Enhancement of Carrier Mobility in Multilayer InSe Transistors by van der Waals Integration

Two-dimensional material indium selenide (InSe) holds great promise for applications in electronics and optoelectronics by virtue of its fascinating properties. However, most multilayer InSe-based transistors suffer from extrinsic scattering effects from interface disorders and the environment, which cause carrier mobility and density fluctuations and hinder their practical application. In this work, we employ the non-destructive method of van der Waals (vdW) integration to improve the electron mobility of back-gated multilayer InSe FETs. After introducing the hexagonal boron nitride (h-BN) as both an encapsulation layer and back-gate dielectric with the vdW interface, as well as graphene serving as a buffer contact layer, the electron mobilities of InSe FETs are substantially enhanced. The vdW-integrated devices exhibit a high electron mobility exceeding 103 cm2 V−1 s−1 and current on/off ratios of ~108 at room temperature. Meanwhile, the electron densities are found to exceed 1012 cm−2. In addition, the fabricated devices show an excellent stability with a negligible electrical degradation after storage in ambient conditions for one month. Electrical transport measurements on InSe FETs in different configurations suggest that a performance enhancement with vdW integration should arise from a sufficient screening effect on the interface impurities and an effective passivation of the air-sensitive surface.


Introduction
Two-dimensional semiconductors (2DSM) have been widely employed as field effect transistor (FET) channel materials due to their tunable energy band structures and excellent electronic properties [1,2].With dangling-bond-free surfaces and atomically uniform thicknesses, they hold great promise for replacing conventional silicon-based devices to overcome the performance limitations caused by short channel effects.Moreover, the transport behaviors of 2DSM could be manipulated through creating van der Waals (vdW) heterostructures without strict lattice matching or processing compatibility [3][4][5].Unlike bulk materials, the performances of 2DSM-based devices are controlled and determined by the surface and interface characteristics of the channel, which typically involve the semiconductor surface, 2DSM-metal contact, and 2DSM-dielectric interface [6][7][8].First, the surface effect in a 2DSM transistor mainly stems from the interaction between the surface of the channel and active ingredients in air, resulting in the modification of fundamental properties for sensitive 2DSM [9].Second, the non-ideal 2DSM-metal contact is one of Nanomaterials 2024, 14, 382 2 of 10 the major performance-limiting factors for 2DSM transistors, which arises from the gap states and interface disorders induced by the lithography and deposition processes and leads to the Fermi-level pinning (FLP) effect at the contact interface [10,11].Third, the 2DSM-dielectric interface, especially for conventional dielectrics such as SiO 2 and Al 2 O 3 , is responsible for the lowered carrier mobility due to the charged surface states, impurities, and surface roughness [12].So far, extensive efforts have been made to improve the channel properties and push the performance limit of transistors by using various strategies, including contact optimization [13,14], reduction of impurity scattering [15], dielectric engineering [16][17][18], atomic vacancy healing and so on [19,20].
2D indium selenide (InSe) is a highly promising material for future nanoelectronics in virtue of several unique characteristics, such as a small effective electron mass, good charge transport behavior, and extraordinary mechanical properties [21,22].Recent studies have shown that thin InSe layers exhibit spontaneous surface oxidation upon exposure to ambient atmosphere, forming charged traps at the surface and remarkable current hysteresis in transistors [23,24].To address the reliability issue, various encapsulation approaches have been explored and proven to be effective in suppressing the infiltration of moisture and oxygen [25].On the other hand, the charge transport of InSe transistors is sensitive to the dielectric environment.It has been revealed that the electron mobility of InSe nanosheets can be greatly improved by modulating the types of dielectric materials due to the strong suppression of carrier scattering [26,27].In particular, integrating 2DSM with different dielectrics via vdW interactions provides vast opportunities for probing the intrinsic properties of 2DSM by creating high-quality interfaces with a low interfacial state density [28,29].Despite the rapid progress in boosting the carrier mobility of InSe channels, its surface and interface issues must still be effectively addressed to push the development of high-performance InSe FETs [30,31].
In this study, we aim to improve the charge carrier mobility of InSe transistors by a non-destructive vdW integration process.In this approach, a hybrid gate dielectric, composed of a hexagonal boron nitride (h-BN) layer and subjacent SiO 2 layer, is used to engineer the 2DSM-dielectric interface, a graphene buffer layer serves as electrical contacts to the InSe channel, and a top h-BN encapsulation layer is integrated to isolate the InSe layer from ambient conditions and achieve the long-term stability of the devices.This strategy enables us to gain a high electron mobility of up to 1078 cm 2 V −1 s −1 at room temperature and an on/off ratio of up to ~10 8 , which is larger than that of transistors based on the bare SiO 2 dielectric and hybrid gate dielectric of polymer and Al 2 O 3 .Moreover, optoelectronic measurements in the multilayer InSe transistors show an excellent photoresponse with a high photoresponsivity and external quantum efficiency (EQE).

