- Article
A Comparative Study of n- and p-Channel FeFETs with Ferroelectric HZO Gate Dielectric
- Paul Jacob,
- Pooja C. Patil,
- Shan Deng,
- Kai Ni,
- Khushwant Sehra,
- Mridula Gupta,
- Manoj Saxena,
- David MacMahon and
- Santosh Kurinec
This study investigates the electrical characteristics observed in n-channel and p-channel ferroelectric field effect transistor (FeFET) devices fabricated through a similar process flow with 10 nm of ferroelectric hafnium zirconium oxide (HZO) as th...

