Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review
Department of Physics and Engineering Physics, Morgan State University, Baltimore, MD 21251, USA
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
Materials Science Measurement Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
Department of Civil Engineering, Morgan State University, Baltimore, MD 21251, USA
Author to whom correspondence should be addressed.
Academic Editor: Massimo Mastrangeli
Received: 6 April 2016 / Revised: 23 June 2016 / Accepted: 12 July 2016 / Published: 23 August 2016
Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of
. GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent optical properties, playing main roles in future lighting to reduce energy cost and sensors to resist radiations. GaN nanomaterials inherit bulk properties of the compound while possess novel photoelectric properties of nanomaterials. The review focuses on self-assemblies of GaN nanoparticles without templates, growth mechanisms of self-assemblies, and potential applications of the assembled nanostructures on renewable energy.
This is an open access article distributed under the Creative Commons Attribution License
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MDPI and ACS Style
Lan, Y.; Li, J.; Wong-Ng, W.; Derbeshi, R.M.; Li, J.; Lisfi, A. Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review. Micromachines 2016, 7, 121.
Lan Y, Li J, Wong-Ng W, Derbeshi RM, Li J, Lisfi A. Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review. Micromachines. 2016; 7(9):121.
Lan, Yucheng; Li, Jianye; Wong-Ng, Winnie; Derbeshi, Rola M.; Li, Jiang; Lisfi, Abdellah. 2016. "Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review." Micromachines 7, no. 9: 121.
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