Reprint
Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
Edited by
May 2022
320 pages
- ISBN978-3-0365-3994-2 (Hardback)
- ISBN978-3-0365-3993-5 (PDF)
This book is a reprint of the Special Issue Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II that was published in
Chemistry & Materials Science
Engineering
Physical Sciences
Summary
Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems.
Format
- Hardback
License
© 2022 by the authors; CC BY-NC-ND license
Keywords
energy storage system; power conditioning system; silicon carbide; vanadium redox flow batteries; AlGaN/GaN; SiC; high electron mobility transistor; Schottky barrier diode; breakdown field; noise; charge traps; radio frequency; wide-bandgap (WBG); gallium nitride (GaN); silicon carbide (SiC); high electron mobility transistor (HEMT); metal-oxide-semiconductor field effect transistor (MOSFET); driving technology; nickel oxide; annealing temperature; crystallite size; optical band gap; electrochromic device; indium oxide thin film; solution method; plasma surface treatment; annealing temperature; bias stability; aluminum nitride; silicon carbide; Schottky barrier diodes; radio frequency sputtering; X-ray diffraction; X-ray photoelectron spectroscopy; aluminum nitride; piezoelectric micromachined ultrasonic transducers; ranging; time of flight (TOF); time to digital converter circuit (TDC); AlGaN/GaN heterojunction; p-GaN gate; unidirectional operation; rectifying electrode; first-principles; density functional theory; pure β-Ga2O3; Sr-doped β-Ga2O3; p-type doping; band structure; density of states; optical absorption; AlN buffer layer; NH3 growth interruption; strain relaxation; GaN-based LED; low defect density; gate bias modulation; palladium catalyst; gallium nitride; nitrogen dioxide gas sensor; high electron mobility transistor; laser micromachining; sapphire; silicon carbide; AlGaN/GaN heterostructures; high-electron mobility devices; p-GaN gate HEMT; normally off; low-resistance SiC substrate; temperature; gallium nitride (GaN); high electron-mobility transistor (HEMT); equivalent-circuit modeling; microwave frequency; scattering-parameter measurements; temperature; GaN; MIS-HEMTs; fabrication; threshold voltage stability; supercritical technology; GaN power HEMTs; breakdown voltage; current collapse; compensation ratio; auto-compensation; carbon doping; HVPE; AlN; high-temperature; buffer layer; nitridation; gallium nitride; high-electron mobility transistor; heterogeneous integration; SOI; QST; GaN; crystal growth; cubic and hexagonal structure; blue and yellow luminescence; electron lifetime; silicon carbide; wafer dicing; stealth dicing; laser thermal separation; dry processing; laser processing; wide bandgap semiconductor; gallium nitride; photovoltaic module; digital signal processor; synchronous buck converter; AlN; polar; semi-polar; non-polar; magnetron sputtering; HTA; GaN-HEMT mesa structures; 2DEG; X-ray sensor; X-ray imaging; n/a