Search Results (9)

Vanadium dioxide (VO₂) is a well-known phase-change material that exhibits a thermally driven insulator-to-metal transition (IMT) near 68 °C, leading to significant changes in its electrical and optical properties. This transition is governed by structural modifications in the VO₂ crystal lattice, enabling dynamic control over absorption, reflection, and transmission. Despite its promising tunability, VO₂-based optical absorbers face challenges such as a narrow IMT temperature window, intrinsic optical losses, and fabrication complexities associated with multilayer designs. In this work, we propose and numerically investigate a single-layer VO₂-based optical absorber for the visible spectrum using full-wave electromagnetic simulations. The proposed absorber achieves nearly 95% absorption at 25 °C (insulating phase), which drops below 5% at 80 °C (metallic phase), demonstrating exceptional optical tunability. This behavior is attributed to VO₂’s high refractive index in the insulating state, which enhances resonant light trapping. Unlike conventional multilayer absorbers, our single-layer VO₂ design eliminates structural complexity, simplifying fabrication and reducing material costs. These findings highlight the potential of VO₂-based crystalline materials for tunable and energy-efficient optical absorption, making them suitable for adaptive optics, smart windows, and optical switching applications. The numerical results presented in this study contribute to the ongoing development of crystal-based phase-transition materials for next-generation reconfigurable photonic and optoelectronic devices. Full article

This article investigates resistive random access memory (ReRAM) crossbar memory arrays, which is a notable development in non-volatile memory technology. We highlight ReRAM’s competitive edge over NAND, NOR Flash, and phase-change memory (PCM), particularly in terms of endurance, speed, and energy efficiency. This paper focuses on the architecture of crossbar arrays, where memristive devices are positioned at intersecting metal wires. We emphasize the unique resistive switching mechanisms of memristors and the challenges of sneak path currents and delve into the roles and configurations of selectors, particularly focusing on the one-selector one-resistor (1S1R) architecture with an insulator–metal transition (IMT) based selector. We use SPICE simulations based on defined models to examine a 3 × 3 1S1R ReRAM array with vanadium dioxide selectors and titanium dioxide film memristors, assessing the impact of ambient temperature and critical IMT temperatures on array performance. We highlight the operational regions of low resistive state (LRS) and high resistive state (HRS), providing insights into the electrical behavior of these components under various conditions. Lastly, we demonstrate the impact of selector presence on sneak path currents. This research contributes to the overall understanding of ReRAM crossbar arrays integrated with IMT material-based selectors. Full article

Reversible insulator–metal transition (IMT) and structure phase change in vanadium dioxide (VO₂) remain vital and challenging with complex polymorphs. It is always essential to understand the polymorphs that coexist in desired VO₂ materials and their IMT behaviors. Different electrical properties and lattice alignments in VO₂ (M) and VO₂ (B) phases have enabled the creation of versatile functional devices. Here, we present polymorphous VO₂ thin films with coexistent VO₂ (M) and VO₂ (B) phases and phase-dependent IMT behaviors. The presence of VO₂ (B) phases may induce lattice distortions in VO₂ (M). The plane spacing of (011)_M in the VO₂ (M) phase becomes widened, and the V-V and V-O vibrations shift when more VO₂ (B) phase exists in the VO₂ (M) matrix. Significantly, the coexisting VO₂ (B) phases promote the IMT temperature of the polymorphous VO₂ thin films. We expect that such coexistent polymorphs and IMT variations would help us to understand the microstructures and IMT in the desired VO₂ materials and contribute to advanced electronic transistors and optoelectronic devices. Full article

Vanadium dioxide (VO₂) with an insulator-to-metal (IMT) transition (∼68 °C) is considered a very attractive thermochromic material for smart window applications. Indeed, tailoring and understanding the thermochromic and surface properties at lower temperatures can enable room-temperature applications. The effect of W doping on the thermochromic, surface, and nanostructure properties of VO₂ thin film was investigated in the present proof. W-doped VO₂ thin films with different W contents were deposited by pulsed laser deposition (PLD) using V/W (+O₂) and V₂O₅/W multilayers. Rapid thermal annealing at 400–450 °C under oxygen flow was performed to crystallize the as-deposited films. The thermochromic, surface chemistry, structural, and morphological properties of the thin films obtained were investigated. The results showed that the V⁵⁺ was more surface sensitive and W distribution was homogeneous in all samples. Moreover, the V₂O₅ acted as a W diffusion barrier during the annealing stage, whereas the V+O₂ environment favored W surface diffusion. The phase transition temperature gradually decreased with increasing W content with a high efficiency of −26 °C per at. % W. For the highest doping concentration of 1.7 at. %, VO₂ showed room-temperature transition (26 °C) with high luminous transmittance (62%), indicating great potential for optical applications. Full article

Vanadium oxide (VO₂), as one of the classical strongly correlated oxides with a reversible and sharp insulator-metal transition (IMT), enables many applications in dynamic terahertz (THz) wave control. Recently, due to the inherent phase transition hysteresis feature, VO₂ has shown favorable application prospects in memory-related devices once combined with metamaterials or metasurfaces. However, to date, VO₂-based memory meta-devices are usually in a single-channel read/write mode, which limits their storage capacity and speed. In this paper, we propose a reconfigurable meta-memory based on VO₂, which favors a two-channel read/write mode. Our design consists of a pair of large and small split-ring resonators, and the corresponding VO₂ patterns are embedded in the gap locations. By controlling the external power supply, the two operation bands can be controlled independently to achieve at least four amplitude states, including “00”, “01”, “10”, and “11”, which results in a two-channel storage function. In addition, our research may provide prospective applications in fields such as THz switching, photon storage, and THz communication systems in the future. Full article