Fabrication of Multilayer InSe Transistors
Bulk h-BN and graphene crystals were purchased from HQ graphene.Bulk InSe crystals were synthesized from melting In powders and Se powders in a sealed vacuum tube inside a furnace.The sealed tube was heated to 700 • C for 3 h and kept at 700 • C for 3 days.After that, it was cooled to 500 • C for 2 days, followed by natural cooling.The back-gated FETs were fabricated using a layer-by-layer dry transfer method in an argonfilled glove box (H 2 O < 1 ppm, O 2 < 1 ppm).First, the h-BN crystals were mechanically exfoliated using blue tape onto the polydimethylsiloxane (PDMS) and then transferred onto an oxidized silicon wafer, which was pre-processed by ultraviolet-ozone cleaning for 5 min.The silicon wafer with h-BN flakes was annealed on a hot stage in the glove box at 400 • C for 3 h.Then, two few-layer graphene flakes were transferred onto two ends of the bottom h-BN to serve as the buffer layer.The h-BN/graphene heterostructure was also annealed in the glove box at 400 • C for 3 h to remove processing residues.After that, the target InSe flakes on PDMS were aligned on the h-BN/graphene heterostructure so that the edges of the InSe flakes overlapped with the graphene layer.The h-BN/graphene/InSe heterostructure was annealed at 180 • C for 5 min.Finally, a larger h-BN flake was selected to encapsulate the heterostructure, followed by another annealing at 180 • C for 5 min.The metal electrodes of Cr/Au (10/50 nm) were patterned using a copper grid as the shadow mask and prepared by standard electron-beam evaporation (ASB-EPI-C6, Syskey Technology Co., Ltd., Hsinchu, Taiwan).The fabricated devices were annealed in an Ar atmosphere at 180 • C for 30 min to optimize the contact condition.

Characterization and Device Measurement
The topographies and thicknesses of exfoliated nanosheets (InSe, graphene, h-BN) and films of PMMA and Al 2 O 3 were identified by an optical microscope (Nikon Y-IDP) and AFM (Dimension ICON system, Bruker, Billerica, MA, USA).Raman and PL spectra of InSe nanosheets were collected by using a WITec Alpha 300R (Oxford Instruments, Abingdon, UK) confocal microscope spectrometer with an excitation laser of 532 nm.TEM sample was prepared by using the focused ion beam (FIB) system (FEI, Scios, Hopewell Township, NJ, USA).To protect the selected region from ion damage, a layer of 500 nm Pt and another layer of 2 µm Pt were successively deposited on the h-BN/InSe/h-BN heterostructure before FIB milling.The prepared cross-sectional slice was then transferred and attached to a TEM grid.TEM and EDS mapping images were performed on a JEOL JEM-3200FS operated at an accelerating voltage of 300 kV and equipped with an EDS detector.
The electrical properties of the InSe devices were measured in a probe station (Lakeshore, TTPX, Thebarton, Australia) in vacuum, using a Keithley (4200-SCS, Cleveland, OH, USA) semiconductor parameter analyzer.Photo-response was triggered by a supercontinuum whitelight laser source (SC400-8, Fianium Ltd., Southampton, UK) coupled with a monochromator.The laser intensity was measured with a commercial Thorlabs power meter.

