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Journal: Micromachines, 2026
Volume: 17
Number: 642
Article:
A Backside-Electrode-Free Lateral 4H-SiC JFET with Three-Terminal Dual-Gate Design for Stable DC Operation at 500 °C
Authors:
by
Yuting Tang, Qian Luo, Jiang Zhu, Hezhi Zhang, Yuchun Chang and Hongwei Liang
Link:
https://www.mdpi.com/2072-666X/17/6/642
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