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Open AccessArticle

III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy

National Renewable Energy Laboratory, Golden, CO 80401, USA
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Crystals 2019, 9(1), 3; https://doi.org/10.3390/cryst9010003
Received: 27 September 2018 / Revised: 10 December 2018 / Accepted: 14 December 2018 / Published: 20 December 2018
(This article belongs to the Special Issue Hydride Vapor Phase Epitaxy Growth of Crystals)
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Abstract

Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to applications in high-value or niche markets, due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis, using a hydride vapor phase epitaxy process that has the potential to lower III-V semiconductor deposition costs, while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. We demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market. View Full-Text
Keywords: HVPE; III-V semiconductors HVPE; III-V semiconductors
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Simon, J.; Schulte, K.L.; Horowitz, K.A.W.; Remo, T.; Young, D.L.; Ptak, A.J. III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy. Crystals 2019, 9, 3.

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