Integrated Circuit-to-System Design for Advanced Sensing and Communication

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Circuit and Signal Processing".

Deadline for manuscript submissions: 30 September 2026 | Viewed by 608

Special Issue Editor


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Guest Editor
Department of Electronic Engineering, Kyung Hee University, 1732 Deogyeong-daero, Yongin-si 17104, Republic of Korea
Interests: analog and RF IC design; mixed-signal integrated circuits; sensor interface circuits; power management ICs (PMIC); wireless communication systems

Special Issue Information

Dear Colleagues,

With the rapid proliferation of the Internet of Things (IoT), autonomous vehicles, and next-generation biomedical devices, the demand for high-performance sensing and communication systems is unprecedented. To meet stringent requirements, seamless integration from the integrated circuit (IC) level to the system level is essential. This Special Issue aims to explore cutting-edge advancements in circuit and system design tailored for advanced sensing and communication applications.

We invite researchers and engineers to submit original research papers and review articles that address challenges in analog, radio frequency (RF), and mixed-signal IC design, as well as their system-level implementations. Key topics of interest include, but are not limited to, high-efficiency power management ICs (PMICs), low-dropout (LDO) regulators for noise-sensitive applications, low-power sensor interfaces, high-performance data converters, RF front-ends, and system-on-chip (SoC) integration. Moreover, we explicitly welcome submissions on emerging technologies, such as radiation-hardened designs, that ensure a robust system operation in extreme environments.

The goal of this Special Issue is to bring together innovative solutions that bridge the gap between circuit design and system application, fostering the development of intelligent and connected hardware platforms. We welcome contributions focusing on both theoretical analysis and practical hardware implementations utilizing advanced semiconductor technologies.

Dr. Younghyun Lim
Guest Editor

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Keywords

  • analog and RF IC design
  • power management IC (PMIC)
  • low dropout (LDO) regulator
  • sensor interface
  • radiation hardening
  • wireless communication
  • mixed-signal circuits
  • low-power electronics
  • system-on-chip (SoC)

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Published Papers (1 paper)

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Research

23 pages, 5405 KB  
Article
A Fully Integrated Gate-Pole-Dominant Low-Dropout Regulator with Loop-Gain Booster for Maintaining High Power-Supply Rejection over a Wide Load Current Range
by Deok Won Koh, Changin Yoon, Jeong Hoan Park, Seung Hwan Lee and Younghyun Lim
Electronics 2026, 15(9), 1825; https://doi.org/10.3390/electronics15091825 - 24 Apr 2026
Viewed by 350
Abstract
This paper introduces a fully integrated gate-pole-dominant low-dropout regulator (LDO) that eliminates the need for external capacitors while sustaining high power-supply rejection (PSR) over a broad load current range. A loop-gain booster (LGB) is proposed to maintain the DC operating point of the [...] Read more.
This paper introduces a fully integrated gate-pole-dominant low-dropout regulator (LDO) that eliminates the need for external capacitors while sustaining high power-supply rejection (PSR) over a broad load current range. A loop-gain booster (LGB) is proposed to maintain the DC operating point of the error amplifier output at its optimal value, thereby preserving a high unity-gain frequency (UGF) even as the load current varies from zero to 200 mA. The parallel signal paths within the LGB inherently produce a left-half-plane (LHP) zero, which cancels one of the poles within the UGF of the feedback loop and guarantees robust stability under diverse operating conditions. Fabricated in a 40 nm CMOS technology, the prototype occupies only 0.008 mm2 with a 4 pF on-chip compensation capacitor. The proposed LDO achieves a PSR of −72 dB at 1 MHz and −40 dB at 10 MHz when IL = 200 mA and VDO = 0.1 V, and maintains a PSR better than −78 dB at 1 MHz and −42 dB at 10 MHz when IL = 1 mA and VDO = 0.1 V. The LGB-enhanced regulator achieves excellent load and line regulation figures of 29 μV/mA and 0.75 mV/V, while the LGB itself consumes merely 7 μA out of a total quiescent current of 108 μA. Full article
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