Search Results (610)

We propose a simulation-based design for a flexible color filter (FCF) using a lithium niobate metamaterial (LNM) to investigate its color filtering potential. The FCF is composed of three periodically arranged half-ellipse LN arrays on a polydimethylsiloxane (PDMS) substrate, denoted as LNM-1, LNM-2, and LNM-3. The electromagnetic responses of the FCF can be controlled by adjusting the periods of the LNMs. Our simulations predict high-quality (Q) factors in transmission spectra, ranging from 100 to 200 for LNM-1, 290 to 360 for LNM-2, and 140 to 300 for LNM-3. When the FCF is exposed to the surrounding environments with different refractive indexes, it exhibits a theoretical figure of merit (FOM) up to 900 RIU⁻¹ and a sensitivity reaching 130 nm/RIU. The electromagnetic field distributions reveal strong confinement within the LNM nanostructures, confirming an efficient light–matter interaction. These results indicate that the proposed LNM-based FCF presents a promising design concept for high-performance color sensing and filtering applications. Full article

Based on the theory of optical sensing, we propose a high-precision plasmonic refractive index nanosensor, which consists of a symmetric rectangular waveguide and a circular ring containing a rectangular cavity. The designed novel tunable micro-resonant circular cavity filter based on surface plasmon excitations is able to confine light to sub-wavelength dimensions. The data show that different geometrical factors have different effects on sensing, with the geometry of the rectangular cavity and the radius of the circular ring being the key factors affecting the Fano resonance. Furthermore, the resonance bifurcation enables the structure to achieve a tunable dual Fano resonance system. The structure was tuned to obtain optimal sensitivity (S) and figure of merit values up to 3066 nm/RIU and 78. The designed structure has excellent sensing performance with sensitivities of 0.4767 nm·(mg/d${\mathrm{L}}^{-1}$) and 0.6 nm·(mg/d${\mathrm{L}}^{-1}$) in detecting Na⁺ and K⁺ concentrations in the electrolyte solution, respectively, and can be easily achieved by the spectrometer. The wavelength accuracy of 0.001 nm can be easily achieved by a spectrum analyzer, which has a broad application prospect in the field of optical integration. Full article

With their superior switching speed, GaN high-electron-mobility transistors (HEMTs) enable high power density, reduce energy losses, and increase power efficiency in a wide range of applications, such as power electronics, due to their high breakdown voltage. GaN-HEMT devices are subject to long-term reliability due to the self-heating effect and lattice mismatch between the SiC substrate and the GaN. Depletion-mode GaN HEMTs are utilized for radio frequency applications, and this work investigates three wide-bandgap (WBG) GaN HEMT fixed-frequency oscillators with output buffers. The first GaN-on-SiC HEMT oscillator consists of an HEMT amplifier with an LC feedback network. With the supply voltage of 0.8 V, the single-ended GaN oscillator can generate a signal at 8.85 GHz, and it also supplies output power of 2.4 dBm with a buffer supply of 3.0 V. At 1 MHz frequency offset from the carrier, the phase noise is −124.8 dBc/Hz, and the figure of merit (FOM) of the oscillator is −199.8 dBc/Hz. After the previous study, the hot-carrier stressed RF performance of the GaN oscillator is studied, and the oscillator was subject to a drain supply of 8 V for a stressing step time equal to 30 min and measured at the supply voltage of 0.8 V after the step operation for performance benchmark. Stress study indicates the power oscillator with buffer is a good structure for a reliable structure by operating the oscillator core at low supply and the buffer at high supply. The second balanced oscillator can generate a differential signal. The feedback filter consists of a left-handed transmission-line LC network by cascading three unit cells. At a 1 MHz frequency offset from the carrier of 3.818 GHz, the phase noise is −131.73 dBc/Hz, and the FOM of the 2nd oscillator is −188.4 dBc/Hz. High supply voltage operation shows phase noise degradation. The third GaN cross-coupled VCO uses 8-shaped inductors. The VCO uses a pair of drain inductors to improve the Q-factor of the LC tank, and it uses 8-shaped inductors for magnetic coupling noise suppression. At the VCO-core supply of 1.3 V and high buffer supply, the FOM at 6.397 GHz is −190.09 dBc/Hz. This work enhances the design techniques for reliable GaN HEMT oscillators and knowledge to design high-performance circuits. Full article

