Next Article in Journal
Jood, P. and Ohta, M. Hierarchical Architecturing for Layered Thermoelectric Sulfides and Chalcogenides. Materials 2015, 8, 1124–1149
Previous Article in Journal
Electrochemical Behavior of Al-B4C Metal Matrix Composites in NaCl Solution
Open AccessArticle

Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

1
Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan
2
Materials & Electro-Optics Research Division, Chung-Shan Institute of Science and Technology, Lung Tan 32599, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editor: Giorgio Biasiol
Materials 2015, 8(9), 6471-6481; https://doi.org/10.3390/ma8095316
Received: 3 July 2015 / Revised: 15 August 2015 / Accepted: 10 September 2015 / Published: 21 September 2015
(This article belongs to the Section Structure Analysis and Characterization)
: In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 104 Ω/cm), carrier concentration (4.1 × 1021 cm3), carrier mobility (10 cm2/Vs), and mean visible-light transmittance (90%) at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm3) with a high figure of merit (81.1 × 1031) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices. View Full-Text
Keywords: oxide-related compound; indium tin oxide (ITO); magnetron sputtering; transparent conducting oxide (TCO) oxide-related compound; indium tin oxide (ITO); magnetron sputtering; transparent conducting oxide (TCO)
Show Figures

Figure 1

MDPI and ACS Style

Pu, N.-W.; Liu, W.-S.; Cheng, H.-M.; Hu, H.-C.; Hsieh, W.-T.; Yu, H.-W.; Liang, S.-C. Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film. Materials 2015, 8, 6471-6481.

Show more citation formats Show less citations formats

Article Access Map by Country/Region

1
Only visits after 24 November 2015 are recorded.
Back to TopTop