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Open AccessArticle

Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells

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School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
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Mechanical and Automation Engineering, Da-Yeh University, Changhua 51591, Taiwan
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Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan
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Industry-University Center, Da-Yeh University, Changhua 51591, Taiwan
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Chengyi University College, Jimei University, Xiamen 361021, China
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Faculty of Materials and Energy, Southwest University, Chongqing 400715, China
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Department of Physics, OSED, Xiamen University, Xiamen 361005, China
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Author to whom correspondence should be addressed.
Nanomaterials 2019, 9(10), 1392; https://doi.org/10.3390/nano9101392
Received: 25 August 2019 / Revised: 17 September 2019 / Accepted: 25 September 2019 / Published: 29 September 2019
In this study, needle-like and pyramidal hybrid black silicon structures were prepared by performing metal-assisted chemical etching (MACE) on alkaline-etched silicon wafers. Effects of the MACE time on properties of the black silicon wafers were investigated. The experimental results showed that a minimal reflectance of 4.6% can be achieved at the MACE time of 9 min. The height of the nanostructures is below 500 nm, unlike the height of micrometers needed to reach the same level of reflectance for the black silicon on planar wafers. A stacked layer of silicon nitride (SiNx) grown by inductively-coupled plasma chemical vapor deposition (ICPCVD) and aluminum oxide (Al2O3) by spatial atomic layer deposition was deposited on the black silicon wafers for passivation and antireflection. The 3 min MACE etched black silicon wafer with a nanostructure height of less than 300 nm passivated by the SiNx/Al2O3 layer showed a low surface recombination rate of 43.6 cm/s. Further optimizing the thickness of ICPCVD-SiNx layer led to a reflectance of 1.4%. The hybrid black silicon with a small nanostructure size, low reflectance, and low surface recombination rate demonstrates great potential for applications in optoelectronic devices. View Full-Text
Keywords: black silicon; passivation; metal-assisted chemical etching black silicon; passivation; metal-assisted chemical etching
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Hsu, C.-H.; Liu, S.-M.; Lien, S.-Y.; Zhang, X.-Y.; Cho, Y.-S.; Huang, Y.-H.; Zhang, S.; Chen, S.-Y.; Zhu, W.-Z. Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells. Nanomaterials 2019, 9, 1392.

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