Search Results (7)

Low-temperature oxidation of titanomagnetite in oceanic basalts distorts the primary thermoremanent magnetization (TRM) signal essential for reconstructing Earth’s magnetic field history, though the specific impact of magma intrusion-induced oxidation on paleointensity preservation remains poorly constrained. This investigation simulates such oxidation processes using a novel experimental design involving isothermal annealing (260 $°$C; 50 µT field; durations 12.5–1300 h) of Red Sea rift basalts (P72/4), employing the Thellier-Coe method to quantify how chemical remanent magnetization (CRM) overprinting affects TRM fidelity under controlled field orientations aligned either parallel or perpendicular to the initial TRM. Results demonstrate two-sloped Arai-Nagata diagrams with reliable TRM preservation below 360 $°$C but significant alteration artifacts above this threshold. Crucially, field orientation during oxidation critically influences accuracy: parallel configurations maintain fidelity (±3% deviation at $Z=0.48$), while perpendicular fields introduce systematic biases (38% overestimation at $Z=0.15$; 20% underestimation at $Z>0.48$), which is attributable to magnetostatic interactions in core-shell grain structures. These findings establish that paleointensity reliability in basalt prone to low-temperature oxidation depends fundamentally on the alignment between oxidation-era magnetic fields and primary TRM direction, necessitating stringent sample selection and directional constraints in marine paleomagnetic research to mitigate CRM-TRM interference. Full article

Metal-oxide-semiconductor (MOS)-based thin-film transistors (TFTs) are gaining significant attention in the field of flexible electronics due to their desirable electrical properties, such as high field-effect mobility (μ_FE), lower I_OFF, and excellent stability under bias stress. TFTs have widespread applications, such as printed electronics, flexible displays, smart cards, image sensors, virtual reality (VR) and augmented reality (AR), and the Internet of Things (IoT) devices. In this study, we approach using a low-temperature solution-processed hafnium zirconium oxide (HfZrOx) gate insulator (GI) to improve the performance of lanthanum zinc oxide (LaZnO) TFTs. For the optimization of HfZrO GI, HfZrO films were annealed at 200, 250, and 300 °C. The optimized HfZrO-250 °C GI-based LaZnO TFT shows the μ_FE of 19.06 cm²V⁻¹s⁻¹, threshold voltage (V_TH) of 1.98 V, hysteresis voltage (V_H) of 0 V, subthreshold swing (SS) of 256 mV/dec, and I_ON/I_OFF of ~10⁸. The flexible LaZnO TFT with HfZrO-250 °C GI exhibits negligible ΔV_TH of 0.25 V under positive-bias-temperature stress (PBTS). The flexible hysteresis-free LaZnO TFTs with HfZrO-250 °C can be widely used for flexible electronics. These enhancements were attributed to the smooth surface morphology and reduced defect density achieved with the HfZrO gate insulator. Therefore, the HfZrO/LaZnO approach holds great promise for next-generation MOS TFTs for flexible electronics. Full article

We studied the kinetics of swelling in high-χ lamellar-forming poly(styrene)-block- poly(lactic acid) (PS-b-PLA) block copolymer (BCP) by varying the heating rate and monitoring the solvent vapour pressure and the substrate temperature in situ during solvo-thermal vapour annealing (STVA) in an oven, and analysing the resulting morphology. Our results demonstrate that there is not only a solvent vapour pressure threshold (120 kPa), but also that the rate of reaching this pressure threshold has a significant effect on the microphase separation and the resulting morphologies. To study the heating rate effect, identical films were annealed in a tetrahydrofuran (THF) vapour environment under three different ramp regimes, low $(r_T<1 °\mathrm{C}/\min$), medium $\left(2<r_T<3 °\mathrm{C}/\min \right)$ and high $(r_T>4 °\mathrm{C}/\min )$, for 60, 90 and 120 min, respectively, while the solvent vapour pressure and the substrate temperature were measured in real time. The translational order improved significantly with increasing the heating rate. The solvent mass uptake calculated for the different ramp regimes during annealing is linearly proportional to time, indicating that the swelling kinetics followed Case II diffusion. Two stages of the swelling behaviour were observed: (i) diffusion at the initial stages of swelling and (ii) stress relaxation, controlled at later stages. Films with a faster rate of increase in vapour pressure $(r_P>2 \mathrm{kPa}/\min$) reached the pressure threshold value at an early stage of the swelling and attained a good phase separation. According to our results, highly ordered patterns are only obtained when the volume fraction of the solvent exceeds the polymer volume fraction, i.e., $({\phi }_s\ge {\phi }_p)$_, during the swelling process, and below this threshold value $({\phi }_s=0.5)$, the films did not obtain a good structural order, even at longer annealing times. Full article