Conventional detectors based on ionization chambers, semiconductors, or thermoluminescent materials generally cannot be used to verify the in vivo dose delivered during brachytherapy treatments with γ-ray sources. However, certain adaptations and alternative methods, such as the use of miniaturized detectors or other specialized techniques, have been explored to address this limitation. One approach to solving this problem involves the use of dosimetric materials based on efficient scintillation crystals, which can be placed in the patient’s body using a long optical fiber inserted intra-cavernously, either in front of or next to the tumor. Scintillation crystals with a density close to that of tissue can be used in any location, including the respiratory tract, as they do not interfere with dose distribution. However, in many cases of radiation therapy, the detector may need to be positioned behind the target. In such cases, the use of heavy, high-density, and high-Z_eff scintillators is strongly preferred. The delivered radiation dose was registered using the radioluminescence response of the crystal scintillator and recorded with a compact luminescence spectrometer connected to the scintillator via a long optical fiber (so-called fiber-optic dosimeter). This proposed measurement method is completely non-invasive, safe, and can be performed in real time. To complete the abovementioned task, scintillation detectors based on YAG:Ce (ρ = 4.5 g/cm³; Z_eff = 35), LuAG:Ce (ρ = 6.75 g/cm³; Z_eff = 63), and GAGG:Ce (ρ = 6.63 g/cm³; Z_eff = 54.4) garnet crystals, with different densities ρ and effective atomic numbers Z_eff, were used in this work. The results obtained are very promising. We observed a strong linear correlation between the dose and the scintillation signal recorded by the detector system based on these garnet crystals. The measurements were performed on a specially prepared phantom in the brachytherapy treatment room at the Oncology Center in Bydgoszcz, where in situ measurements of the applied dose in the 0.5–8 Gy range were performed, generated by the ¹⁹²Ir (394 keV) γ-ray source from the standard Fexitron Elektra treatment system. Finally, we found that GAGG:Ce crystal detectors demonstrated the best figure-of-merit performance among all the garnet scintillators studied. Full article

The flexible transparent conductive films (TCFs) of a ZnS/Cu/Ag/TiO₂ multilayered structure were deposited on a flexible PET substrate with high surface roughness using magnetic sputtering, and the effects of structural characteristics on the performance of the films were analyzed. The TCFs with TiO₂/Cu/Ag/TiO₂ and ZnS/Cu/Ag/ZnS symmetric structures were also prepared for comparison. The TCF samples were deposited using ZnS, TiO₂, Cu and Ag targets, and they were analyzed using scanning electronic microscopy, atomic force microscopy, grazing incidence X-ray diffraction, spectrophotometry and a four-probe tester. The TCFs exhibit generally uniform surface morphology, excellent light transmittance and electrical conductivity with optimized structure. The optimal values are 84.40%, 5.52 Ω/sq and 33.19 × 10⁻³ Ω⁻¹ for the transmittance, sheet resistance and figure of merit, respectively, in the visible spectrum. The satisfactory properties of the asymmetric multilayered TCF deposited on a rough-surface substrate should be mainly attributed to the optimized structure parameters and reasonable interfacial compatibilities. Full article

This paper reports on the high performance of a thick-waveguide guided mode resonance (GMR) sensor. Theoretical calculations revealed that when light incidents on the grating and excites the negative first-order diffraction order, by increasing the waveguide thickness, both a high sensitivity and high figure of merit (FOM) can be obtained. Experimentally, we achieved a sensitivity of 1255.78 nm/RIU, a resonance linewidth of 0.59 nm at the resonance wavelength of 535 nm, an FOM as high as 2128 RIU⁻¹, and a detection limit as low as 1.74 × 10⁻⁷ RIU. To our knowledge, this performance represents the highest comprehensive level for current GMR sensors. Additionally, the use of a microfluidic hemisphere and polymer materials effectively reduces the liquid consumption under oblique incidence and the fabrication cost in practical application. Overall, the proposed GMR sensor exhibits great potential in label-free biosensing. Full article

