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Keywords = output back-off (OBO) efficiency

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13 pages, 1759 KiB  
Review
Load Mismatch Compensation of Load-Modulated Power Amplifiers: A Comprehensive Review
by Yufeng Zang, Weimin Shi, Jinting Liu, Tian Qi and Mingyu Li
Energies 2025, 18(9), 2157; https://doi.org/10.3390/en18092157 - 23 Apr 2025
Viewed by 603
Abstract
With the diversification, acceleration, and arraying of wireless communication systems, power amplifiers (PAs) face stricter demands in terms of RF operation bandwidth, high-efficiency power range, and load mismatch compensation. After years of development, load-modulated PAs (LMPAs) can maintain high efficiency over a wide [...] Read more.
With the diversification, acceleration, and arraying of wireless communication systems, power amplifiers (PAs) face stricter demands in terms of RF operation bandwidth, high-efficiency power range, and load mismatch compensation. After years of development, load-modulated PAs (LMPAs) can maintain high efficiency over a wide bandwidth and a larger output back-off (OBO) range. However, there is obvious performance degradation when the load impedance of the current LMPAs is mismatched. To ensure the perfect application of power amplifiers in wireless communication systems, load mismatch compensation methods should be developed for LMPAs. Therefore, this paper gives a comprehensive review on the load mismatch compensation techniques of LMPAs, including the Doherty power amplifier and load-modulated balanced amplifier. Full article
(This article belongs to the Special Issue Renewable Energy Management System and Power Electronic Converters)
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16 pages, 11620 KiB  
Article
Radio Frequency (RF) Power Amplifier Design Providing High Power Efficiency in a Wide Dynamic Range
by Egemen Mehter and Murat Üçüncü
Electronics 2025, 14(7), 1435; https://doi.org/10.3390/electronics14071435 - 2 Apr 2025
Cited by 1 | Viewed by 803
Abstract
Recent advances in wireless communications have favored increasing data rates. For this purpose, complex modulation techniques with high peak-to-average power ratios (PARs) have been introduced. Conventional RF power amplifiers (PAs) provide high efficiency only at saturated power levels. At lower power levels, the [...] Read more.
Recent advances in wireless communications have favored increasing data rates. For this purpose, complex modulation techniques with high peak-to-average power ratios (PARs) have been introduced. Conventional RF power amplifiers (PAs) provide high efficiency only at saturated power levels. At lower power levels, the efficiency decreases significantly. In modulation techniques with high PAR, it is necessary to increase the efficiency at the back-off power levels. Various techniques have been developed for this purpose. Among these techniques, the load-modulated balanced amplifier (LMBA) has come to the fore in recent years. In this article, a power amplifier with 47 dBm (50 W) output power in the frequency range of 1.7 GHz–1.9 GHz, 60.1–63.3% drain efficiency at maximum output power, and 40.5–46.8% drain efficiency at 6 dB output back-off is designed and manufactured by using the LMBA technique. It is also shown that the efficiency of the system increases both at maximum output power and at 6 dB output back-off when using the LMBA technique. In addition, using the PA designed with the LMBA technique having 50 W minimum power, providing drain efficiency of 60% over the entire operating band at maximum power and drain efficiency of 40% or more at 6 dB output back-off, it is seen that better results are obtained compared to similar studies in the literature. Full article
(This article belongs to the Section Microwave and Wireless Communications)
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11 pages, 6783 KiB  
Article
23.5–27.5 GHz Band Doherty Power Amplifier Integrated Circuit Using 28 nm Bulk CMOS Process Based on Dynamic Power Dividing Network
by Young Chan Choi, Soohyun Bin, Keum Cheol Hwang, Kang-Yoon Lee and Youngoo Yang
Electronics 2024, 13(21), 4190; https://doi.org/10.3390/electronics13214190 - 25 Oct 2024
Viewed by 1239
Abstract
This paper presents a Doherty power amplifier (DPA) integrated circuit (IC) designed to have enhanced gain, efficiency, and AM-AM characteristics through a dynamic power dividing technique, which can control the power dividing ratio according to the input power. Since this multi-purpose dynamic power [...] Read more.