This paper presents a theoretical study of the electronic and dynamic properties of silicon vacancies and self-interstitials in 4H–SiC using hybrid density functional methods. Several pending issues, mostly related to the thermal stability of this defect, are addressed. The silicon site vacancy and the carbon-related antisite-vacancy (CAV) pair are interpreted as a unique and bistable defect. It possesses a metastable negative-$U$ neutral state, which “disproportionates” into $V_{\mathrm{Si}}^{+}$ or $V_{\mathrm{Si}}^{-}$, depending on the location of the Fermi level. The vacancy introduces a $\left(-/+\right)$ transition, calculated at $E_{\mathrm{c}}-1.25 \mathrm{eV}$, which determines a temperature threshold for the annealing of $V_{\mathrm{Si}}$ into CAV in n-type material due to a Fermi level crossing effect. Analysis of a configuration coordinate diagram allows us to conclude that $V_{\mathrm{Si}}$ anneals out in two stages—at low temperatures ($T\lesssim 600$ °C) via capture of a mobile species (e.g., self-interstitials) and at higher temperatures ($T\gtrsim 1200$ °C) via dissociation into $V_{\mathrm{C}}$ and ${\mathrm{C}}_{\mathrm{Si}}$ defects. The Si interstitial (${\mathrm{Si}}_{\mathrm{i}}$) is also a negative-$U$ defect, with metastable $q=+1$ and $q=+3$ states. These are the only paramagnetic states of the defect, and maybe that explains why it escaped detection, even in p-type material where the migration barriers are at least 2.7 eV high. Full article

Here, we present a proof-of-concept experiment where phase engineering at the nanoscale of 2D transition metal dichalcogenides (TMDC) flakes (from semiconducting 2H phase to metallic 1T phase) can be achieved by thermal annealing of a TMDC/Au/mica system. The local dewetting of Au particles and resulting tensile strain produced on the TMDC flakes, strongly bound to the Au surface through effective S-Au bonds, can induce a local structural phase transition. An important role is also played by the defects induced by the thermal annealing: when vacancies are present, the threshold strain needed to trigger the phase transition is significantly reduced. Scanning photoelectron microscopy (SPEM) was revealed to be the perfect tool to monitor the described phenomena. Full article

We examined the effects of aluminum (Al) capping layer thickness on the electrical performance and stability of high-mobility indium–gallium–tin oxide (IGTO) thin-film transistors (TFTs). The Al capping layers with thicknesses (t_Als) of 3, 5, and 8 nm were deposited, respectively, on top of the IGTO thin film by electron beam evaporation, and the IGTO TFTs without and with Al capping layers were subjected to thermal annealing at 200 °C for 1 h in ambient air. Among the IGTO TFTs without and with Al capping layers, the TFT with a 3 nm thick Al capping layer exhibited excellent electrical performance (field-effect mobility: 26.4 cm²/V s, subthreshold swing: 0.20 V/dec, and threshold voltage: −1.7 V) and higher electrical stability under positive and negative bias illumination stresses than other TFTs. To elucidate the physical mechanism responsible for the observed phenomenon, we compared the O1s spectra of the IGTO thin films without and with Al capping layers using X-ray photoelectron spectroscopy analyses. From the characterization results, it was observed that the weakly bonded oxygen-related components decreased from 25.0 to 10.0%, whereas the oxygen-deficient portion was maintained at 24.4% after the formation of the 3 nm thick Al capping layer. In contrast, a significant increase in the oxygen-deficient portion was observed after the formation of the Al capping layers having t_Al values greater than 3 nm. These results imply that the thicker Al capping layer has a stronger gathering power for the oxygen species, and that 3 nm is the optimum thickness of the Al capping layer, which can selectively remove the weakly bonded oxygen species acting as subgap tail states within the IGTO. The results of this study thus demonstrate that the formation of an Al capping layer with the optimal thickness is a practical and useful method to enhance the electrical performance and stability of high-mobility IGTO TFTs. Full article

High quality polycrystalline bilayers of aluminium doped ZnO (Al:ZnO) were successively electrodeposited in the form of columnar structures preferentially oriented along the $\left(10\overline{1}1\right)$ crystallographic direction from aqueous solution of zinc nitrate (Zn(NO₃)₂) at negative electrochemical potential of E_C = (−0.8)–(−1.2) V and moderate temperature of 80 °C on gallium rich (30% Ga) chalcopyrite selenide Cu(In,Ga)Se₂ (CIGS) with chemically deposited ZnSe buffer (ZnSe/Cu(In,Ga)Se₂/Mo/glass). The aluminium doped ZnO layer properties have initially been probed by deposition of Al:ZnO/i-ZnO bilayers directly on Mo/glass substrates. The band-gap energy of the Al:ZnO/i-ZnO reference layers was found to vary from 3.2 to 3.7 eV by varying the AlCl₃ solute dopant concentration from 1 to 20 mM. The electrical resistivity of indium-pellet contacted highly doped Al:ZnO sheet of In/Al:ZnO/i-ZnO/Mo/glass reference samples was of the order ρ ~10⁻⁵ Ω·cm; the respective carrier concentration of the order 10²² cm⁻³ is commensurate with that of sputtered Al:ZnO layers. For crystal quality optimization of the bilayers by maintenance of the volatile selenium content of the chalcopyrite, they were subjected to 2-step annealing under successive temperature raise and N₂ flux regulation. The hydrostatic compressive strain due to Al³⁺ incorporation in the ZnO lattice of bilayers processed successively with 5 and 12 mM AlCl₃ dopant was ε_h = −0.046 and the respective stress σ_h = −20 GPa. The surface reflectivity of maximum 5% over the scanned region of 180–900 nm and the (optical) band gap of E_g = 3.67 eV were indicative of the high optical quality of the electrochemically deposited (ECD) Al:ZnO bilayers. Full article