Abdelaziz Hamdoun was born in Zemamra, Morocco. He received an M.A.Sc. degree in Telecommunication Systems Engineering from the University of Rennes 1, Rennes, France, in 2012, and a co-joint Ph.D. degree in Electrical and Telecommunications Engineering in 2016 from both Carleton University, Ottawa, Canada, and the University of Rennes 1, Rennes, France. He is currently working as an associate professor at XLIM Laboratory at the University of Poitiers. His research activities include the characterization and modeling of RF/microwave semiconductor devices based on GaN technology, the design of microwave integrated circuits in both GaN and CMOS technology, and the design of active frequency reconfigurable antennas and electronical beam-forming antenna arrays.

FARID MEDJDOUB is a CNRS senior scientist and has led the wide bandgap activities at IEMN in France since 2014. He received his Ph.D. in Electrical Engineering from the University of Lille in 2004. Then, he moved to the University of Ulm in Germany as a research associate before joining IMEC as a senior scientist in 2008. Multiple state-of-the-art results have been achieved in the frame of his work. Among others, world record thermal stability up to 1000°C for a field effect transistor, the best combination of cut-off frequency/breakdown voltage, and highest lateral GaN-on-silicon breakdown voltage using local substrate removal have been achieved. His research interests are the design, fabrication, and characterization of innovative GaN-based devices. He is the author and co-author of more than 130 papers in this field. He holds several patents deriving from his research. He serves as an editor for Superlattices and Microstructures. He is also a reviewer for various journals and is a TPC member of several conferences. He will be chairing the EuMiC conference within EuMW 2019 that will be held in Paris. He is part of the H2020 review panel for the wide bandgap specific calls. Starting from 2019, he will be leading the nitride power activities within the national French network called GaNex.

MOHAMED HIMDI received the Ph.D. degree in Signal Processing and Telecommunications from the University of Rennes 1, France, in 1990. Since 2003, he has been a professor at the University of Rennes 1 and the Head of the High Frequency and Antenna Department, Institut d’Electronique et des Technologies du numéRique, since 2013. He has authored or co-authored 151 journal articles and over 350 papers in conference proceedings. He has also co-authored ten book chapters. He holds 46 patents. His research interests include passive and active millimeter-wave antennas, the development of new architectures of antenna arrays, and new three-dimensional (3D) antenna technologies. He was a Laureate of the 2D National Competition for the Creation of Enterprises in Innovative Technologies (Ministry of Industry and Education), in 2000. In March 2015, he received the JEC-AWARD in Paris for a pure composite material antenna embedded into a motorhome roof for digital terrestrial television reception. He also received the Valorization Trophy 2021 from the Rennes Innovation Campus.

MALEK ZEGAOUI is a CNRS senior engineer research at IRCICA/IEMN in France. He is affiliated with the Department of Circuit and System. He received his MS and Ph.D. degrees in Electrical Engineering from the University of Lille in France in 2001 and 2005, respectively. He has conducted 10 years of research based on the design, processing, and characterization of new electronic InP devices (optical switch devices) and bT-AsGa ultra-fast nanoscale photoconductive switching. In 2010, he was recruited by the National French Research Center (CNRS) in rance for research based on the design, processing, and characterization of new electronic GaN devices. Recently, he joined the Nano Device Group (IEMN) for the fabrication of ultra-fast photodiodes based on InP and Rf and DC GaN devices. Malek ZEGAOUI´s research interests include the processing and characterization of new electronic devices based on InP and wide bandgap semiconductors for millimeter-wave power amplification and low-noise applications, as well as for high power conversion.

OLIVIER LAFOND received a Ph.D. degree in Signal Processing and Telecommunications from the University of Rennes 1, Rennes, France, in 2000. Since October 2002, he has been an associate professor at the Institut d’Electronique et des Technologies du numéRique (IETR), University of Rennes. Since 2020, he has bee a full professor at IETR.  He has authored or co-authored 47 journal papers and 67 papers in conference proceedings. He has also authored/co-authored four book chapters. He holds eight patents in the area of antennas. His research activities concern passive and active millimeter- and sub-millimeter wave antennas, quasi-optical systems (inhomogeneous lens), and plasma antennas. He has been the leader of one ESOA course for 10 years concerning millimeter-wave antennas.