Special Issue "Advanced Nanostructured Semiconductor Materials for Optoelectronic Applications"

A special issue of Energies (ISSN 1996-1073). This special issue belongs to the section "Advanced Energy Materials".

Deadline for manuscript submissions: 30 November 2020.

Special Issue Editors

Prof. Dr. In-Hwan Lee
Website
Guest Editor
Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
Interests: thin film growth; compound semiconductors; optoelectronics; displays
Prof. Dr. Young Joon Hong
Website
Guest Editor
Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Neungdong-Ro 209, Gwangjin-Gu, Seoul, 05006 Republic of Korea
Interests: Semiconductor 3-D Nanoarchitecture Optoelectronics & Electronics; Semiconductor/Graphene van der Waals and Remote Heteroepitaxy; Quantum-Dot-based Optoelectronics; Conducting Polymer Nanostructures for Environmental and Energy Storage Applications

Special Issue Information

Dear Colleagues,

This Special Issue focuses on the development of advanced nanostructured semiconductor materials, their technologies and applications. Materials cover a range from elemental to compound semiconductors. Structures focus on nanorods or nanowires, quantum dots, and quantum wells fabricated either by top-down or by bottom-up approaches. Application-wise, the Special Issue includes, but is not limited to, light-emitting diodes, laser diodes, solar cells, photodetectors, sensors, and displays that are justified to be suitable to optoelectronic applications. Topics related to emerging deposition technologies and structural/chemical modifications for the nanostructured semiconductor materials are also welcome.

Prof. Dr. In-Hwan Lee
Prof. Dr. Young Joon Hong
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Energies is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1800 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanostructures
  • semiconductor
  • optoelectronics
  • deposition
  • modifications

Published Papers (2 papers)

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Research

Open AccessArticle
Size-Dependent and Enhanced Photovoltaic Performance of Solar Cells Based on Si Quantum Dots
Energies 2020, 13(18), 4845; https://doi.org/10.3390/en13184845 - 16 Sep 2020
Abstract
Recently, extensive studies have focused on exploring a variety of silicon (Si) nanostructures among which Si quantum dots (Si QDs) may be applied in all Si tandem solar cells (TSCs) for the time to come. By virtue of its size tunability, the optical [...] Read more.
Recently, extensive studies have focused on exploring a variety of silicon (Si) nanostructures among which Si quantum dots (Si QDs) may be applied in all Si tandem solar cells (TSCs) for the time to come. By virtue of its size tunability, the optical bandgap of Si QDs is capable of matching solar spectra in a broad range and thus improving spectral response. In the present work, size-controllable Si QDs are successfully obtained through the formation of Si QDs/SiC multilayers (MLs). According to the optical absorption measurement, the bandgap of Si QDs/SiC MLs shows a red shift to the region of long wavelength when the size of dots increases, well conforming to quantum confinement effect (QCE). Additionally, heterojunction solar cells (HSCs) based on Si QDs/SiC MLs of various sizes are presented and studied, which demonstrates the strong dependence of photovoltaic performance on the size of Si QDs. The measurement of external quantum efficiency (EQE) reveals the contribution of Si QDs to the response and absorption in the ultraviolet–visible (UV-Vis) light range. Furthermore, Si QDs/SiC MLs-based solar cell shows the best power conversion efficiency (PCE) of 10.15% by using nano-patterned Si light trapping substrates. Full article
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Open AccessArticle
Solution-Processed Titanium Oxide for Rear Contact Improvement in Heterojunction Solar Cells
Energies 2020, 13(18), 4650; https://doi.org/10.3390/en13184650 - 07 Sep 2020
Abstract
In this work, we demonstrated a heterojunction Si solar cell utilizing chemically grown titanium oxide (TiOx) as an electron-selective contact layer at its rear surface. With TiOx, the rear surface was passivated to reduce carrier recombination. The reverse saturation [...] Read more.
In this work, we demonstrated a heterojunction Si solar cell utilizing chemically grown titanium oxide (TiOx) as an electron-selective contact layer at its rear surface. With TiOx, the rear surface was passivated to reduce carrier recombination. The reverse saturation current, which is an indicator of carrier recombination, exhibited a 4.4-fold reduction after placing a TiOx layer on the rear surface. With reduced recombination, the open-circuit voltage increased from 433 mV to 600 mV and consequently, the power conversion efficiency (PCE) increased from 9.57 to 14.70%. By X-ray photoemission spectroscopy, the surface passivation was attributed to a silicon oxide interfacial layer formed during the chemical growth process. This passivation results in a 625 cm/s surface recombination velocity for the TiOx-passivated Si surface, which is 2.4 times lower than the sample without TiOx, ensuring the carriers pass through the rear contact without extensive recombination. According to these results, the band alignment for the heterojunction solar cell with and without a TiOx rear contact layer was plotted, the reduced interfacial recombination and the electron and hole blocking structure are the main reasons for the observed efficiency enhancement. Full article
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