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Materials 2012, 5(5), 889-908;

Strained Silicon Photonics

Centre for Innovation Competence SiLi-nano, Martin-Luther-University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3, Halle (Saale) 06120, Germany
Fraunhofer Institute for Mechanics of Materials, Walter-Hülse-Str. 1, Halle (Saale) 06120, Germany
Institute of Physics, Martin-Luther-University Halle-Wittenberg, Heinrich-Damerow-Str. 4, Halle (Saale) 06120, Germany
Author to whom correspondence should be addressed.
Received: 22 March 2012 / Revised: 9 May 2012 / Accepted: 9 May 2012 / Published: 22 May 2012
(This article belongs to the Special Issue Photonic Materials and Applications)
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A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, the relation between strain and the enhancement of the second order nonlinear susceptibility is investigated, which may enable the construction of optically active photonic devices made of silicon. View Full-Text
Keywords: silicon photonics; strain engineering; nonlinear optical properties silicon photonics; strain engineering; nonlinear optical properties

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MDPI and ACS Style

Schriever, C.; Bohley, C.; Schilling, J.; Wehrspohn, R.B. Strained Silicon Photonics. Materials 2012, 5, 889-908.

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