Dinusha Herath Mudiyanselage is currently pursuing a Ph.D. degree in the School of Electrical, Computer, and Energy Engineering at Arizona State University. He obtained his M.S. degrees in Physics and Electrical Engineering from Iowa State University and his B.S. (honors) in Physics from the University of Peradeniya, Sri Lanka. His research primarily centers on solid-state materials and devices utilizing wide-bandgap (WBG) and ultra-wide-bandgap (UWBG) semiconductors like GaN, Ga2O3, and AlN. His work involves thin-film epitaxy, device fabrication, semiconductor device physics, and characterization.
Dr. Kai Fu is an Assistant Professor in the Department of Electrical and Computer Engineering at the University of Utah. He received his Ph.D. degree in Microelectronics and Solid-State Electronics from the University of Chinese Academy of Sciences in 2013. He was a Research Scientist at Rice University from 2021 to 2022 and an Assistant Research Scientist at Arizona State University from 2018 to 2021. He was an Associate Professor in the nanofabrication facility at Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), the Chinese Academy of Sciences (CAS) from 2015 to 2017 after earning his Ph.D. degree there and a subsequent two years of postdoctoral experience. He has worked on GaN-based electrics for over ten years. His current research interests are WBG and UWBG semiconductors (e.g., GaN, Ga2O3, AlN, BN, and diamond), including material epitaxy sciences, advanced nanofabrication technologies, semiconductor devices physics, and characterizations.
Dr. Yuji Zhao received a B.S. degree in Microelectronics from Fudan University, China, in 2008 and a Ph.D. degree in Electrical and Computer Engineering from the University of California, Santa Barbara (UCSB) in 2012 after Nobel Laureate Professor Shuji Nakamura. He currently works at the Department of Electrical Engineering at Arizona State University. His research interests mainly include InGaN, light-emitting diodes (LEDs), semiconductor device physics, optoelectronics, and nanoelectronics. Since joining ASU in August 2014, Dr. Zhao has received the 2019 Presidential Early Award for Scientists and Engineers (PECASE), the 2019 MIT TR 35 – China Award, the 2017 ASU Fulton Outstanding Assistant Professor Award, the 2016 DoD DTRA Young Investigator Award, the 2015 NASA Early Career Faculty Award, and the 2015 Bisgrove Scholar Career Faculty Award.
Dr. Houqiang Fu is an Assistant Professor in the School of Electrical, Computer and Energy Engineering at Arizona State University (ASU). Prior to joining ASU, he was an Assistant Professor at Iowa State University. He received his PhD degree from ASU and his BS degree from Wuhan University. His research focuses on wide/ultrawide-bandgap semiconductor materials and devices for power and RF electronics, optoelectronics, and photonics. He has been the recipient of several awards, including the NSF CAREER Award and Electronics Young Investigator Award.