Quantum Dots (QDs) are small semiconductor nanoparticles (<10 nm) with strong, relatively stable, and tunable luminescent properties, which are increasingly applied in the sensing and detection of various analytes, including metal ions, biomarkers, explosives, proteins, RNA/DNA fragments, pesticides, drugs, and pollutants. In this review, we critically assess recent developments and advancements in luminescent QD-based sensors from an analytical perspective. We collected, tabulated, and analyzed relevant data reported in 124 peer-reviewed articles. The key analytical figures of merit, including the limit of detection (LOD), excitation and emission wavelengths, and size of the particles were extracted, tabulated, and analyzed with graphical representations. We calculated the geometric mean and median LODs from those tabulated publications. We found the following geometric mean LODs: 38 nM for QD-fluorescent-based sensors, 26 nM for QD-phosphorescent-based sensors, and an impressively low 0.109 pM for QD-chemiluminescent-based sensors, which demonstrate by far the best sensitivity in QD-based detection. Moreover, AI-based sensing methods, including the ATTBeadNet model, optimized principal component analysis(OPCA) model, and Support Vector Machine (SVM)-based system, were reviewed as they enhance the analytical performance of the detection. Despite these advances, there are still challenges that include improvements in recovery values, biocompatibility, stability, and overall performance. This review highlights trends to guide the future design of robust, high-performance, QD-based luminescent sensors. Full article

Previous investigations devoted to non-spherical nanoparticles for biosensing have primarily addressed two hot topics, namely, finding nanoparticles with the best shape for refractive index sensing properties and the optimization of size parameters. In this study, based on these hot topics, Au-Ag alloy nanoparticles with excellent optical properties were selected as the research object. Targeting rotationally symmetric Au-Ag alloy nanoparticles for biosensing applications, the complex media function correction model and T-matrix approach were used to systematically analyze the variation patterns of extinction properties, refractive index sensitivity, full width at half maximum, and figure of merit of three rotationally symmetric Au-Ag alloy nanoparticles with respect to the size of the particles and the Au molar fraction. In addition, we optimized the figure of merit to obtain the best size parameters and Au molar fractions for the three rotationally symmetric Au-Ag alloy nanoparticles. Finally, the range of dimensional parameters corresponding to a figure of merit greater than 98% of its maximum value was calculated. The results show that the optimized Au-Ag alloy nanorods exhibit a refractive index sensitivity of 395.2 nm/RIU, a figure of merit of 7.16, and a wide range of size parameters. Therefore, the optimized Au-Ag alloy nanorods can be used as high-performance biosensors. Furthermore, this study provides theoretical guidance for the application and preparation of rotationally symmetric Au-Ag alloy nanoparticles in biosensing. Full article

The nanostructural features of a mechanically alloyed Sb-doped (Ti_0.4Zr_0.6)_0.7Hf_0.3NiSn thermoelectric (TE) Half-Heusler (HH) compound were addressed using Transmission Electron Microscopy (TEM) coupled with Energy Dispersive Spectroscopy measurements and Extended X-ray Absorption Fine Structure (EXAFS) spectroscopy. The EXAFS measurements at the Ni-K, Sn-K, Zr-K, and Hf-L₃-edge were implemented in an effort to reveal the influence of Hf and Zr incorporation into the crystal with respect to their previously measured TE properties. The substitution of Ti by Hf and Zr is expected to yield local lattice distortions due to the different atomic sizes of the dopants or/and electronic charge redistribution amongst the cations. However, the material is characterised by a high degree of crystallinity in both the short and long-range order, on average, and the nominal stoichiometry is identified as (Zr_0.42Hf_0.30Ti_0.28)NiSn_0.98Sb_0.02. The synergistic effect of minimization of extended structural defects or lattice distortions and considerable alloying-induced point defect population contributes to the improved TE properties and leads to the previously reported enhancement of the figure of merit of the mixed HHs. Full article

