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Journal: Micromachines, 2026
Volume: 17
Number: 305
Article:
Optimization and Simulation on Gas Flow and Temperature Fields on the Homoepitaxial Growth of N-Doped 4H-SiC Wafers
Authors:
by
Guoliang Zhang, Tiantian Li, Yingbin Liu, Jinfeng Sun and Shaofei Zhang
Link:
https://www.mdpi.com/2072-666X/17/3/305
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