Strained Silicon Photonics
1
Centre for Innovation Competence SiLi-nano, Martin-Luther-University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3, Halle (Saale) 06120, Germany
2
Fraunhofer Institute for Mechanics of Materials, Walter-Hülse-Str. 1, Halle (Saale) 06120, Germany
3
Institute of Physics, Martin-Luther-University Halle-Wittenberg, Heinrich-Damerow-Str. 4, Halle (Saale) 06120, Germany
*
Author to whom correspondence should be addressed.
Materials 2012, 5(5), 889-908; https://doi.org/10.3390/ma5050889
Received: 22 March 2012
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Revised: 9 May 2012
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Accepted: 9 May 2012
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Published: 22 May 2012
(This article belongs to the Special Issue Photonic Materials and Applications)
A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, the relation between strain and the enhancement of the second order nonlinear susceptibility is investigated, which may enable the construction of optically active photonic devices made of silicon.
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MDPI and ACS Style
Schriever, C.; Bohley, C.; Schilling, J.; Wehrspohn, R.B. Strained Silicon Photonics. Materials 2012, 5, 889-908. https://doi.org/10.3390/ma5050889
AMA Style
Schriever C, Bohley C, Schilling J, Wehrspohn RB. Strained Silicon Photonics. Materials. 2012; 5(5):889-908. https://doi.org/10.3390/ma5050889
Chicago/Turabian StyleSchriever, Clemens, Christian Bohley, Jörg Schilling, and Ralf B. Wehrspohn. 2012. "Strained Silicon Photonics" Materials 5, no. 5: 889-908. https://doi.org/10.3390/ma5050889
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