The rapid advancement of electronic technology demands circuit designs that minimize power consumption while maximizing performance. The power supply rejection ratio (PSRR) is a critical metric for quantifying an amplifier’s ability to suppress supply noise, yet accurately predicting PSRR in high-frequency domains and complex multi-stage architectures is increasingly challenging. In this work, we introduce a new framework for PSRR prediction that overcomes these limitations. Leveraging a simplified circuit abstraction based on Thevenin’s theorem, we reduced multi-stage operational amplifiers to “black-box” models—collapsing intricate small-signal networks into a tractable form without sacrificing accuracy. Building on this foundation, we proposed the Power-Supply Rejection Gain-Bandwidth (PGB) metric, which concisely captures the trade-off between an amplifier’s DC PSRR and the frequency range over which that rejection is effective. Using PGB, designers gain an intuitive figure-of-merit for early-stage optimization of PSRR. We validated the efficacy of the combined black-box modeling and PGB approach through detailed case studies, including a 180 nm CMOS two-stage op-amp design. These findings confirmed that the proposed black box plus PGB framework can reliably guide the design of analog circuits with stringent PSRR requirements. Full article

High efficiency and high power density are key targets in modern power conversion. Operating power converters at high switching frequencies enables the use of smaller passive components, which, in turn, facilitate achieving high power density. However, the concurrent increase in switching frequency and power density leads to efficiency and overheating issues. Soft switching techniques are typically employed to minimize switching losses and significantly improve efficiency by reducing power losses. However, the hysteresis behavior of the power electronics devices’ output capacitance, C_OSS, is the cause of regrettable losses in Super-Junction (SJ) MOSFETs, SiC MOSFETs, and GaN HEMTs, which are usually adopted in soft switching-based conversion schemes. This paper reviews the techniques for measuring hysteresis traces and power losses, as well as the understanding of the phenomenon to identify current research trends and open problems. A few studies have reported that GaN HEMTs tend to exhibit the lowest hysteresis losses, while Si superjunction (SJ) MOSFETs often show the highest. However, this conclusion cannot be generalized by comparing the results from different works because they are typically made across devices with different (when the information is reported) breakdown voltages, on-state resistances, die sizes, and test conditions. Moreover, some recent investigations using advanced TCAD simulations have demonstrated that newer Si-SJ MOSFETs employing trench-filling epitaxial growth can achieve significantly reduced hysteresis losses. Similarly, while multiple studies confirm that hysteresis losses increase with increasing dv/dt and decreasing temperature, the extent of this dependence varies significantly with device structure and test methodology. This difficulty in obtaining a general conclusion is due to the lack of proper figures of merit that account for hysteresis losses, making it problematic to evaluate the suitability of different devices in resonant converters. This problem highlights the primary current challenge, which is the development of a standard and automated method for characterizing C_OSS hysteresis. Consequently, significant research effort must be invested in addressing this main challenge and the other challenges described in this study to enable power electronics researchers and practitioners to develop resonant converters properly. Full article

This paper proposes a high-sensitivity U-shaped optical fiber sensor based on indium tin oxide (ITO) for surface plasmon resonance (SPR) sensing. Finite element simulations reveal that introducing ITO enhances the surface electric field strength by 1.15× compared to conventional designs, directly boosting sensitivity. The U-shaped structure optimizes evanescent wave–metal film interaction, further improving performance. In an external refractive index (RI) range of 1.334–1.374 RIU, the sensor achieves a sensitivity of 4333 nm/RIU (1.85× higher than traditional fiber sensors) and a figure of merit (FOM) of 21.7 RIU⁻¹ (1.68× improvement). Repeatability tests show a low relative standard deviation (RSD) of 0.4236% for RI measurements, with a maximum error of 0.00018 RIU, confirming excellent stability. The ITO coating’s strong adhesion ensures long-term reliability. With its simple structure, ease of fabrication, and superior sensitivity/FOM, this SPR sensor is well-suited for high-precision biochemical detection in intelligent sensing systems. Full article

