Enhancing the Thermoelectric Performance of GeSb4Te7 Compounds via Alloying Se

Ge-Sb-Te compounds (GST), the well-known phase-change materials, are considered to be promising thermoelectric (TE) materials due to their decent thermoelectric performance. While Ge2Sb2Te5 and GeSb2Te4 have been extensively studied, the TE performance of GeSb4Te7 has not been well explored. Reducing the excessive carrier concentration is crucial to improving TE performance for GeSb4Te7. In this work, we synthesize a series of Se-alloyed GeSb4Te7 compounds and systematically investigate their structures and transport properties. Raman analysis reveals that Se alloying introduces a new vibrational mode of GeSe2, enhancing the interatomic interaction forces within the layers and leading to the reduction of carrier concentration. Additionally, Se alloying also increases the effective mass and thus improves the Seebeck coefficient of GeSb4Te7. The decrease in carrier concentration reduces the carrier thermal conductivity, depressing the total thermal conductivity. Finally, a maximum zT value of 0.77 and an average zT value of 0.48 (300–750 K) have been obtained in GeSb4Te5.5Se1.5. This work investigates the Raman vibration modes and the TE performance in Se-alloyed GeSb4Te7 sheddinglight on the performance optimization of other GST materials.


Introduction
Thermoelectric (TE) materials enable the direct interconversion of heat and electricity, which is extensively applied in the field of energy harvesting and device cooling [1][2][3][4]. The heat-electricity energy conversion efficiency is related to the dimensionless figure of merit zT (zT = S 2 σ/κ) of TE material, where T is the absolute temperature, S is the Seebeck coefficient, σ is the electrical conductivity, and κ is the thermal conductivity consisting of the lattice thermal conductivity (κ L ) and carrier thermal conductivity (κ c ) [5][6][7]. An ideal thermoelectric material should possess high S and large σ, combined with poor κ [8][9][10][11]. However, these electrical and thermal transport parameters are coupled with each other, so it is difficult to improve zT for optimizing them simultaneously. Therefore, a lot of research strategies for decoupling these parameters have been proposed to achieve high zT of TE materials [3,[9][10][11][12].
As the pseudo-binary alloys of IV-VI and V 2 -VI 3 tellurides, Ge-Sb-Te compounds (GSTs) have been widely used in rewritable storage techniques and are receiving more and more attention as TE materials. Metastable cubic and stable hexagonal phases are the two most common crystalline phases of GSTs. Due to their narrow band gap, excellent electrical conductivity, and low lattice thermal conductivity, stable hexagonal phase GSTs are the promising TE candidates, which exhibit anisotropic thermoelectric properties because of their layered structure [13]. In the previous works, Ge 2 Sb 2 Te 5 and GeSb 2 Te 4 have been widely studied and optimized to achieve excellent TE performance. By introducing 2 of 10 resonance energy levels through In-doping, Hu et al. increased the effective mass of Ge 2 Sb 2 Te 5 and obtained a maximum zT value of 0.78 at 700 K [14]. Moreover, the electrical properties of Ge 2 Sb 2 Te 5 can also be successfully improved by modulation at the anion site [15,16]. For the GeSb 2 Te 4 single crystal, In-doping also introduces an impurity band and results in the locally distorted density of states, which contributes to the enhanced Seebeck coefficient and improved power factor [17,18]. In the GST materials family, GeSb 4 Te 7 gains less attention than Ge 2 Sb 2 Te 5 and GeSb 2 Te 4 in view of its poor intrinsic TE performance. GeSb 4 Te 7 is a strongly degenerate p-type semiconductor and possesses an excessively high hole carrier concentration, limiting the improvement of TE performance. Our previous study focused on GeSb 4 Te 7 and successfully decreased the carrier concentration via alloying the n-type homologous counterpart GeBi 4 Te 7 [19]. However, the carrier concentration of GeSb 4 Te 7 has not been adjusted to the optimal range, and its TE performance can be further improved.
In this study, we synthesized polycrystalline GeSb 4 Te 7−x Se x through melting and SPS sintering and investigated the Raman vibration modes using both experimental and calculated Raman data. Our findings provide new insights into the vibrational modes of GeSb 4 Te 7 , including the discovery of a new vibrational mode introduced by Se alloying. This leads to the reduced carrier concentration and improved TE performance of GeSb 4 Te 7 . A peak zT of 0.77 at 750 K and an average zT of 0.48 between 300 and 750 K have been realized in GeSb 4 Te 5.5 Se 1.5 , which is 54% higher than that of the pristine GeSb 4 Te 7 . This study shows that the modified vibrational modes may provide a powerful strategy to optimize TE performance, making GST compounds to be promising TE materials.