The reversible and multi-stimuli responsive insulator-metal transition of VO₂, which enables dynamic modulation over the terahertz (THz) regime, has attracted plenty of attention for its potential applications in versatile active THz devices. Moreover, the investigation into the growth mechanism of VO₂ films has led to improved film processing, more capable modulation and enhanced device compatibility into diverse THz applications. THz devices with VO₂ as the key components exhibit remarkable response to external stimuli, which is not only applicable in THz modulators but also in rewritable optical memories by virtue of the intrinsic hysteresis behaviour of VO₂. Depending on the predesigned device structure, the insulator-metal transition (IMT) of VO₂ component can be controlled through thermal, electrical or optical methods. Recent research has paid special attention to the ultrafast modulation phenomenon observed in the photoinduced IMT, enabled by an intense femtosecond laser (fs laser) which supports “quasi-simultaneous” IMT within 1 ps. This progress report reviews the current state of the field, focusing on the material nature that gives rise to the modulation-allowed IMT for THz applications. An overview is presented of numerous IMT stimuli approaches with special emphasis on the underlying physical mechanisms. Subsequently, active manipulation of THz waves through pure VO₂ film and VO₂ hybrid metamaterials is surveyed, highlighting that VO₂ can provide active modulation for a wide variety of applications. Finally, the common characteristics and future development directions of VO₂-based tuneable THz devices are discussed. Full article

Functional oxides with strongly correlated electron systems, such as vanadium dioxide, manganite, and so on, show a metal-insulator transition and an insulator-metal transition (MIT and IMT) with a change in conductivity of several orders of magnitude. Since the discovery of phase separation during transition processes, many researchers have been trying to capture a nanoscale electronic domain and investigate its exotic properties. To understand the exotic properties of the nanoscale electronic domain, we studied the MIT and IMT properties for the VO₂ electronic domains confined into a 20 nm length scale. The confined domains in VO₂ exhibited an intrinsic first-order MIT and IMT with an unusually steep single-step change in the temperature dependent resistivity (R-T) curve. The investigation of the temperature-sweep-rate dependent MIT and IMT properties revealed the statistical transition behavior among the domains. These results are the first demonstration approaching the transition dynamics: the competition between the phase-transition kinetics and experimental temperature-sweep-rate in a nano scale. We proposed a statistical transition model to describe the correlation between the domain behavior and the observable R-T curve, which connect the progression of the MIT and IMT from the macroscopic to microscopic viewpoints. Full article

The possibility of controlling the insulator-to-metal transition (IMT) in nano-particle VO₂ (NP-VO₂) using the electric field effect in a metal-oxide-VO₂ field-effect transistor (MOVFET) at room temperature was investigated for the first time. The IMT induced by current in NP-VO₂ is a function of nano-particle size and was studied first using the conducting atomic force microscope (cAFM) current-voltage (I-V) measurements. NP-VO₂ switching threshold voltage (V_T), leakage current (I_leakage), and the sub-threshold slope of their conductivity (S_c) were all determined. The cAFM data had a large scatter. However, V_T increased as a function of particle height (h) approximately as V_T(V) = 0.034 h, while I_leakage decreased as a function of h approximately as I_leakage (A) = 3.4 × 10⁻⁸e^−h/9.1. Thus, an asymptotic leakage current of 34 nA at zero particle size and a tunneling (carrier) decay constant of ~9.1 nm were determined. S_c increased as a function of h approximately as S_c (mV/decade) = 2.1 × 10⁻³e^h/6 and was around 0.6 mV/decade at h~34 nm. MOVFETs composed of Pt drain, source and gate electrodes, HfO₂ gate oxide, and NP-VO₂ channels were then fabricated and showed gate voltage dependent drain-source switching voltage and current (I_DS). The subthreshold slope (S_t) of drain-source current (I_DS) varied from 42 mV/decade at V_G = −5 V to 54 mV/decade at V_G = +5 V. Full article

VO₂ is the prototype material for insulator–metal transition (IMT). Its transition at T_IMT = 340 K is fast and consists of a large resistance jump (up to approximately five orders of magnitude), a large change in its optical properties in the visible range, and symmetry change from monoclinic to tetragonal (expansion by 1% along the tetragonal c-axis and 0.5% contraction in the perpendicular direction). It is a candidate for potential applications such as smart windows, fast optoelectronic switches, and field-effect transistors. The change in optical properties at the IMT allows distinguishing between the insulating and the metallic phases in the mixed state. Static or dynamic domain patterns in the mixed-state of self-heated single crystals during electric-field induced switching are in strong contrast with the percolative nature of the mixed state in switching VO₂ films. The most impressive effect—so far unique to VO₂—is the sliding of narrow semiconducting domains within a metallic background in the positive sense of the electric current. Here we show images from videos obtained using optical microscopy for sliding domains along VO₂ needles and confirm a relation suggested in the past for their velocity. We also show images for the disturbing damage induced by the structural changes in switching VO₂ crystals obtained for only a few current–voltage cycles. Full article