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AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC H3A 0E9, Canada
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Micromachines 2020, 11(2), 125; https://doi.org/10.3390/mi11020125
Received: 21 December 2019 / Revised: 19 January 2020 / Accepted: 22 January 2020 / Published: 23 January 2020
(This article belongs to the Special Issue Nanostructured Light-Emitters)
In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN) nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such LED devices are mainly grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); and various foreign substrates/templates have been investigated. Devices on Si so far exhibit the best performance, whereas devices on metal and graphene have also been investigated to mitigate various limitations of Si substrate, e.g., the UV light absorption. Moreover, patterned growth techniques have also been developed to grow AlGaN nanowire UV LED structures, in order to address issues with the spontaneously formed nanowires. Furthermore, to reduce the quantum confined Stark effect (QCSE), nonpolar AlGaN nanowire UV LEDs exploiting the nonpolar nanowire sidewalls have been demonstrated. With these recent developments, the prospects, together with the general challenges of AlGaN nanowire UV LEDs, are discussed in the end.
Keywords: compound semiconductor; nanostructure; ultraviolet; light-emitting diode (LED); molecular beam epitaxy; GaN; AlN compound semiconductor; nanostructure; ultraviolet; light-emitting diode (LED); molecular beam epitaxy; GaN; AlN
MDPI and ACS Style

Zhao, S.; Lu, J.; Hai, X.; Yin, X. AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects. Micromachines 2020, 11, 125.

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