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Article

Miniature Switchable Millimeter-Wave BiCMOS Low-Noise Amplifier at 120/140 GHz Using an HBT Switch

1
Universitat Politècnica de Catalunya, Campus Nord UPC mòdul D3, 08034 Barcelona, Catalonia, Spain
2
La Salle—Universitat Ramon Llull, 08022 Barcelona, Catalonia, Spain
3
IHP—Leibniz-Institut für innovative Mikroelektronik, 15236 Frankfurt (Oder), Germany
*
Author to whom correspondence should be addressed.
Micromachines 2019, 10(10), 632; https://doi.org/10.3390/mi10100632
Received: 24 July 2019 / Revised: 9 September 2019 / Accepted: 20 September 2019 / Published: 21 September 2019
(This article belongs to the Special Issue Nanodevices for Microwave and Millimeter Wave Applications)
A 120–140 GHz frequency-switchable, very compact low-noise amplifier (LNA) fabricated in a 0.13 µm SiGe:C BiCMOS technology is proposed. A single radio-frequency (RF) switch composed of three parallel hetero junction bipolar transistors (HBTs) in a common-collector configuration and a multimodal three-line microstrip structure in the input matching network are used to obtain a LNA chip of miniaturized size. A systematic design procedure is applied to obtain a perfectly balanced gain and noise figure in both frequency states (120 GHz and 140 GHz). The measured gain and noise figure are 14.2/14.2 dB and 8.2/8.2 dB at 120/140 GHz respectively, in very good agreement with circuit/electromagnetic co-simulations. The LNA chip and core areas are 0.197 mm2 and 0.091 mm2, respectively, which supposes an area reduction of 23.4% and 15.2% compared to other LNAs reported in this frequency band. The experimental results validate the design procedure and its analysis. View Full-Text
Keywords: low-noise amplifier (LNA); frequency-reconfigurable LNA; multimodal circuit; SiGe BiCMOS; hetero junction bipolar transistor (HBT); RF switch low-noise amplifier (LNA); frequency-reconfigurable LNA; multimodal circuit; SiGe BiCMOS; hetero junction bipolar transistor (HBT); RF switch
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MDPI and ACS Style

Heredia, J.; Ribó, M.; Pradell, L.; Wipf, S.T.; Göritz, A.; Wietstruck, M.; Wipf, C.; Kaynak, M. Miniature Switchable Millimeter-Wave BiCMOS Low-Noise Amplifier at 120/140 GHz Using an HBT Switch. Micromachines 2019, 10, 632. https://doi.org/10.3390/mi10100632

AMA Style

Heredia J, Ribó M, Pradell L, Wipf ST, Göritz A, Wietstruck M, Wipf C, Kaynak M. Miniature Switchable Millimeter-Wave BiCMOS Low-Noise Amplifier at 120/140 GHz Using an HBT Switch. Micromachines. 2019; 10(10):632. https://doi.org/10.3390/mi10100632

Chicago/Turabian Style

Heredia, Julio; Ribó, Miquel; Pradell, Lluís; Wipf, Selin T.; Göritz, Alexander; Wietstruck, Matthias; Wipf, Christian; Kaynak, Mehmet. 2019. "Miniature Switchable Millimeter-Wave BiCMOS Low-Noise Amplifier at 120/140 GHz Using an HBT Switch" Micromachines 10, no. 10: 632. https://doi.org/10.3390/mi10100632

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