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Journal: Micromachines, 2026
Volume: 17
Number: 305

Article: Optimization and Simulation on Gas Flow and Temperature Fields on the Homoepitaxial Growth of N-Doped 4H-SiC Wafers
Authors: by Guoliang Zhang, Tiantian Li, Yingbin Liu, Jinfeng Sun and Shaofei Zhang
Link: https://www.mdpi.com/2072-666X/17/3/305

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