Semiconductor Material Growth in Thin Films and Its Model
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".
Deadline for manuscript submissions: closed (10 September 2023) | Viewed by 117
Special Issue Editor
Special Issue Information
Dear Colleagues,
Various semiconductor thin-film materials of Si, Si-Ge, compounds, oxides, and organic materials are being investigated and developed for the thin-film transistor (TFT) applications to 3D monolithic integrations, system FPDs, sensors, flexible and wearable electronics, etc. In these applications, material growth at the low-temperature substrate is essential to avoid degradation in the underlying layers. The reliability, low power consumption, higher mobility, and light weight of the devices are important. Growth models will enhance the quality and size of the grains in thin films as well.
Topics covered include, but are not limited to, the following:
Materials:
- amorphous semiconductors;
- polycrystalline semiconductors;
- single crystalline semiconductors.
Fabrication methods:
- Growth from vapor (laser CVD, ALD, MOCVD, MBE, etc.);
- Growth from melt (laser, lamp, strip-heater, plasma-jet, electron beam, m-CZ, etc.);
- Growth from solid (solid-to-solid growth, etc.);
- Bonding and polishing of the crystals (smart cut, etc.).
Characterizations of the films and the dynamics of changing grain boundaries and dislocations in the films are welcome.
Dr. Nobuo Sasaki
Guest Editor
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Keywords
- crystal orientation
- growth rate
- facet
- grain boundaries
- dislocations
- crystal growth
- interface energy
- zone melting
- continuous-wave
- pulse
