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Open AccessArticle

A Low Impact Ionization Rate Poly-Si TFT with a Current and Electric Field Split Design

1
Department of Electronic Engineering, Feng Chia University, Taichung 407, Taiwan
2
Department of Digital Multimedia Technology, Vanung University, Zhongli 320, Taiwan
3
Department of Electrical Engineering, National Central University, Zhongli 320, Taiwan
4
Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan
*
Author to whom correspondence should be addressed.
Coatings 2019, 9(8), 514; https://doi.org/10.3390/coatings9080514
Received: 29 June 2019 / Revised: 29 July 2019 / Accepted: 9 August 2019 / Published: 13 August 2019
(This article belongs to the Special Issue Semiconductor Thin Films)
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Abstract

In this study, a novel low impact ionization rate (low-IIR) poly-Si thin film transistor featuring a current and electric field split (CES) structure with bottom field plate (BFP) and partial thicker channel raised source/drain (RSD) designs is proposed and demonstrated. The bottom field plate design can allure the electron and alter the electron current path to evade the high electric field area and therefore reduce the device IIR and suppress the kink effect. A two-dimensional device simulator was applied to describe and compare the current path, electric field magnitude distributions, and IIR of the proposed structure and conventional devices. In addition, the advantages of a partial thicker channel RSD design are present, and the leakage current of CES-thin-film transistor (TFT) can be reduced and the ON/OFF current ratio be improved, owing to a smaller drain electric field. View Full-Text
Keywords: polycrystalline silicon (poly-Si); thin-film transistor (TFT); current and electric field split (CES); kink effect; field plate (FP); raised source/drain (RSD) polycrystalline silicon (poly-Si); thin-film transistor (TFT); current and electric field split (CES); kink effect; field plate (FP); raised source/drain (RSD)
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Chien, F.-T.; Hsueh, K.-P.; Hong, Z.-J.; Lin, K.-T.; Tsai, Y.-T.; Chiu, H.-C. A Low Impact Ionization Rate Poly-Si TFT with a Current and Electric Field Split Design. Coatings 2019, 9, 514.

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