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Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel

1
Department of Electronic Engineering, National United University, Miaoli 36003, Taiwan
2
Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 30010, Taiwan
3
National Nano Device Laboratories, Hsinchu 30010, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editor: Jung Ho Je
Materials 2015, 8(11), 7519-7523; https://doi.org/10.3390/ma8115403
Received: 10 September 2015 / Revised: 27 October 2015 / Accepted: 5 November 2015 / Published: 10 November 2015
(This article belongs to the Section Structure Analysis and Characterization)
In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si0.57Ge0.43/Si) through microwave annealing (MWA) ranging from 200 to 470 °C for 150 s in N2 ambient. MWA has the advantage of being diffusion-less during activation, having a low-temperature process, have a lower junction leakage current, and having low sheet resistance (Rs) and contact resistivity. In our study, a 20 nm NiSiGe Schottky junction was formed by TEM and XRD analysis at MWA 390 °C. The NiSiGe/n-Si Schottky junction exhibits the highest forward/reverse current (ION/IOFF) ratio of ~3 × 105. The low temperature MWA is a very promising thermal process technology for NiSiGe Schottky junction manufacturing. View Full-Text
Keywords: germanium; microwave annealing; NiSiGe; Schottky junction germanium; microwave annealing; NiSiGe; Schottky junction
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Lin, Y.-H.; Tsai, Y.-H.; Hsu, C.-C.; Luo, G.-L.; Lee, Y.-J.; Chien, C.-H. Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel. Materials 2015, 8, 7519-7523.

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