Results and Discussion
As illustrated in Figure 1a, there are three types of interfaces involved in the InSe FET device, including the InSe/adsorbate interface, InSe/metal contact, and InSe/dielectric interface.Figure 1b shows the atomic force microscopy (AFM) image of a 20 nm thick InSe nanosheet shortly after exfoliation, showing a uniform topography.After seven days of ambient exposure, the inspection of increased small protrusions on the surface suggested structural or chemical changes in the InSe nanosheet arising from the slow but spontaneous oxidation (Figure 1c) [23].Moreover, the photoluminescent (PL) emission showed an appreciable reduction in intensity (Figure S1).Accordingly, the vdW integration method was employed to achieve pure van der Waal contacts and minimize defects and charge trapping sites by providing a high interface quality for optoelectronic devices [32].In the realm of vdW integration, artificial heterostructures composed of 2DSM, graphene, and h-BN have gained extensive attention [28,33].For the sake of simplicity, we fabricated vdW heterostructures composed of a multilayer InSe layer interlaid between thin h-BN layers using a dry alignment transfer procedure shown in Figure S2.High-resolution transmission electron microscopy (HRTEM) for the interface region was used to characterize the vdW interface region (Figure 1d).Obviously, the h-BN/InSe/h-BN stacking could produce damage-free and atomically smooth interfaces between disparate materials.The interlayer spacing was measured to be 0.334 nm and 0.833 nm, equal to the interlayer distance in h-BN and InSe, respectively.The corresponding energy-dispersive X-ray spectroscopy (EDS) element mappings in Figure 1e    Apart from the surface structure, the interface between the InSe and dielectric layer is one of the crucial factors dominating the FET device performance.To this end, we fabricated different types of back-gated field effect transistor (FET) devices based on various dielectric layers using the home-made copper grid mask method.The InSe nanosheets with a thickness range of 10-30 nm were exfoliated from bulk crystals and transferred to silicon substrates.Figure 2a illustrates the schematic view of the InSe/SiO2 FET device based on a single 300 nm thick SiO2 dielectric.The thickness of the InSe channel was 10 nm, as measured by AFM in Figure 2b.The transfer and output characteristics of InSe/SiO2 FET were carried out by applying a drain-source voltage (Vds) and gate voltage (Vg) in a three-terminal configuration.Figure 2c presents the Ids-Vg curves of the typical InSe/SiO2 FET operated at Vds = 1 V, indicating an obvious n-type behavior with a current on/off ratio of 1.3 × 10 7 .The field-effect mobility can be extracted using the equation as follows: where L and W are the channel length and width of the device; and Ci is the capacitance between the channel and the back gate per unit area: Ci = ε0εr/d, where ε0 = 8.85 × 10 −12 F m −1 and εr (3.9) and d (300 nm) are the dielectric constant and thickness of SiO2, respectively.Based on the transport curve, the electron mobility was calculated to be 31 cm 2 V −1 s −1 .The carrier scattering originating from the amorphous gate dielectric of SiO2 was primarily responsible for the low electron mobility [27,28].The output curves of the InSe/SiO2 Apart from the surface structure, the interface between the InSe and dielectric layer is one of the crucial factors dominating the FET device performance.To this end, we fabricated different types of back-gated field effect transistor (FET) devices based on various dielectric layers using the home-made copper grid mask method.The InSe nanosheets with a thickness range of 10-30 nm were exfoliated from bulk crystals and transferred to silicon substrates.Figure 2a illustrates the schematic view of the InSe/SiO 2 FET device based on a single 300 nm thick SiO 2 dielectric.The thickness of the InSe channel was 10 nm, as measured by AFM in Figure 2b.The transfer and output characteristics of InSe/SiO 2 FET were carried out by applying a drain-source voltage (V ds ) and gate voltage (V g ) in a three-terminal configuration.Figure 2c presents the I ds -V g curves of the typical InSe/SiO 2 FET operated at V ds = 1 V, indicating an obvious n-type behavior with a current on/off ratio of 1.3 × 10 7 .The field-effect mobility can be extracted using the equation as follows: where L and W are the channel length and width of the device; and C i is the capacitance between the channel and the back gate per unit area: C i = ε 0 ε r /d, where ε 0 = 8.85 × 10 −12 F m −1 and ε r (3.9) and d (300 nm) are the dielectric constant and thickness of SiO 2 , respectively.Based on the transport curve, the electron mobility was calculated to be 31 cm 2 V −1 s −1 .
The carrier scattering originating from the amorphous gate dielectric of SiO 2 was primarily responsible for the low electron mobility [27,28].The output curves of the InSe/SiO 2 FET showed that a larger positive gate voltage induced a higher current due to the n-type conduction (Figure S3).To screen the interfacial Coulomb impurities, we also fabricated an InSe FET device based on a hybrid dielectric interface, composed of 150 nm poly(methyl methacrylate) (PMMA) and 30 nm Al 2 O 3 (Figure 2d).The optical micrograph and AFM images of InSe/PMMA/Al 2 O 3 FET are shown in Figure 2e. Figure 2f presents the I ds -V g curves of the typical InSe/PMMA/Al 2 O 3 device, demonstrating an electron mobility of 511 cm 2 V −1 s −1 and on/off ratio of ~10 8 , respectively.The carrier mobility was one order of magnitude higher than that from the FET device on the SiO 2 /Si substrate.Furthermore, multilayer InSe was encapsulated with h-BN to prevent absorbed impurities and oxidations on the channel surface.Figure 2g illustrates the schematic view of the h-BN/InSe/PMMA/Al 2 O 3 FET device, with graphene serving as the buffer layer.The thickness of the InSe channel was identified to be 14 nm according to the AFM in Figure 2h.The mobility of h-BN/InSe/PMMA/Al 2 O 3 FET was further enhanced to be 761 cm 2 V −1 s −1 with an on/off ratio of 2.1 × 10 7 (Figure 2i).
