Next Article in Journal
Effect of Pressure on the Superconducting Properties of Tl2Ba2Ca2Cu3O9-δ
Next Article in Special Issue
Thick Hydride Vapor Phase Heteroepitaxy: A Novel Approach to Growth of Nonlinear Optical Materials
Previous Article in Journal
LiCrO2 Under Pressure: In-Situ Structural and Vibrational Studies
Open AccessArticle

III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy

National Renewable Energy Laboratory, Golden, CO 80401, USA
Author to whom correspondence should be addressed.
Crystals 2019, 9(1), 3;
Received: 27 September 2018 / Revised: 10 December 2018 / Accepted: 14 December 2018 / Published: 20 December 2018
(This article belongs to the Special Issue Hydride Vapor Phase Epitaxy Growth of Crystals)
PDF [3558 KB, uploaded 20 December 2018]


Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to applications in high-value or niche markets, due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis, using a hydride vapor phase epitaxy process that has the potential to lower III-V semiconductor deposition costs, while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. We demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market. View Full-Text
Keywords: HVPE; III-V semiconductors HVPE; III-V semiconductors

Graphical abstract

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

Share & Cite This Article

MDPI and ACS Style

Simon, J.; Schulte, K.L.; Horowitz, K.A.W.; Remo, T.; Young, D.L.; Ptak, A.J. III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy. Crystals 2019, 9, 3.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Crystals EISSN 2073-4352 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top