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Keywords = anomalous temperature-dependent photoluminescence

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8 pages, 1847 KiB  
Article
Energy-Dependent Time-Resolved Photoluminescence of Self-Catalyzed InN Nanocolumns
by Fang-I Lai, Jui-Fu Yang, Wei-Chun Chen, Dan-Hua Hsieh, Woei-Tyng Lin, Yu-Chao Hsu and Shou-Yi Kuo
Catalysts 2021, 11(6), 737; https://doi.org/10.3390/catal11060737 - 16 Jun 2021
Cited by 2 | Viewed by 2356
Abstract
In this study, we report the optical properties and carrier dynamics of different surface dimensionality n-type wurtzite InN with various carrier concentrations using photoluminescence (PL) and an energy-dependent, time-resolved photoluminescence (ED-TRPL) analysis. Experimental results indicated that the InN morphology can be controlled by [...] Read more.
In this study, we report the optical properties and carrier dynamics of different surface dimensionality n-type wurtzite InN with various carrier concentrations using photoluminescence (PL) and an energy-dependent, time-resolved photoluminescence (ED-TRPL) analysis. Experimental results indicated that the InN morphology can be controlled by the growth temperature, from one-dimensional (1D) nanorods to two-dimensional (2D) films. Moreover, donor-like nitrogen vacancy (VN) is responsible for the increase in carrier concentration due to the lowest formation energies in the n-type InN samples. The PL results also reveal that the energies of emission peaks are higher in the InN samples with 2D features than that with 1D features. These anomalous transitions are explained as the recombination of Mahan excitons and localized holes, and further proved by a theoretical model, activation energy and photon energy-dependent lifetime analysis. Full article
(This article belongs to the Special Issue Growth of Catalyst-Free InN Nanocolumns)
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9 pages, 2115 KiB  
Article
Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells
by Yuhao Ben, Feng Liang, Degang Zhao, Xiaowei Wang, Jing Yang, Zongshun Liu and Ping Chen
Nanomaterials 2021, 11(4), 1023; https://doi.org/10.3390/nano11041023 - 16 Apr 2021
Cited by 16 | Viewed by 3032
Abstract
An increase of integrated photoluminescence (PL) intensity has been observed in a GaN-based multiple quantum wells (MQWs) sample. The integrated intensity of TDPL spectra forms an anomalous variation: it decreases from 30 to 100 K, then increases abnormally from 100 to 140 K [...] Read more.
An increase of integrated photoluminescence (PL) intensity has been observed in a GaN-based multiple quantum wells (MQWs) sample. The integrated intensity of TDPL spectra forms an anomalous variation: it decreases from 30 to 100 K, then increases abnormally from 100 to 140 K and decreases again when temperature is beyond 140 K. The increased intensity is attributed to the electrons and holes whose distribution are spatial non-equilibrium distributed participated in the radiative recombination process and the quantum barrier layers are demonstrated to be the source of non-equilibrium distributed carriers. The temperature dependence of this kind of spatial non-equilibrium carriers’ dynamics is very different from that of equilibrium carriers, resulting in the increased emission efficiency which only occurs from 100 to 140 K. Moreover, the luminescence efficiency of MQWs with non-equilibrium carriers is much higher than that without non-equilibrium carriers, indicating the high luminescence efficiency of GaN-based LEDs may be caused by the non-equilibrium distributed carriers. Furthermore, a comparison analysis of MQWs sample with and without hydrogen treatment further demonstrates that the better quantum well is one of the key factors of this anomalous phenomenon. Full article
(This article belongs to the Special Issue Nanomaterials and Nanotechnology in Experimental Photonics)
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