Nanomaterials 2024, 14, x FOR PEER REVIEW 5 of 10 FET showed that a larger positive gate voltage induced a higher current due to the n-type conduction (Figure S3).To screen the interfacial Coulomb impurities, we also fabricated an InSe FET device based on a hybrid dielectric interface, composed of 150 nm poly(methyl methacrylate) (PMMA) and 30 nm Al2O3 (Figure 2d).The optical micrograph and AFM images of InSe/PMMA/Al2O3 FET are shown in Figure 2e. Figure 2f presents the Ids-Vg curves of the typical InSe/PMMA/Al2O3 device, demonstrating an electron mobility of 511 cm 2 V −1 s −1 and on/off ratio of ~10 8 , respectively.The carrier mobility was one order of magnitude higher than that from the FET device on the SiO2/Si substrate.Furthermore, multilayer InSe was encapsulated with h-BN to prevent absorbed impurities and oxidations on the channel surface.Figure 2g illustrates the schematic view of the h-BN/InSe/PMMA/Al2O3 FET device, with graphene serving as the buffer layer.The thickness of the InSe channel was identified to be 14 nm according to the AFM in Figure 2h.The mobility of h-BN/InSe/PMMA/Al2O3 FET was further enhanced to be 761 cm 2 V −1 s −1 with an on/off ratio of 2.1 × 10 7 (Figure 2i).Recently, h-BN has been widely explored to optimize interface properties and electrical performance because of its high single crystallinity and vdW surfaces.A root-meansquare surface roughness of 0.19 nm was measured for the cleaved h-BN (Figure S4), which was almost the same as for the defect-free polymer of PMMA (0.29 nm).Hence, h-BN was further employed as both a gate dielectric and passivation layer to fabricate InSe FET devices using the vdW integration process.In addition, graphene nanosheets were used as a buffer layer to create a high-quality electrical contact and alleviate the damage Recently, h-BN has been widely explored to optimize interface properties and electrical performance because of its high single crystallinity and vdW surfaces.A root-mean-square surface roughness of 0.19 nm was measured for the cleaved h-BN (Figure S4), which was almost the same as for the defect-free polymer of PMMA (0.29 nm).Hence, h-BN was further employed as both a gate dielectric and passivation layer to fabricate InSe FET devices using the vdW integration process.In addition, graphene nanosheets were used as a buffer layer to create a high-quality electrical contact and alleviate the damage of the InSe channel during the metal deposition process [34].Details of the device fabrication process were described in the Materials and Methods section and Figure S5. Figure 3a,b display the schematic view of h-BN/InSe/h-BN/SiO 2 FET and optical images of a typical device, respectively.The thickness of the InSe channel was determined to be 23 nm by AFM measurement (Figures 3c and S6).Note that the channel was fully covered by a top h-BN layer, as marked by the light blue dotted line.Figure 3d shows the I ds -V ds curves for back gate voltages ranging from −60 to +60 V, indicating the good contact between the Cr/Au electrodes and InSe channel.The satisfactory performance should be attributed to the formation of a vdW contact with the insertion of an atomically flat graphene layer, which is efficient in preventing metal diffusion from electrodes to the channel and eliminating the metal-induced gap state [10].Accordingly, the FLP effect between the InSe and Au electrode was alleviated, and an enhanced carrier mobility could be expected.Figure 3e shows the transfer curves of the h-BN/InSe/h-BN/SiO 2 FET, resulting in a high electron mobility of 1078 cm 2 V −1 s −1 and an on/off ratio of 7.1 × 10 7 at room temperature.This mobility value was equivalent to the previous results from the top-or bottom-gated FET devices reported for multilayer InSe, which were optimized by interface engineering methods, including encapsulation, modifying the contact metal or dielectric layer, and surface charge doping [21,28,30].The hysteresis behavior in the vdW-integrated InSe was also revealed.As shown in Figure S7, the device exhibited a diminutive hysteresis loop due to the decrease of interfacial trap densities, consistent with a previous study [12].The carrier density (n) was calculated to be 2.5 × 10 12 cm −2 according to the following equation [35], where q is the elemental charge: of the InSe channel during the metal deposition process [34].Details of the device fabrication process were described in the Materials and Methods section and Figure S5. Figure 3a,b display the schematic view of h-BN/InSe/h-BN/SiO2 FET and optical images of a typical device, respectively.The thickness of the InSe channel was determined to be 23 nm by AFM measurement (Figures 3c and S6).Note that the channel was fully covered by a top h-BN layer, as marked by the light blue dotted line.Figure 3d shows the Ids-Vds curves for back gate voltages ranging from −60 to +60 V, indicating the good contact between the Cr/Au electrodes and InSe channel.The satisfactory performance should be attributed to the formation of a vdW contact with the insertion of an atomically flat graphene layer, which is efficient in preventing metal diffusion from electrodes to the channel and eliminating the metal-induced gap state [10].Accordingly, the FLP effect between the InSe and Au electrode was alleviated, and an enhanced carrier mobility could be expected.Figure 3e shows the transfer curves of the h-BN/InSe/h-BN/SiO2 FET, resulting in a high electron mobility of 1078 cm 2 V −1 s −1 and an on/off ratio of 7.1 × 10 7 at room temperature.This mobility value was equivalent to the previous results from the top-or bottom-gated FET devices reported for multilayer InSe, which were optimized by interface engineering methods, including encapsulation, modifying the contact metal or dielectric layer, and surface charge doping [21,28,30].The hysteresis behavior in the vdW-integrated InSe was also revealed.As shown in Figure S7, the device exhibited a diminutive hysteresis loop due to the decrease of interfacial trap densities, consistent with a previous study [12].The carrier density (n) was calculated to be 2.5 × 10 12 cm −2 according to the following equation [35], where q is the elemental charge: Moreover, Figures 3f and S8 summarized the distribution of electron mobility (μ) for four types of multilayer InSe FET devices fabricated in different batches, as marked