Special Issue "Quantum Wells"

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Crystalline Materials".

Deadline for manuscript submissions: 20 February 2020.

Special Issue Editor

Dr. Peter Colter
E-Mail Website
Guest Editor
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695, USA
Interests: MOCVD growth III-V & Nitride; MOCVD equipment; solar cells

Special Issue Information

Dear Colleagues,

Quantum wells are a mainstay of light emitting semiconductor devices, LEDs, and lasers; they have also seen some application in detectors and solar cells. Quantum wells are widely studied in III-V (arsenide phosphide) materials and they are used in most III-Nitride devices. They span the spectrum from ultraviolet to the mid and far infrared operation of QWIPs and quantum cascade lasers. III-Nitride quantum well devices are on track to be the dominant source of lighting and thus are of particular interest for detailed in-depth studies. Given an understanding of strain effects, which are generally a disadvantage in the polar nitride light emitters, it may be worthwhile to see if these polarisation effects can be put to use in other devices and material systems

We invite investigators to submit papers that discuss the physical properties and fabrication of quantum wells/ super-lattices and the development of any types of quantum well-based devices. Potential topics include, but are not limited to, the following:

  • Quantum well/super-lattice stabilization of materials with miscibility gaps
  • Tunneling and strain interactions
  • Effects of strain on quantum well interfaces
  • Interface characterization and control
  • Strain balancing in super-lattices, monitoring controlling, relaxation mechanisms
  • Growth of monolithic structures with lower dimensionality such as quantum wires and dots
  • Surfactant effects on quantum well structures
  • Comparison of similar quantum well structures grown by different technologies, i.e., MBE vs MOVPE

Dr. Peter Colter
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Quantum well
  • Quantum wire
  • Short-period super-lattice
  • MOCVD interface
  • Strain balance

Published Papers (1 paper)

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Research

Open AccessArticle
Modeling Energy Bands in Type II Superlattices
Crystals 2019, 9(12), 629; https://doi.org/10.3390/cryst9120629 - 28 Nov 2019
Abstract
We present a rigorous model for the overall band structure calculation using the perturbative k · p approach for arbitrary layered cubic zincblende semiconductor nanostructures. This approach, first pioneered by Kohn and Luttinger, is faster than atomistic ab initio approaches and provides sufficiently [...] Read more.
We present a rigorous model for the overall band structure calculation using the perturbative k · p approach for arbitrary layered cubic zincblende semiconductor nanostructures. This approach, first pioneered by Kohn and Luttinger, is faster than atomistic ab initio approaches and provides sufficiently accurate information for optoelectronic processes near high symmetry points in semiconductor crystals. k · p Hamiltonians are discretized and diagonalized using a finite element method (FEM) with smoothed mesh near interface edges and different high order Lagrange/Hermite basis functions, hence enabling accurate determination of bound states and related quantities with a small number of elements. Such properties make the model more efficient than other numerical models that are usually used. Moreover, an energy-dependent effective mass non-parabolic model suitable for large gap materials is also included, which offers fast and reasonably accurate results without the need to solve the full multi-band Hamiltonian. Finally, the tools are validated on three semiconductor nanostructures: (1) the bound energies of a finite quantum well using the energy-dependent effective mass non-parabolic model; (2) the InAs bulk band structure; and (3) the electronic band structure for the absorber region of photodetectors based on a type-II InAs/GaSb superlattice at room temperature. The tools are shown to work on simple and sophisticated designs and the results show very good agreement with recently published experimental works. Full article
(This article belongs to the Special Issue Quantum Wells)
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