Search Results (401)

In this paper, the accuracy of basic and advanced spiral inductor models for gallium nitride (GaN) integrated inductors is evaluated. Specifically, the experimental measurements of geometrically scaled circular spiral inductors, fabricated in a radio frequency (RF) GaN-on silicon technology, are exploited to estimate the errors of two lumped geometrically scalable models, i.e., a simple π-model with seven components and an advanced model with thirteen components. The comparison is performed by using either the standard performance parameters, such as inductance (L), quality factor (Q-factor), and self-resonance frequency (SRF), or the two-port scattering parameters (S-parameters). The comparison reveals that despite a higher complexity, the developed advanced model achieves a significant reduction in SRF percentage errors in a wide range of geometrical parameters, while enabling an accurate estimation of two-port S-parameters. Indeed, the correct evaluation of both SRF and two-port S-parameters is crucial to exploit the model in an actual circuit design environment by properly setting the inductor geometrical parameters to optimize RF performance. Full article

Gallium nitride (GaN) enhancement-mode high-electron-mobility transistors ( E-HEMTs) deliver superior performance compared to traditional silicon (Si) and silicon carbide (SiC) counterparts. Their faster switching speeds, lower on-state resistances, and higher operating frequencies enable more efficient and compact power converters. However, their integration into high-power applications is limited by critical reliability concerns, particularly regarding their short-circuit (SC) withstand capability and overvoltage (OV) resilience. GaN devices typically exhibit SC withstand times of only a few hundred nanoseconds, needing ultrafast protection circuits, which conventional desaturation (DESAT) methods cannot adequately provide. Furthermore, their high switching transients increase the risk of false activation events. The lack of avalanche capability and the dynamic nature of GaN breakdown voltage exacerbate issues related to OV stress during fault conditions. Although SC-related behaviour in GaN devices has been previously studied, a focused and comprehensive review of protection strategies tailored to GaN technology remains lacking. This paper fills that gap by providing an in-depth analysis of SC and OV failure phenomena, coupled with a critical evaluation of current and next-generation protection schemes suitable for GaN-based high-power converters. Full article

Gallium nitride high-electron-mobility transistors (GaN HEMTs) are critical for high-power applications like AI power supplies and robotics but face reliability challenges due to increased dynamic ON-resistance (R_{DS_ON}) from electrical and thermomechanical stresses. This paper presents a novel self-calibrating temperature-sensitive electrical parameter (TSEP) model that uses gate leakage current (I_G) to estimate junction temperature with high accuracy, uniquely addressing aging effects overlooked in prior studies. By integrating I_G, aging-induced degradation, and failure-in-time (FIT) models, the approach achieves a junction temperature estimation error of less than 1%. Long-term hard-switching tests confirm its effectiveness, with calibrated R_{DS_ON} measurements enabling precise remaining useful life (RUL) predictions. This methodology significantly improves GaN HEMT reliability assessment, enhancing their performance in resilient power electronics systems. Full article

The increasing need for high-data-rate wireless applications in 5G and IoT networks requires sophisticated power amplifier (PA) designs in the sub-6 GHz spectrum. This work introduces a high-efficiency Gallium Nitride (GaN)-based power amplifier optimized for the 2.3–2.5 GHz frequency band, using digital pre-distortion (DPD) to improve spectral fidelity and reduce distortion. The design employs load modulation and dynamic biasing to optimize power-added efficiency (PAE) and linearity. Simulation findings indicate a gain of 13 dB, a 3 dB compression point at 29.7 dBm input power, and 40 dBm output power, with a power-added efficiency of 60% and a drain efficiency of 65%. The power amplifier achieves a return loss of more than 15 dB throughout the frequency spectrum, ensuring robust impedance matching and consistent performance. Electromagnetic co-simulations confirm its stability under high-frequency settings, rendering it appropriate for next-generation high-efficiency wireless communication systems. Full article

The initial surface reaction of gallium nitride (GaN) grown by atomic layer deposition (GaN-ALD) was investigated using density functional theory (DFT) calculations. Trimethylgallium (TMG) and ammonia (NH₃) were used as gallium (Ga) and nitrogen (N) precursors, respectively. DFT calculations at the B3LYP/6-311+G(2d,p) and 6-31G(d) levels were performed to compute relative energies and optimize chemical structures, respectively. TMG adsorption on Si₁₅H₁₈–(NH₂)₂ and Si₁₅H₂₀=(NH)₂ clusters was modeled, where –NH₂ and =NH surface species served as adsorption sites. The reaction mechanisms in the adsorption and nitridation steps were investigated. The results showed that TMG can adsorb on both surface adsorption sites. In the initial adsorption stage, TMG adsorbs onto =NH- and –NH₂-terminated Si(100) surfaces with activation energies of 1.11 and 2.00 eV, respectively, indicating that the =NH site is more reactive. During subsequent NH3 adsorption, NH₃ adsorbs onto the residual TMG on the =NH- and –NH₂-terminated surfaces with activation energies of approximately 2.00 ± 0.02 eV. The reaction pathways indicate that NH₃ adsorbs via similar mechanisms on both surfaces, resulting in comparable nitridation kinetics. Furthermore, this study suggests that highly reactive NH₂⁻ species generated in the gas phase from ionized NH₃ may help reduce the process temperature in the GaN-ALD process. Full article

