- Article
First-Principles Study of Biaxial Strain Effects on Schottky Barrier Modulation in Graphene/ZnSe Heterostructures
- Guowang Pang,
- Xue Wen,
- Lili Zhang and
- Yineng Huang
Reducing the Schottky barrier at the metal–semiconductor interface and achieving Ohmic contact is crucial for the development of high-performance Schottky field-effect transistors. This paper investigates the stability, interface interactions,...