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The new mineral radvaniceite, GeS₂, was found on the burning coal mine dump of the abandoned Kateřina coal mine at Radvanice, near Trutnov, northern Bohemia, Czech Republic. It occurs as aggregates resembling cotton tufts up to 5 mm in size; they are composed of acicular crystals up to fibres about 1–5 μm thick and up to 3 mm in length. Individual fibres are distorted and partly resemble bent wires nucleated on rock fragments or on black, crumbly ash, in association with minerals of solid solutions of Bi-Sb and stangersite, herzenbergite, and greenockite. Radvaniceite was also observed as irregular grains in a range of 10–50 μm in size, forming part of earlier multicomponent aggregates upon which the above-described crystals grow. These aggregates are formed, in addition to radvaniceite, by minerals of Bi-Sb, Bi₂S₃-Sb₂S₃ and Bi₂S₃-Bi₂Se₃ solid solutions, Bi₃S₂, Bi-sulpho/seleno/tellurides, tellurium, unnamed PbGeS₃, Cd₄GeS₆, GeAsS, Sn₅Sb₃S₇, stangersite, greenockite, cadmoindite, herzenbergite, teallite, and Sn- and/or Se-bearing galena. Radvaniceite is formed under reducing conditions by direct crystallization from hot gasses (250–350 °C) containing Cl and F at a depth of 30–60 cm under the surface of a burning coal mine dump; the mine dump fire started spontaneously, and no anthropogenic material was deposited there. Acicular crystals up to fibres of radvaniceite are elastic to flexible; are white to yellowish grey in colour, with white streaks; are translucent in transmitted light; and have vitreous to adamantine lustre. Cleavage and fracture were not observed. The calculated density is 3.05 and 2.99 g·cm⁻³ for the empirical and ideal formulae, respectively. Radvaniceite is transparent under the microscope, with a very weak pleochroism (from colourless to pale greenish yellow), and has a refraction index > 1.8. Under reflected light, radvaniceite is light grey; bireflectance and pleochroism were not observed due to abundant, white to grey, internal reflections. Anisotropy in crossed polars is distinct with grey rotation tints. Reflectance values of radvaniceite in air (R_min–R_max, %) are: 15.4–18.8 at 470 nm, 16.1–20.4 at 546 nm, 16.4–20.8 at 589 nm, and 16.9–20.9 at 650 nm. The empirical formula, based on electron-microprobe analyses, is (Ge_0.99Bi_0.01)_Σ1.00(S_1.97Se_0.03)_Σ2.00. The ideal formula is GeS₂, which requires Ge 53.10, S 46.90, total 100 wt. %. Radvaniceite is monoclinic, Pc, a = 6.8831(12), b = 22.501(3), c = 6.8081(11) Å, β = 120.365(9)°, with V = 909.8(4) ų and Z = 12. The strongest reflections of the powder X-ray diffraction pattern [d, Å (I) (hkl)] are: 5.7395 (100) (11-1, 110), 5.2067 (16) (021), 3.3650 (33) (111, 11-2), 2.8417 (33) (022), 2.8236 (16) (170, 17-1), 2.8134 (20) (080) and 2.6257 (19) (240, 24-2). According to X-ray powder diffraction data and Raman spectroscopy, radvaniceite is a natural analogue of synthetic monoclinic low-temperature β-GeS₂ with distorted GeS₄ tetrahedra forming four corner-sharing tetrahedral chains, which are connected by corner-sharing tetrahedra in a three-dimensional structure. We named the mineral after its type locality, Radvanice, one of the past centres of coal mining in the Czech limb of the Intra-Sudetic Basin. This mineral and its name have been approved by the Commission on New Minerals, Nomenclature and Classification of the International Mineralogical Association (number 2021-052). Full article

Tin(II) sulfide (SnS) is an attractive semiconductor for solar energy conversion in thin film devices due to its bandgap of around 1.3 eV in its orthorhombic polymorph, and a band gap energy of 1.5–1.7 eV for the cubic polymorph—both of which are commensurate with efficient light harvesting, combined with a high absorption coefficient (10⁻⁴ cm⁻¹) across the NIR–visible region of the electromagnetic spectrum, leading to theoretical power conversion efficiencies >30%. The high natural abundance and a relative lack of toxicity of its constituent elements means that such devices could potentially be inexpensive, sustainable, and accessible to most nations. SnS exists in its orthorhombic form as a layer structure similar to black phosphorus; therefore, the bandgap energy can be tuned by thinning the material to nanoscale dimensions. These and other properties enable SnS applications in optoelectronic devices (photovoltaics, photodetectors), lithium- and sodium-ion batteries, and sensors among others with a significant potential for a variety of future applications. The synthetic routes, structural, optical and electronic properties as well as their applications (in particular photonic applications and energy storage) of bulk and 2D tin(II) sulfide are reviewed herein. Full article