Feasible Route for a Large Area Few-Layer MoS2 with Magnetron Sputtering
1
School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
2
State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
*
Author to whom correspondence should be addressed.
†
These authors have contributed equally to this work.
Nanomaterials 2018, 8(8), 590; https://doi.org/10.3390/nano8080590
Received: 20 June 2018
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Revised: 30 July 2018
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Accepted: 30 July 2018
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Published: 3 August 2018
(This article belongs to the Special Issue Preparation and Properties of 2D Materials)
In this article, we report continuous and large-area molybdenum disulfide (MoS2) growth on a SiO2/Si substrate by radio frequency magnetron sputtering (RFMS) combined with sulfurization. The MoS2 film was synthesized using a two-step method. In the first step, a thin MoS2 film was deposited by radio frequency (RF) magnetron sputtering at 400 °C with different sputtering powers. Following, the as-sputtered MoS2 film was further subjected to the sulfurization process at 600 °C for 60 min. Sputtering combined with sulfurization is a viable route for large-area few-layer MoS2 by controlling the radio-frequency magnetron sputtering power. A relatively simple growth strategy is demonstrated here that simultaneously enhances thin film quality physically and chemically. Few-layers of MoS2 are established using Raman spectroscopy, X-ray diffractometer, high-resolution field emission transmission electron microscope, and X-ray photoelectron spectroscopy measurements. Spectroscopic and microscopic results reveal that these MoS2 layers are of low disorder and well crystallized. Moreover, high quality few-layered MoS2 on a large-area can be achieved by controlling the radio-frequency magnetron sputtering power.
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Keywords:
few-layer MoS2; magnetron sputtering; magnetron sputtering power; raman spectroscopy; disorder
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MDPI and ACS Style
Zhong, W.; Deng, S.; Wang, K.; Li, G.; Li, G.; Chen, R.; Kwok, H.-S. Feasible Route for a Large Area Few-Layer MoS2 with Magnetron Sputtering. Nanomaterials 2018, 8, 590. https://doi.org/10.3390/nano8080590
AMA Style
Zhong W, Deng S, Wang K, Li G, Li G, Chen R, Kwok H-S. Feasible Route for a Large Area Few-Layer MoS2 with Magnetron Sputtering. Nanomaterials. 2018; 8(8):590. https://doi.org/10.3390/nano8080590
Chicago/Turabian StyleZhong, Wei, Sunbin Deng, Kai Wang, Guijun Li, Guoyuan Li, Rongsheng Chen, and Hoi-Sing Kwok. 2018. "Feasible Route for a Large Area Few-Layer MoS2 with Magnetron Sputtering" Nanomaterials 8, no. 8: 590. https://doi.org/10.3390/nano8080590
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