This paper presents a Doherty power amplifier (DPA) integrated circuit (IC) designed to have enhanced gain, efficiency, and AM-AM characteristics through a dynamic power dividing technique, which can control the power dividing ratio according to the input power. Since this multi-purpose dynamic power dividing network also provides the phase offset and impedance matching at the interstage network needed for appropriate DPA operation, the active IC area could be reduced. To verify the proposed technique and its analysis, the DPA was implemented with a 28 nm bulk CMOS process for the fifth-generation (5G) new radio (NR) millimeter-wave frequency band of 23.5–27.5 GHz. The measured results showed a gain of 20.3–21.9 dB, saturated output power of 14.0–15.2 dBm, power added efficiency (PAE) of 22.8–26.7% at the peak power, and PAE of 14.6–17.6% at the 6 dB output power back-off (OBO). Full article
(This article belongs to the Section Circuit and Signal Processing)
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14 pages, 6459 KiB  
Article
Design and Experimental Validation of a High-Efficiency Sequential Load Modulated Balanced Amplifier
by Dongxian Jin, Mariangela Latino, Giovanni Crupi and Jialin Cai
Electronics 2024, 13(19), 3897; https://doi.org/10.3390/electronics13193897 - 2 Oct 2024
Cited by 1 | Viewed by 1331
Abstract
The purpose of this paper is to present a detailed design procedure for a highly efficient sequential load-modulated balanced amplifier (SLMBA) to provide an in-depth analysis of this complex power amplifier (PA) architecture. SLMBA’s basic theory is presented and discussed. An SLMBA with [...] Read more.
The purpose of this paper is to present a detailed design procedure for a highly efficient sequential load-modulated balanced amplifier (SLMBA) to provide an in-depth analysis of this complex power amplifier (PA) architecture. SLMBA’s basic theory is presented and discussed. An SLMBA with a frequency range from 2.45 GHz to 2.65 GHz was implemented and then measured in order to validate the proposed design methodology. In both saturation and back-off states, the fabricated SLMBA exhibits extremely high efficiency and output power. It delivers a maximum output power of 43~44.4 dBm and a drain efficiency (DE) of 71.6~75% at saturation, a DE of 63.5~66% at 6 dB output back-off (OBO) state, a DE of 61.8~66% at 10 dB OBO state, and a DE of more than 51% at 12 dB OBO state in the targeted frequency band. The achieved results demonstrate the effectiveness of the proposed design procedure. Full article
(This article belongs to the Section Microwave and Wireless Communications)
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16 pages, 3903 KiB  
Article
A Broadband Three-Way Series Doherty Power Amplifier with Deep Power Back-Off Efficiency Enhancement for 5G Application
by Xianfeng Que, Jun Li and Yanjie Wang
Electronics 2024, 13(10), 1882; https://doi.org/10.3390/electronics13101882 - 11 May 2024
Cited by 4 | Viewed by 2187
Abstract
This article presents a new broadband three-way series Doherty power amplifier (DPA) topology, which enables a broadband output power back-off (OBO) efficiency enhancement of up to 10 dB or higher. The proposed DPA topology achieves Doherty load modulation and three-way power combining through [...] Read more.
This article presents a new broadband three-way series Doherty power amplifier (DPA) topology, which enables a broadband output power back-off (OBO) efficiency enhancement of up to 10 dB or higher. The proposed DPA topology achieves Doherty load modulation and three-way power combining through a transformer, which requires only a low coupling factor, thus facilitating its implementation in double-sided PCBs or monolithic microwave integrated circuit (MMIC) processes. The design equations for the proposed DPA topology are proposed and analyzed in detail. A proof-of-concept PA at the 2.1–2.8 GHz band using commercial GaN transistors was designed and fabricated to validate the proposed concept. Within the operating frequency band, it achieves a saturated output power (Psat) of 44.5–46.5 dBm with a peak drain efficiency (DE) of 60–72%, and 43–52% DE at 10 dB OBO. Moreover, under a 20 MHz long-term evolution (LTE)-modulated signal, the PA demonstrates a 36.8–37.5 dBm average output power (Pavg) and 47–53% average drain efficiency (DEavg). Notably, the adjacent channel leakage ratio (ACLR) is as low as −35–−28.2 dBc without any digital predistortion (DPD). Full article
(This article belongs to the Special Issue Advanced Wireless Technologies for Next-G Networks: Antennas, Circuits, and Systems)
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14 pages, 766 KiB  
Article
Development Review of Highly Efficient Sequential Power Amplifier with Extended Back-Off Range for Broadband Application
by Keyuan Yang, Rongxing Yang, Pan Zhang, Wei Shi, Chunyu Hu and Weimin Shi
Energies 2024, 17(1), 161; https://doi.org/10.3390/en17010161 - 28 Dec 2023
Cited by 2 | Viewed by 1628
Abstract
Similar to a Doherty power amplifier (DPA), a sequential power amplifier (SPA) is mainly composed of a main amplifier, an auxiliary amplifier and a combiner. However, SPA breaks the bandwidth limitation of the impedance inverter in the DPA, and also simplifies the design [...] Read more.
