Special Issue "III-V Semiconductor Processes and Devices"

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microelectronics and Optoelectronics".

Deadline for manuscript submissions: 31 July 2021.

Special Issue Editors

Prof. Dr. Pierpaolo Palestri
Guest Editor
DPIA, University of Udine, 33100 Udine, Italy
Interests: modeling of semiconductor devices
Prof. Dr. Paul Hurley
Guest Editor
Tyndall National Institute & Department of Chemistry, University College Cork, Cork, Ireland
Interests: nanoelectronic materials and devices

Special Issue Information

Compounds and alloys of group III and V elements are employed in a wide variety of semiconductor devices with applications spanning power electronics and high-frequency communications to optoelectronics. Compared to silicon technology, these materials allow for the fabrication of high-mobility transistors with cut-off frequency approaching the THz range, whereas band-gap engineering and the growth of super-lattices have led to a plethora of new device concepts, including tunnel-field-effect transistors for ultra-low-power applications. Recent advances in fabrication processes, allowing for the growth or bonding of III-V materials on silicon, have opened many new fields of research, such as smart-power technologies combining GaN and silicon and co-integration of photonic and electronic on a silicon platform and CMOS technologies based on III-V/Ge. This Special Issue of Electronics aims at presenting recent advantages in the fabrication, characterization, and modeling of electron devices based on III-V compounds and alloys. The scope of the Special Issue covers but is not limited to:

  • Advanced fabrication processes for III-V on silicon (e.g., GaN-on-silicon, III-V-on-insulators, and co-integration of Ge and III-V);
  • Characterization techniques for defects in III-V/high-k gate stacks (e.g., extraction of defect parameters from 1/f noise, capacitance/conductance vs. frequency, and RF measurements);
  • Innovative device concepts based on III-V materials (e.g., tunnel-field-effect-transistors, III-V nanowires, and gate-all-around)
  • Advanced modeling approaches for III-V materials and devices.

Prof. Dr Pierpaolo Palestri
Prof. Dr. Paul Hurley
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1500 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Published Papers

This special issue is now open for submission.
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