Recent measurements of the band properties of AlN and GaN by fluorescence yield absorption and soft X-ray emission spectroscopies revealed that their valence band (VB) is composed of two separate subbands. The upper VB subband of GaN is composed of gallium sp and nitrogen p orbitals; the lower subband consists of metal d and nitrogen s orbitals. These findings were confirmed by extensive ab initio simulations. These results are not consistent with the standard tetrahedrally coordinated semiconductors, which are bonded by sp³-hybridized orbitals of metal and nonmetal atoms. The new analysis techniques and ab initio simulations create a new picture, allowing the calculation of overlap integrals to determine the bond order in these crystals. According to these results, bonding occurs between resonant p-states of nitrogen and sp³-hybridized metal orbitals in tetrahedral nitrides, allowing tetrahedral symmetry to be maintained. A similar resonant bonding mechanism is observed in hexagonal BN, where the p orbitals of nitrogen create three resonant states necessary for maintaining the planar symmetry of the lattice. In addition, nonresonant $\pi$-type bonds in BN are created by the overlap of $p_z$ orbitals of boron and nitrogen. BN bonding differs from that in graphene, where carbon states are fully sp²-hybridized. Additionally, $\pi$-type bonds in graphene have no ionic contributions, which leads to the formation of Dirac states with linear dispersion close to the K point, closing the band gap. Full article

Near-field imaging of the hybrid surface plasmon-phonon polaritons on the n-GaN semiconductor was performed using a scattering scanning near-field optical microscope at the selected frequencies of 920 cm⁻¹ and 570 cm⁻¹. The experimental measurements and numerical modeling data were in good agreement, revealing the large propagation distances on the n-GaN semiconductor and other insights which could be obtained by analyzing the dispersion characteristics of hybrid polaritons. In particular, the decay lengths of polaritons at the excitation frequency of 920 cm⁻¹ were measured to be up to 25 and 30 µm in experiment and theory, respectively. In the case of excitation at the frequency of 570 cm⁻¹, the surface plasmon-phonon polaritons’ decay distances were 25 µm and 105 µm, respectively, noting the limitations of the near-field optical microscope setups used. Dispersion characteristics of the resonant frequency and the damping rate of hybrid polaritons were numerically modeled and compared with the analytical calculations, validating the need for further experiment improvements. The launch conditions for the near-field observation of extraordinary coherence of the surface plasmon-phonon polaritons were also discussed. Full article

Low-Voltage DC-DC converters (LDCs) in electric vehicles require high power density and high efficiency operation over the wide range of load and input voltage variations. This paper introduces a novel topology which combines three 1 MHz half-bridge (HB) LLC resonant converters and an inverting buck–boost (IBB) converter to adjust the output voltage without frequency modulation. The switching frequency of the proposed converter is fixed at 1 MHz to achieve a constant frequency operation for the resonant converter. In the proposed topology, Gallium Nitride (GaN) devices and planar transformers are employed to optimize the converter operation at high frequency. A 1-MHz/1.8 kW-400/14 V prototype converter is built to verify the feasibility and the validity of the proposed LDC topology. Full article

The expected outstanding performance of GaN-based transistors in power applications, characterized by high switching frequency, efficiency, and compactness, requires that the design rules of converter layout optimization, filtering, and shielding need to be reexamined. Addressing the above topics, this paper reviews commercial GaN power transistors and specifies their integration techniques, including printed circuit board (PCB) embedded solutions. Then, referring to the optimization results of a half-bridge inverter leg, design techniques are presented that reduce the harmful effect of inductive and capacitive internal converter couplings, thus mitigating the electromagnetic interference (EMI) conducted emissions. Full article

As a pioneering exploration of gallium nitride (GaN) as reinforcement in metal matrix composites, this study systematically investigated the mechanical–electrical property evolution in copper matrix composites through controlled GaN incorporation—a research gap scarcely addressed previously. GaN-Cu composites with tailored GaN contents were successfully synthesized by precisely controlled mechanical alloying and powder metallurgical processing and exhibited exceptional mechanical–electrical synergies. Advanced microstructural characterization via X-ray diffraction and electron microscopy revealed the homogeneous dispersion of GaN nanoparticles within the Cu matrix, forming coherent interfacial structures. The characterization results show that GaN-Cu composites could be successfully prepared by mechanical alloying and powder metallurgy methods, and it was confirmed that GaN nanoparticles could improve the mechanical properties of metal matrix composites as reinforcement; with an exponential increase in GaN content, the decrease in conductivity became very slow. With an increase in GaN content, the electrical conductivity decreased in an “L” shape, while the hardness first increased and then decreased, but the hardness could reach up to 128.66 HV, which is about 130% higher than that of the substrate. Full article