by square, circle, triangle, and star, respectively.Overall, the vdW-integrated InSe FETs exhibited a substantial improvement in carrier mobility compared to the case involving an InSe channel placed directly on the SiO2/Si substrate and also devices without encapsulation.Furthermore, the mobility of vdW-integrated devices was competitive with that of devices based on a PMMA dielectric layer, suggesting the effective screening of carrier scattering by h-BN.In order to see environmental stability, the evolution of the electrical Moreover, Figures 3f and S8 summarized the distribution of electron mobility (µ) for four types of multilayer InSe FET devices fabricated in different batches, as marked by square, circle, triangle, and star, respectively.Overall, the vdW-integrated InSe FETs exhibited a substantial improvement in carrier mobility compared to the case involving an InSe channel placed directly on the SiO 2 /Si substrate and also devices without encapsulation.Furthermore, the mobility of vdW-integrated devices was competitive with that of devices based on a PMMA dielectric layer, suggesting the effective screening of carrier scattering by h-BN.In order to see environmental stability, the evolution of the electrical properties of the devices was further measured.It turned out that the vdW-integrated devices could maintain a stable carrier mobility and current on/off ratio when they were stored under ambient conditions for one month (Figure S9).These experimental results indicate that the clean interface of the 2DSM/dielectric and the h-BN-passivated surface of the 2DSM channel contribute to the preservation of charge transport.
Furthermore, the photoresponse performance of the vdW-integrated InSe transistors was investigated.Under illumination of a 532 nm laser, the InSe device showed linear source-drain current-voltage (I ds − V ds ) curves (Figure S10), indicating good electrical contact between the channel and metal electrodes.Furthermore, the photocurrent (I ph ), defined as the difference between the device current measured under laser light illumination (I light ) and that measured in the dark (I dark ), increased monotonically when increasing the laser power density (P) of the incident laser light, as displayed in Figure 4a,b.To evaluate the photodetector performance, the photoresponsivity (R) and external quantum efficiency (EQE) were calculated according to the following equations: where S is the effective area of the device, h is the Planck constant, and c is the speed of light.Figure 4c plots the value of photoresponsivity under different power densities.When the photodetector operated at V ds = 0.1 V and V g = 0 V, a maximum photoresponsivity of 1.7 × 10 4 A W −1 was obtained at a low power density of 7.2 × 10 −4 mW cm −2 .Meanwhile, EQE showed a similar trend to photoresponsivity when the power densities increased, resulting in a maximum value of 3.9 × 10 6 % at P = 7.2 × 10 −4 mW cm −2 .Figure 4d shows the wavelength-dependent photoresponsivity of the InSe device measured at a fixed laser power density of 2.5 mW cm −2 (V ds = 0.1 V, V g = 0 V).When the photo energy was larger than the band gap (1.26 eV) of multilayer InSe, abundant electron-hole pairs would be excited and subsequently separated by the bias voltage, leading to an efficient photoresponse in the wavelength range of 400-950 nm.When the wavelength increased towards 1100 nm, the devices exhibited an obvious decrease in photoresponsivity due to the forbidden interband absorption, in agreement with a previous study [36].
properties of the devices was further measured.It turned out that the vdW-integrated devices could maintain a stable carrier mobility and current on/off ratio when they were stored under ambient conditions for one month (Figure S9).These experimental results indicate that the clean interface of the 2DSM/dielectric and the h-BN-passivated surface of the 2DSM channel contribute to the preservation of charge transport.Furthermore, the photoresponse performance of the vdW-integrated InSe transistors was investigated.Under illumination of a 532 nm laser, the InSe device showed linear source-drain current-voltage (Ids − Vds) curves (Figure S10), indicating good electrical contact between the channel and metal electrodes.Furthermore, the photocurrent (Iph), defined as the difference between the device current measured under laser light illumination (Ilight) and that measured in the dark (Idark), increased monotonically when increasing the laser power density (P) of the incident laser light, as displayed in Figure 4a,b.To evaluate the photodetector performance, the photoresponsivity (R) and external quantum efficiency (EQE) were calculated according to the following equations: R = Iph/(PS) (3) where S is the effective area of the device, h is the Planck constant, and c is the speed of light.Figure 4c plots the value of photoresponsivity under different power densities.
When the photodetector operated at Vds = 0.1 V and Vg = 0 V, a maximum photoresponsivity of 1.7 × 10 4 A W −1 was obtained at a low power density of 7.2 × 10 −4 mW cm −2 .Meanwhile, EQE showed a similar trend to photoresponsivity when the power densities increased, resulting in a maximum value of 3.9 × 10 6 % at P = 7.2 × 10 −4 mW cm −2 .Figure 4d shows the wavelength-dependent photoresponsivity of the InSe device measured at a fixed laser power density of 2.5 mW cm −2 (Vds = 0.1 V, Vg = 0 V).When the photo energy was larger than the band gap (1.26 eV) of multilayer InSe, abundant electron-hole pairs would be excited and subsequently separated by the bias voltage, leading to an efficient photoresponse in the wavelength range of 400-950 nm.When the wavelength increased towards 1100 nm, the devices exhibited an obvious decrease in photoresponsivity due to the forbidden interband absorption, in agreement with a previous study [36].
distinctly presented the individual components of the h-BN/InSe/h-BN heterostructure, including the deposited Pt layer, InSe layer, and top and bottom h-BN layers.
spectroscopy (EDS) element mappings in Figure1edistinctly presented the individual components of the h-BN/InSe/h-BN heterostructure, including the deposited Pt layer, InSe layer, and top and bottom h-BN layers.

