Jing Yan is based at the College of Physics and Electronic Engineering, Qilu Normal University, Jinan, Shandong 250200, China (email: jndxclyj@163.com). Research highlights: 1. Integrating BiFeO3 thick films on stainless steel foils/Ti foils with an optimized piezoelectric and ferroelectric performance. 2. Boosting the energy storage performance and the ferroelectric properties of bismuth-layer-structured ferroelectric films. 3. Investigating the leakage mechanisms and the aging effects on fatigue properties for the imprinted BiFeO3 films. Publication summary: 12 first-author publications in journals.  Selected publications: (1）Jing Yan, et al., Bismuth layer-structured Bi4Ti3O12-CaBi4Ti4O15 intergrowth ferroelectric films for high-performance dielectric energy storage on Si substrate. Applied Surface Science, 2023, 636:157851(1-8). (2）Jing Yan, et al., Highly (00l)-textured BiFeO3 thick films integrated on stainless steel foils with an optimized piezoelectric performance. Journal of the European Ceramic Society. 2022, 3454-3462. (3）Jing Yan, et al., Boosting energy storage performance of low-temperature sputtered CaBi2Nb2O9 thin film capacitors via rapid thermal annealing. Journal of Advanced Ceramic, 2021,10: 627-735. (4）Jing Yan, et al., Low temperature deposition of BiFeO3 films on Ti foils for piezoelectric applications. Scripta Materialia, 2021, 204: 114152 (1-5).