time-of-flight GISANS measurements. Full article

Direct-writing submicron copper circuits on glass with laser precision—without lithography, vacuum deposition, or etching—represents a transformative step in next-generation microfabrication. We present a high-resolution, maskless method for metallizing glass using ultrashort pulse Bessel beam laser processing, followed by silver ion activation and electroless copper plating. The laser-modified glass surface hosts nanoscale chemical defects that promote the in situ reduction of Ag⁺ to metallic Ag⁰ upon exposure to AgNO₃ solution. These silver seeds act as robust catalytic and adhesion sites for subsequent copper growth. Using this approach, we demonstrate circuit traces as narrow as 0.7 µm, featuring excellent uniformity and adhesion. Compared to conventional redistribution-layer (RDL) and under-bump-metallization (UBM) techniques, this process eliminates multiple lithographic and vacuum-based steps, significantly reducing process complexity and production time. The method is scalable and adaptable for applications in transparent electronics, fan-out packaging, and high-density interconnects. Full article

Long-term stability and laser-induced damage resistance of optical components in the UV region are critical for enhancing their performance in UV high-power laser applications. This study evaluates the laser-induced damage threshold (LIDT) of commercially available UV optical windows with anti-reflective (AR) coating, produced through various coating techniques and designed for high-power lasers. A third-harmonic (343 nm) wavelength with good beam quality was generated in the picosecond regime to investigate the LIDT of optical components. The LIDT for each sample was measured under controlled conditions and compared based on their coating techniques. The sample coated with Al₂O₃/SiO₂ through ion beam sputtering has the best LIDT value, of 0.6 J/cm², among the tested samples, based on the hundred-thousand-pulses methodology. The damage threshold curve and the corresponding damage morphology are discussed in detail, and these findings provide insights into the durability and susceptibility of UV optics for advanced laser systems available in the market. Full article

In the present work, chemical and ion beam surface treatments were performed in order to modify the electrochemical behavior of industrial austenitic–martensitic steel VNS-5 in 3.5 wt. % NaCl. Immersion for 140 h in a solution containing 0.05 M potassium dichromate and 10% phosphoric acid promotes formation of chromium hydroxides in the outer surface layer. By means of a new type of ion source, based on a high-current pulsed magnetron discharge with injection of electrons from vacuum arc plasma, ion implantation with Ar⁺ and Cr⁺ ions of the VNS-5 steel was performed. It has been found that the ion implantation leads to formation of an Fe- and Cr-bearing oxide layer with advanced passivation ability. Moreover, the ion beam-treated steel exhibits a lower corrosion rate (by ~7.8 times) and higher charge transfer resistance in comparison with an initial (mechanically polished) substrate. Comprehensive electrochemical and XPS analysis has shown that a Cr₂O₃-rich oxide film is able to provide an improved corrosion performance of the steel, while the chromium hydroxides may increase the specific conductivity of the surface layer. A scheme of a charge transfer between the microgalvanic elements was proposed. Full article

We present the performance and application of a commercial off-the-shelf Si PIN diode (Hamamatsu S14605) as a charged particle detector in a compact ion beam system (IBS) capable of generating D–D and p–B fusion charged particles. This detector is inexpensive, widely available, and operates in photoconductive mode under a reverse bias voltage of 12 V, supplied by an A23 battery. A charge-sensitive preamplifier (CSP) is mounted on the backside of the detector’s four-layer PCB and powered by two ±3 V lithium batteries (A123). Both the detector and CSP are housed together on the vacuum side of the IBS, facing the fusion target. The system employs a CF-2.75-flanged DB-9 connector feedthrough to supply the signal, bias voltage, and rail voltages. To mitigate the high sensitivity of the detector to optical light, a thin aluminum foil assembly is used to block optical emissions from the ion beam and target. Charged particles generate step responses at the preamplifier output, with pulse rise times in the order of 0.2 to 0.3 µs. These signals are recorded using a custom-built data acquisition unit, which features an optical fiber data link to ensure the electrical isolation of the detector electronics. Subsequent digital signal processing is employed to optimally shape the pulses using a CR-RCⁿ filter to produce Gaussian-shaped signals, enabling the accurate extraction of energy information. Performance results indicate that the detector’s baseline RMS ripple noise can be as low as 0.24 mV. Under actual laboratory conditions, the estimated signal-to-noise ratios (S/N) for charged particles from D–D fusion—protons, tritons, and helions—are approximately 225, 75, and 41, respectively. Full article