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Special Issue "Advances in SiC-Based Opto-Electronics and Sensor Fabrication and Characterization"

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: 10 January 2023 | Viewed by 811

Special Issue Editor

Dr. Antonella Sciuto
E-Mail Website1 Website2
Guest Editor
CNR-IMM National Research Council –Institute for Microelectronics and Microsystems, 95121 Catania, Italy
Interests: SiC-based sensors; optical sensors; mechanical stress effects on microelectronics; advanced microelectronics reliability; precision agriculture and environmental applications

Special Issue Information

Dear Colleagues,

The last two decades have seen intensive improvement in SiC technology. The chemical and physical properties of this wide bandgap semiconductor are widely known and appreciated today, not only by the community developing power devices for which this material is undoubtedly the optimal candidate at the moment but also by the sensor community. In fact, SiC sensor applications are increasingly being used for fields ranging from healthcare to the environment, from basic physics to geology, capable not only of monitoring various types of parameters but above all capable of operating in hostile environments in terms of temperature, humidity, chemicals, and radiation.

This Special Issue will compile recent developments in the SiC opto-electronics and sensor framework. Articles will cover various topics, ranging from but not limited to the fabrication of dedicated devices for photon generation and detection, radiation and particle monitoring, and for sensing systems and their characterization with standard and/or opportunely developed methodologies. Studies on reliability, aging, radiation hardness and harsh environmental effects on opto-electronic and sensor devices are welcome.

Dr. Antonella Sciuto
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2300 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.


  • SiC-based sensors
  • optical sensors
  • SiC opto-electronics
  • SiC sensor reliability
  • SiC sensors for harsh environments

Published Papers (1 paper)

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Radiation Hardness of 4H-SiC P-N Junction UV Photo-Detector
Materials 2022, 15(1), 264; - 30 Dec 2021
Cited by 3 | Viewed by 495
4H-SiC based p-n junction UV photo-detectors were irradiated with 600 keV He+ in the fluence range of 5 × 1011 ÷ 5 × 1014 ion/cm2 in order to investigate their radiation hardness. The effects of irradiation on the electro-optical [...] Read more.
4H-SiC based p-n junction UV photo-detectors were irradiated with 600 keV He+ in the fluence range of 5 × 1011 ÷ 5 × 1014 ion/cm2 in order to investigate their radiation hardness. The effects of irradiation on the electro-optical performance were monitored in dark condition and in the UV (200 ÷ 400 nm) range, as well as in the visible region confirming the typical visible blindness of unirradiated and irradiated SiC photo-sensors. A decrease of UV optical responsivity occurred after irradiation and two fluence regimes were identified. At low fluence (<1013 ions/cm2), a considerable reduction of optical responsivity (of about 50%) was measured despite the absence of relevant dark current changes. The presence of irradiation induced point defects and then the reduction of photo-generated charge lifetime are responsible for a reduction of the charge collection efficiency and then of the relevant optical response reduction: point defects act as recombination centers for the photo-generated charges, which recombine during the drift/diffusion toward the electrodes. At higher irradiation fluence, the optical responsivity is strongly reduced due to the formation of complex defects. The threshold between low and high fluence is about 100 kGy, confirming the radiation hardness of SiC photo-sensors. Full article
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