Special Issue "III-V Semiconductor Processes and Devices"
Deadline for manuscript submissions: 31 July 2021.
Interests: modeling of semiconductor devices
Interests: nanoelectronic materials and devices
Compounds and alloys of group III and V elements are employed in a wide variety of semiconductor devices with applications spanning power electronics and high-frequency communications to optoelectronics. Compared to silicon technology, these materials allow for the fabrication of high-mobility transistors with cut-off frequency approaching the THz range, whereas band-gap engineering and the growth of super-lattices have led to a plethora of new device concepts, including tunnel-field-effect transistors for ultra-low-power applications. Recent advances in fabrication processes, allowing for the growth or bonding of III-V materials on silicon, have opened many new fields of research, such as smart-power technologies combining GaN and silicon and co-integration of photonic and electronic on a silicon platform and CMOS technologies based on III-V/Ge. This Special Issue of Electronics aims at presenting recent advantages in the fabrication, characterization, and modeling of electron devices based on III-V compounds and alloys. The scope of the Special Issue covers but is not limited to:
- Advanced fabrication processes for III-V on silicon (e.g., GaN-on-silicon, III-V-on-insulators, and co-integration of Ge and III-V);
- Characterization techniques for defects in III-V/high-k gate stacks (e.g., extraction of defect parameters from 1/f noise, capacitance/conductance vs. frequency, and RF measurements);
- Innovative device concepts based on III-V materials (e.g., tunnel-field-effect-transistors, III-V nanowires, and gate-all-around)
- Advanced modeling approaches for III-V materials and devices.
Prof. Dr Pierpaolo Palestri
Prof. Dr. Paul Hurley
Manuscript Submission Information
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