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Article

III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy

National Renewable Energy Laboratory, Golden, CO 80401, USA
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Crystals 2019, 9(1), 3; https://doi.org/10.3390/cryst9010003
Received: 27 September 2018 / Revised: 10 December 2018 / Accepted: 14 December 2018 / Published: 20 December 2018
(This article belongs to the Special Issue Hydride Vapor Phase Epitaxy Growth of Crystals)
Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to applications in high-value or niche markets, due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis, using a hydride vapor phase epitaxy process that has the potential to lower III-V semiconductor deposition costs, while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. We demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market. View Full-Text
Keywords: HVPE; III-V semiconductors HVPE; III-V semiconductors
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MDPI and ACS Style

Simon, J.; Schulte, K.L.; Horowitz, K.A.W.; Remo, T.; Young, D.L.; Ptak, A.J. III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy. Crystals 2019, 9, 3. https://doi.org/10.3390/cryst9010003

AMA Style

Simon J, Schulte KL, Horowitz KAW, Remo T, Young DL, Ptak AJ. III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy. Crystals. 2019; 9(1):3. https://doi.org/10.3390/cryst9010003

Chicago/Turabian Style

Simon, John; Schulte, Kevin L.; Horowitz, Kelsey A.W.; Remo, Timothy; Young, David L.; Ptak, Aaron J. 2019. "III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy" Crystals 9, no. 1: 3. https://doi.org/10.3390/cryst9010003

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