Figure 1 .
Figure 1.(a) Schematic of the three types of interfaces in the InSe FET device, including InSe/adsorbate, InSe/metal contact, and InSe/dielectric interfaces, as highlighted by the dotted boxes.(b) AFM image of a fresh InSe nanosheet prepared by mechanical cleavage.(c) AFM image of the InSe nanosheet after seven days of ambient exposure.(d) Cross-sectional HRTEM image of h-BN/InSe/h-BN vdW heterostructure, showing good interface quality.(e) EDS element mappings of the h-BN/InSe/h-BN heterostructure.

Figure 1 .
Figure 1.(a) Schematic of the three types of interfaces in the InSe FET device, including InSe/adsorbate, InSe/metal contact, and InSe/dielectric interfaces, as highlighted by the dotted boxes.(b) AFM image of a fresh InSe nanosheet prepared by mechanical cleavage.(c) AFM image of the InSe nanosheet after seven days of ambient exposure.(d) Cross-sectional HRTEM image of h-BN/InSe/h-BN vdW heterostructure, showing good interface quality.(e) EDS element mappings of the h-BN/InSe/h-BN heterostructure.

Figure 2 .
Figure 2. (a,b) Schematic view and AFM image of the InSe FET based on bare SiO2 dielectric.Inset shows the corresponding optical image of the device.(c) Transfer characteristics of the device at Vds = 1 V at linear (red line) and logarithmic (blue line) scales.(d,e) Schematic view and AFM image of the InSe FET based on PMMA/Al2O3 dielectric without encapsulation.(f) Transfer characteristics of the device at Vds = 1 V at linear (red line) and logarithmic (blue line) scales.(g,h) Schematic view and AFM image of the h-BN-encapsulated InSe FET based on PMMA/Al2O3 dielectric.(i) Transfer characteristics of the device at Vds = 1 V at linear (red line) and logarithmic (blue line) scales.

