Special Issue "Thin Film Growth by Molecular Beam Epitaxy"

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Crystalline Materials".

Deadline for manuscript submissions: 15 December 2019.

Special Issue Editor

Guest Editor
Dr. Polychronis Tsipas

Demokritos National Centre for Scientific Research, Athens, Greece
Website | E-Mail
Interests: molecular beam epitaxy; scanning tunneling microscopy; angle-resolved photoelectron spectroscopy; X-ray photoelectron spectroscopy; high-k dielectrics; topological insulators; dirac semimetals; weyl semimetals; ferroelectrics; 2D materials and heterostructures

Special Issue Information

Dear Colleagues,

Molecular Beam Epitaxy (MBE) is a flexible technique to explore a number of materials and heterostructures in different substrate combinations. Moreover, MBE opens the way to bring materials from the lab bench to real-world applications enabling large scale production and allowing thickness control at the atomic level. A wide range of materials can be grown (from insulators, semiconductors, metals, and superconductors, to topological materials) with rich physical properties allowing the fabrication of a number of versatile applications.  

Scientists working on Thin Film Growth by Molecular Beam Epitaxy covering a broad range of materials systems and applications are invited to present their work to this Issue. This Special Issue includes, but is not limited to, the following topics:

- High-k dielectrics growth by molecular beam epitaxy;

- Ferroelectrics epitaxial growth;

- Thin films of layered transition metal dichalcogenides;

- Large area growth of van der Waals heterostructures;

- Topological materials epitaxial growth (topological insulators, Dirac and Weyl semimetals);

- Thin film characterisation by spectroscopic, microscopic, and other advanced techniques;

- Thin film devices for electronic applications.

Dr. Polychronis Tsipas
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.


  • molecular beam epitaxy
  • thin films growth
  • 2D materials
  • Van der Waals epitaxy
  • transition metal dichalcogenides
  • topological thin film materials
  • ferroelectrics
  • high-k dielectrics

Published Papers (1 paper)

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Open AccessArticle
Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy
Crystals 2019, 9(6), 308; https://doi.org/10.3390/cryst9060308
Received: 9 May 2019 / Revised: 6 June 2019 / Accepted: 12 June 2019 / Published: 14 June 2019
PDF Full-text (2380 KB) | HTML Full-text | XML Full-text
Indium-incorporation with InxGa1-xN layers on GaN-microdisks has been systematically studied against growth parameters by plasma-assisted molecular beam epitaxy. The indium content (x) of InxGa1-xN layer increased to 44.2% with an In/(In + Ga) flux ratio [...] Read more.
Indium-incorporation with InxGa1-xN layers on GaN-microdisks has been systematically studied against growth parameters by plasma-assisted molecular beam epitaxy. The indium content (x) of InxGa1-xN layer increased to 44.2% with an In/(In + Ga) flux ratio of up to 0.6 for a growth temperature of 620 °C, and quickly dropped with a flux ratio of 0.8. At a fixed In/(In + Ga) flux ratio of 0.6, we found that the indium content decreased as the growth temperature increased from 600 °C to 720 °C and dropped to zero at 780 °C. By adjusting the growth parameters, we demonstrated an appropriate InxGa1-xN layer as a buffer to grow high-indium-content InxGa1-xN/GaN microdisk quantum wells for micro-LED applications. Full article
(This article belongs to the Special Issue Thin Film Growth by Molecular Beam Epitaxy)

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