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Journal: MicromachinesVolume: 15Number: 1499
Article: Enhancing Resistive Switching in AlN-Based Memristors Through Oxidative Al2O3 Layer Formation: A Study on Preparation Techniques and Performance Impact
- Authors:
- Hongxuan Guo1,*,
- Jiahao Yao1 and
- Siyuan Chen1
- et al.
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