Tunable photonic devices are increasingly pivotal in modern optical systems, enabling the dynamic control over light propagation, modulation, and filtering. This review systematically explores two prominent classes of materials, thermo-optic and electro-optic, for their roles in such tunable devices. Thermo-optic materials utilize refractive index changes induced by temperature variations, offering simple implementation and broad material compatibility, although often at the cost of slower response times. In contrast, electro-optic materials, particularly those exhibiting the Pockels and Kerr effects, enable rapid and precise refractive index modulation under electric fields, making them suitable for high-speed applications. The paper discusses the underlying physical mechanisms, material properties, and typical figures of merit for each category, alongside recent advancements in organic, polymeric, and inorganic systems. Furthermore, integrated photonic platforms and emerging hybrid material systems are highlighted for their potential to enhance performance and scalability. By evaluating the tradeoffs in speed, power consumption, and integration complexity, this review identifies key trends and future directions for deploying thermo-optic and electro-optic materials in the next generation tunable photonic devices. Full article

Chalcopyrite (CuFeS₂) has attracted interest as a thermoelectric material due to its narrow bandgap and its ability to tailor its carrier concentration through doping. In this study, we investigated the effects of Ni²⁺ substitution at Cu⁺ sites in chalcopyrite (Cu_1−xNi_xFeS₂) on its structural, microstructural, and thermoelectric properties. Samples were synthesized using mechanical alloying followed by hot pressing to ensure high-density compaction. X-ray diffraction analysis confirmed the formation of the tetragonal chalcopyrite phase without detectable secondary phases. The observed reduction in lattice parameters with increasing Ni content provided evidence of successful Ni incorporation at Cu sites within the chalcopyrite structure. Microstructural analysis and elemental mapping further supported the uniform distribution of Ni within the chalcopyrite matrix. Thermoelectric property measurements revealed that Ni-doped chalcopyrite exhibited n-type conduction. As the Ni concentration increased, the carrier concentration and electrical conductivity increased significantly, with Cu_0.92Ni_0.08FeS₂ achieving the highest electrical conductivity of 2.5 × 10⁴ Sm⁻¹ at 723 K. However, the absolute value of the Seebeck coefficient decreased with increasing Ni doping, following the expected trade-off between electrical conductivity and thermopower. The optimized composition, Cu_0.96Ni_0.04FeS₂, exhibited the highest thermoelectric performance, with a power factor of 0.50 mWm⁻¹K⁻² and a maximum dimensionless figure of merit (ZT) of 0.18 at 623 K. Compared to undoped chalcopyrite, these enhancements represent a 43% increase in power factor and a 50% improvement in ZT. Full article

The structural, optical and electrical properties of the flexible, asymmetric TiO₂/Cu/Ag/ZnS and ZnS/Cu/Ag/TiO₂ transparent conductive films (TCFs) were studied. The multilayered TCFs were magnetron sputtered onto the flexible PET substrate layer-wise, with TiO₂, ZnS, Cu and Ag targets. The atomic force microscope, scanning electronic microscope, X-ray diffractometer, ultraviolet-visible spectrophotometer and four-probe tester were utilized to characterize the samples. The photoelectric property of the multilayers varies with the adjustment in structural parameters. The ZnS/Cu/Ag/TiO₂ samples demonstrate a more uniform surface morphology and better optical and electrical properties than the TiO₂/Cu/Ag/ZnS counterparts. The optimal sheet resistance and average transmittance of the ZnS/Cu/Ag/TiO₂ films are 5.56 Ω/sq and 88.46% in the visible spectrum, with the corresponding figure of merit reaching 52.76 × 10⁻³ Ω⁻¹. The bottom ZnS layer reveals superior percolation function for the bimetallic layer, forming with good continuity and homogeneity, although the original surface roughness is higher than that of TiO₂. The top TiO₂ layer demonstrates a smooth morphology and dense structure, beneficial to the high transparency and stability of the multilayer. Full article