Material Synthesis
GeSb 4 Te 7−x Se x (x = 0, 0.1, 0.2, 0.3, 0.5, 0.8, 1.5, 2.0, and 2.5) samples were synthesized by the melting-annealing method. Raw materials with high purity, including Ge Shots, Sb Shots, Te Shots, and Se Shots (99.999%, Alfa Aesar), were weighed as designed chemical ratios and sealed in the vacuum quartz tubes. The tubes were heated to 1273 K and kept for 12 h. Next, they were quenched in ice water and annealed at 773 K for 3 days. Finally, the obtained ingots were ground into fine powders and consolidated using spark plasma sintering (SPS, Dr Sinter SPS-2040, Fuji Electronic Industrial Co., Ltd, Saitama, Japan) at 673-723 K for 5 min under a uniaxial pressure of 50 MPa. Pellets with a diameter of 10 mm were obtained, and their densities were higher than 98% of the theoretical density.

Calculation
The calculations were performed employing the projector augmented wave (PAW) method [20] combined with the generalized gradient approximation (GGA) [21] of the modified Perdew-Burke-Ernzerhof form for solids (PBEsol) [22] and the Vienna Ab initio Simulation Package (VASP) [23]. The crystal structure of GeSb 4 Te 7 was obtained from the ICSD database (No. 42875). The space group is P3m1 and the lattice parameters are a = 4.21000(2) (Å) and c = 23.65000(80) (Å). The crystal structure was fully optimized with a 12 × 12 × 2 Monkhorst-Pack k mesh and a force convergence criterion of 1 meV Å −1 . The phonon vibrational frequencies at the Γ point were calculated in supercells with 300 atoms (5 × 5 × 1 primitive cells) using the finite displacement method [24], which was implemented by combing VASP and Phonopy [25]. The atomic force calculations were conducted with a 2 × 2 × 2 Γ-centered k-mesh. All calculations were achieved with a plane-wave cutoff energy of 500 eV. A convergence criterion of 1 × 10 −6 eV was adopted for the electronic loop.

Material Characterization
X-ray diffraction with Cu Kα radiation (XRD, D/max 2550 V, Rigaku, Tokyo, Japan) was performed to determine the crystal structures. Scanning electron microscopy (SEM, ZEISS supra55, Munich, Germany) equipped with EDS was employed to characterize the Materials 2023, 16, 3368 3 of 10 chemical components. The Raman spectrum of the GeSb 4 Te 7−x Se x powder samples were recorded on an XploRA ONE-532 (Horiba, Kyoto, Japan). ZEM-3 (Ulac-Riko, Yokohama, Japan) was performed to measure the electrical conductivity (σ) and Seebeck coefficient (S) from 300 K to 750 K [12]. The thermal conductivity (κ) was obtained from the relation κ = λρC p [9], where the thermal diffusion coefficient (λ) was obtained using the laser pulse analyzer (LFA457, Netzsch, Selb, Germany); the density (ρ) was measured by the Archimedes drainage method; the heat capacity C p was calculated by the Dulong-Petit law. The Hall coefficient R H was obtained by the Physical Property Measure System (PPMS, Quantum Design, San Diego, CA, USA), using an AC magnetic field Hall test in the range −5 T-5 T. The carrier concentration was obtained according to p H = 1/eR H , and the mobility was calculated based on µ H = σR H . The absorption spectra were obtained by measuring the powder samples using UV-Vis spectroscopy (Shimadzu Spectroscope, UV-3101PC, Kyoto, Japan) at room temperature [8]. The optical band gaps of the samples were calculated from the relationship between the optical band gap and the absorption [26].

Phase and Crystal Structures
The X-ray diffraction (XRD) patterns of GeSb 4 Te 7−x Se x (x = 0, 0.1, 0.2, 0.3, 0.5, 0.8, 1.5, 2.0, and 2.5) were obtained at room temperature and are presented in Figure 1a. The diffraction peaks are well identified as belonging to the hexagonal structure (P3m1) of GeSb 4 Te 7 . When the Se content is less than 2.0, no obvious secondary phase is observed within the detection limits. However, impurity peaks appear when x = 2.5, indexed to GeSb 2 Te 4 . With the increase of Se content, the diffraction peaks gradually shift towards the high angle, attributed to the small atomic radius of Se in comparison with Te. The lattice constants of the GeSb 4 Te 7−x Se x samples were obtained by refining the XRD data, as shown in Figure 1b. The a-and c-axis lattice constants both show decreasing trends with increasing Se content, which is consistent with the XRD results. Furthermore, SEM and EDS analyses of GeSb 4 Te 5 Se 2 are shown in Figure S1, confirming that all the elements are homogeneously distributed without obvious secondary phases or enriched phases. These results indicate that Se atoms enter the lattice of GeSb 4 Te 7 and substitute the Te atoms.

