He, H.; Yuan, X.; Wu, W.; Lee, C.; Zhao, Y.; Liu, Z.
Impact of Al Alloying/Doping on the Performance Optimization of HfO2-Based RRAM. Electronics 2024, 13, 2384.
https://doi.org/10.3390/electronics13122384
AMA Style
He H, Yuan X, Wu W, Lee C, Zhao Y, Liu Z.
Impact of Al Alloying/Doping on the Performance Optimization of HfO2-Based RRAM. Electronics. 2024; 13(12):2384.
https://doi.org/10.3390/electronics13122384
Chicago/Turabian Style
He, Huikai, Xiaobo Yuan, Wenhao Wu, Choonghyun Lee, Yi Zhao, and Zongfang Liu.
2024. "Impact of Al Alloying/Doping on the Performance Optimization of HfO2-Based RRAM" Electronics 13, no. 12: 2384.
https://doi.org/10.3390/electronics13122384
APA Style
He, H., Yuan, X., Wu, W., Lee, C., Zhao, Y., & Liu, Z.
(2024). Impact of Al Alloying/Doping on the Performance Optimization of HfO2-Based RRAM. Electronics, 13(12), 2384.
https://doi.org/10.3390/electronics13122384