Similar to a Doherty power amplifier (DPA), a sequential power amplifier (SPA) is mainly composed of a main amplifier, an auxiliary amplifier and a combiner. However, SPA breaks the bandwidth limitation of the impedance inverter in the DPA, and also simplifies the design procedure. Since the main amplifier has no load modulation, it is easy for the SPA to realize broadband operation and improve the output back-off (OBO) power range. Therefore, SPA has great advantages and potential in expanding bandwidth, improving drain efficiency and expanding the back-off range of a power amplifier simultaneously. This paper describes the evolution and classification of the SPA. First, the basic theory of the SPA is reviewed. Then, some two-way SPAs using coupler and circulator as a power combiner are discussed. Thirdly, the latest popular sequential load modulated balanced amplifier is overviewed. Full article
(This article belongs to the Section F3: Power Electronics)
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14 pages, 7295 KiB  
Article
Design of Efficient Concurrent Dual-Frequency Doherty Power Amplifier Based on Step Impedance Low-Pass Filter
by Guojin Li, Wenyuan Xu, Jingchang Nan and Mingming Gao
Electronics 2023, 12(19), 4092; https://doi.org/10.3390/electronics12194092 - 29 Sep 2023
Cited by 2 | Viewed by 1688
Abstract
In view of the peak-to-average power ratio (PAPR) of wireless communication base stations, a Doherty power amplifier with high efficiency maintained at output power back-off (OBO) can effectively solve the problem of low efficiency of the traditional power amplifier at the point of [...] Read more.
In view of the peak-to-average power ratio (PAPR) of wireless communication base stations, a Doherty power amplifier with high efficiency maintained at output power back-off (OBO) can effectively solve the problem of low efficiency of the traditional power amplifier at the point of power back-off. In this paper, we propose a method to implement a dual-frequency Doherty power amplifier (DPA) using a step-impedance low-pass filter to improve the bandwidth and efficiency of the DPA at output power back-off (OBO). Step impedance low-pass filters are used to solve the bandwidth limitations in traditional impedance converters and improve the efficiency of Doherty power amplifiers to a certain extent. In order to verify the proposed scheme, an efficient concurrent dual-band Doherty power amplifier operating at 2.0/3.5 GHz is designed and fabricated for the first range 1 (FR1) of 5G applications. In the measured results, the concurrent dual-band DPA achieves a saturated output power of 44 dBm and drain efficiency of 62% with a 6 dB back-off efficiency of 53% at 2.0 GHz and a saturated output power of 43.5 dBm and drain efficiency of 68% with a 6 dB back-off efficiency of 58% at 3.5 GHz. Full article
(This article belongs to the Special Issue Recent Advances in Microwave and Terahertz Engineering)
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20 pages, 2933 KiB  
Article
A Comparative Analysis of Doherty and Outphasing MMIC GaN Power Amplifiers for 5G Applications
by Victoria Díez-Acereda, Sunil Lalchand Khemchandani, Javier del Pino and Ayoze Diaz-Carballo
Micromachines 2023, 14(6), 1205; https://doi.org/10.3390/mi14061205 - 7 Jun 2023
Cited by 4 | Viewed by 2841
Abstract
A comparison between a fully integrated Doherty power amplifier (DPA) and outphasing power amplifier (OPA) for fifth Generation (5G) wireless communications is presented in this paper. Both amplifiers are integrated using pHEMT transistors from the OMMIC’s 100 nm GaN-on-Si technology (D01GH). After a [...] Read more.
A comparison between a fully integrated Doherty power amplifier (DPA) and outphasing power amplifier (OPA) for fifth Generation (5G) wireless communications is presented in this paper. Both amplifiers are integrated using pHEMT transistors from the OMMIC’s 100 nm GaN-on-Si technology (D01GH). After a theoretical analysis, the design and layout of both circuits are presented. The DPA uses an asymmetric configuration where the main amplifier is biased in class AB and the auxiliary amplifier is biased in class C, while the OPA uses two amplifiers biased in class B. In the comparative analysis, it has been observed that the OPA presents a better performance in terms of maximum power added efficiency (PAE), while the DPA provides higher linearity and efficiency at 7.5 dB output back-off (OBO). At a 1 dB compression point, the OPA exhibits an output power of 33 dBm with a maximum PAE of 58.3% compared to 44.2% for the DPA for an output power of 35 dBm, and at 7.5 dB OBO, the DPA achieves a PAE of 38.5%, while the OPA achieves 26.1%. The area has been optimized using absorbing adjacent component techniques, resulting in an area of 3.26 mm2 for the DPA and 3.18 mm2 for the OPA. Full article
(This article belongs to the Special Issue Power Semiconductor Devices and Applications)
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