Figure 2 .
Figure 2. (a,b) Schematic view and AFM image of the InSe FET based on bare SiO 2 dielectric.Inset shows the corresponding optical image of the device.(c) Transfer characteristics of the device at V ds = 1 V at linear (red line) and logarithmic (blue line) scales.(d,e) Schematic view and AFM image of the InSe FET based on PMMA/Al 2 O 3 dielectric without encapsulation.(f) Transfer characteristics of the device at V ds = 1 V at linear (red line) and logarithmic (blue line) scales.(g,h) Schematic view and AFM image of the h-BN-encapsulated InSe FET based on PMMA/Al 2 O 3 dielectric.(i) Transfer characteristics of the device at V ds = 1 V at linear (red line) and logarithmic (blue line) scales.

Figure 3 .
Figure 3. (a) Schematic view of the h-BN-encapsulated InSe FET based on h-BN/SiO2 dielectric.(b,c) Optical image and the corresponding AFM image of the vdW-integrated h-BN/InSe/h-BN/SiO2 FET device.(d) Output characteristics of the device at different Vg.(e) Transfer characteristics of the device at Vds = 0.1 V at linear (red line) and logarithmic (blue line) scales.(f) The distribution of electron mobility for InSe devices with different configurations.

Figure 3 .
Figure 3. (a) Schematic view of the h-BN-encapsulated InSe FET based on h-BN/SiO 2 dielectric.(b,c) Optical image and the corresponding AFM image of the vdW-integrated h-BN/InSe/h-BN/SiO 2 FET device.(d) Output characteristics of the device at different V g .(e) Transfer characteristics of the device at V ds = 0.1 V at linear (red line) and logarithmic (blue line) scales.(f) The distribution of electron mobility for InSe devices with different configurations.

Figure 4 .
Figure 4. (a) Iph − Vds curves of the vdW-integrated InSe device under different 532 nm laser power densities.(b) Dependence of the photocurrent on the power density at Vds = 0.1 V. (c) Dependence

Figure 4 .
Figure 4. (a) I ph − V ds curves of the vdW-integrated InSe device under different 532 nm laser power densities.(b) Dependence of the photocurrent on the power density at V ds = 0.1 V. (c) Dependence of the photoresponsivity and EQE on the power density.(d) Wavelength-dependent photoresponsivity under incident light illumination with a fixed power density of 2.5 mW cm −2 .