Gallium nitride (GaN), as the core material of third-generation semiconductors, has important applications in high-temperature, high-frequency, and high-power devices, but its polishing process faces many challenges. In this work, a multifield synergistic material removal model is established to study the material removal behaviour by ultrasonic magnetorheological chemical compound polishing (UMCP) of gallium nitride wafers, and the polishing processing under different polishing solution compositions and processing conditions is used to examine the effects of the ultrasonic, chemical, and mechanical effects on the material removal rate. The results show that mechanical removal dominates during UMCP, the chemical enhancement is slightly greater than the ultrasonic action, and the synergistic interaction between the range of factors promotes better removal of the GaN materials. The percentage of mechanical removal by abrasives is about 25% to 44.63%, the mechanical removal by magnetorheological effect polishing pads is about 14.66% to 23.94%, the removal due to chemical action is about 15.52% to 23.41%, the removal due to ultrasonic action is about 11.73% to 14.66%, and the percentage of interactive removal is 6.47% to 14.36%. The abrasive composition significantly enhances the mechanical removal effect, and a higher abrasive concentration correlates to a stronger mechanical removal effect. The concentration of hydrogen peroxide has a superior effect on the chemical reaction, and too high or too low a concentration of hydrogen peroxide weakens the chemical action effect. The results of the study can provide a basis for further research on the material removal mechanism of the GaN UMCP process. Full article

This study presents a hard-switching full-bridge DC-DC converter with synchronous rectification based on Gallium Nitride (GaN) transistors to evaluate the advantages of GaN devices in power supplies. In comparison to traditional silicon-based devices, GaN transistors are utilized in both the primary and secondary stages of the converter, exploiting GaN’s lower on-resistance to enhance performance. The converter operates at a switching frequency of 300 kHz, with an input voltage range of 36 V to 75 V, delivering an output of 28 V/42 A. Experimental results show that the GaN-based converter achieves an output power of 1176 W within standard half-brick package dimensions. The measured peak efficiency is 97.1%, and the power density reaches 430 W/in³. These findings demonstrate that GaN-based converters offer superior efficiency and power density compared to conventional silicon-based designs, making them highly suitable for aerospace, automotive, and communication power supplies. Full article

Wide-bandgap semiconductor betavoltaic batteries have a promising prospect in Micro-Electro-Mechanical Systems for high power density and long working life, but their material selection is still controversial. Specifically, the silicon carbide (SiC) betavoltaic battery was reported to have higher efficiency, although its bandgap is lower than that of gallium nitride (GaN) or diamond, which is inconsistent with general assumptions. In this work, the effects of different semiconductor characteristics on the battery energy conversion process are systematically analyzed to explain this phenomenon, including beta particle energy deposition, electron–hole pair (EHP) creation energy and EHPs collection efficiency. Device efficiencies of the betavoltaic battery using SiC, GaN, diamond, gallium oxide (Ga₂O₃), aluminum nitride (AlN) and boron nitride (BN) are compared to determine the optimum semiconductor. Results show that SiC for the betavoltaic battery has higher efficiency than GaN, Ga₂O₃ and AlN because of higher EHPs collection efficiency, less energy loss and fewer material defects, which is the optimal selection currently. SiC betavoltaic batteries were prepared, with the device efficiency having reached 14.88% under an electron beam, and the device efficiency recorded as 7.31% under an isotope source, which are consistent with the predicted results. This work provides a theoretical and experimental foundation for the material selection of betavoltaic batteries. Full article

A comprehensive roadmap for advancing Electric Micromobility (EMM) systems addressing the fragmented and scarce information available in the field is defined as a transformative solution for urban transportation, targeting short-distance trips with compact, lightweight vehicles under 350 kg and maximum speeds of 45 km/h, such as bicycles, e-scooters, and skateboards, which offer flexible, eco-friendly alternatives to traditional transportation, easing congestion and promoting sustainable urban mobility ecosystems. This review aims to guide researchers by consolidating key technical insights and offering a foundation for future exploration in this domain. It examines critical components of EMM systems, including electric motors, batteries, power converters, and control strategies. Likewise, a comparative analysis of electric motors, such as PMSM, BLDC, SRM, and IM, highlights their unique advantages for micromobility applications. Battery technologies, including Lithium Iron Phosphate, Nickel Manganese Cobalt, Nickel-Cadmium, Sodium-Sulfur, Lithium-Ion and Sodium-Ion, are evaluated with a focus on energy density, efficiency, and environmental impact. The study delves deeply into power converters, emphasizing their critical role in optimizing energy flow and improving system performance. Furthermore, control techniques like PID, fuzzy logic, sliding mode, and model predictive control (MPC) are analyzed to enhance safety, efficiency, and adaptability in diverse EMM scenarios by using cutting-edge semiconductor devices like Silicon Carbide (SiC) and Gallium Nitride (GaN) in well-known configurations, such as buck, boost, buck–boost, and bidirectional converters to ensure great efficiency, reduce energy losses, and ensure compact and reliable designs. Ultimately, this review not only addresses existing gaps in the literature but also provides a guide for researchers, outlining future research directions to foster innovation and contribute to the development of sustainable, efficient, and environmentally friendly urban transportation systems. Full article