Material Characterization
X-ray diffraction with Cu Kα radiation (XRD, D/max 2550 V, Rigaku, Tokyo, Japan) was performed to determine the crystal structures. Scanning electron microscopy (SEM, ZEISS supra55, Munich, Germany) equipped with EDS was employed to characterize the chemical components. The Raman spectrum of the GeSb4Te7−xSex powder samples were recorded on an XploRA ONE-532 (Horiba, Kyoto, Japan). ZEM-3 (Ulac-Riko, Yokohama, Japan) was performed to measure the electrical conductivity (σ) and Seebeck coefficient (S) from 300 K to 750 K [12]. The thermal conductivity ( ) was obtained from the relation = [9], where the thermal diffusion coefficient ( ) was obtained using the laser pulse analyzer (LFA457, Netzsch, Selb, Germany); the density ( ) was measured by the Archimedes drainage method; the heat capacity Cp was calculated by the Dulong-Petit law. The Hall coefficient was obtained by the Physical Property Measure System (PPMS, Quantum Design, San Diego, CA, USA), using an AC magnetic field Hall test in the range −5 T-5 T. The carrier concentration was obtained according to = 1/ , and the mobility was calculated based on = .
The absorption spectra were obtained by measuring the powder samples using UV-Vis spectroscopy (Shimadzu Spectroscope, UV-3101PC, Kyoto, Japan) at room temperature [8]. The optical band gaps of the samples were calculated from the relationship between the optical band gap and the absorption coeffi-

Phase and Crystal Structures
The X-ray diffraction (XRD) patterns of GeSb4Te7−xSex (x = 0, 0.1, 0.2, 0.3, 0.5, 0.8, 1.5, 2.0, and 2.5) were obtained at room temperature and are presented in Figure 1a. The diffraction peaks are well identified as belonging to the hexagonal structure ( 31 Pm ) of GeSb4Te7. When the Se content is less than 2.0, no obvious secondary phase is observed within the detection limits. However, impurity peaks appear when x = 2.5, indexed to GeSb2Te4. With the increase of Se content, the diffraction peaks gradually shift towards the high angle, attributed to the small atomic radius of Se in comparison with Te. The lattice constants of the GeSb4Te7−xSex samples were obtained by refining the XRD data, as shown in Figure 1b. The a-and c-axis lattice constants both show decreasing trends with increasing Se content, which is consistent with the XRD results. Furthermore, SEM and EDS analyses of GeSb4Te5Se2 are shown in Figure S1, confirming that all the elements are homogeneously distributed without obvious secondary phases or enriched phases. These results indicate that Se atoms enter the lattice of GeSb4Te7 and substitute the Te atoms.

Raman Measurement and Analysis
Raman scattering spectroscopy is an effective and highly sensitive tool for characterizing the crystal structure of materials since photons directly couple to the lattice vibrations that reflect the local crystal symmetry. To investigate the effect of Se on the original bonding environment, Raman spectroscopy analysis was conducted to identify the frequency of bonding vibrational modes among Ge, Sb, Te, and Se atoms. GeSb 4 Te 7 possesses a hexagonal phase structure (D 3 3d symmetry) with 10 Raman vibrational modes at the Γ point of the Brillouin zone [27]: where the A 1g and E g modes correspond to the intralayer and interlayer vibrations along the c-axis and are related to the stretching vibration and the birefringent vibration of atoms in the molecule, respectively ( Figures S2 and S3). To study the crystal structure and vibrational modes of GeSb 4 Te 7 , we adopted a 5 × 5 × 1 supercell and calculated the theoretical frequencies of Raman vibrational modes employing the density functional theory (DFT), as shown in Table S1. Different from Ge 2 Sb 2 Te 5 , GeSb 4 Te 7 consists of five-layer Sb 2 Te 3 and seven-layer GeSb 2 Te 4 along the c-axis (Figure 2a), and thus its Raman vibrational modes can be considered a superposition of several module vibrational modes [28]. The detailed theoretical analysis of Raman vibration modes is described in Supplementary Material.

Thermoelectric Properties
The electrical conductivity (σ), Seebeck coefficient (S), and power factor (PF) GeSb4Te7−xSex samples (x = 0, 0.1, 0.2, 0.3, 0.5, 0.8, 1.5, and 2.0) with the temperatu presented in Figure 3. All samples exhibit positive and metallic conducting behavio σ decreases continuously over the entire measured temperature range with the Se co increases. The σ for GeSb4Te5.5Se1.5 is 8.9 × 10 4 S m −1 at 750 K, which is just about 3 that for pristine GeSb4Te7. Moreover, Se alloying significantly enhances the Seebeck ficient of GeSb4Te7. The S for GeSb4Te5.5Se1.5 is around 165 μV K −1 at 750 K, which is 140% higher than that of pristine GeSb4Te7. Figure 3d illustrates the S and GeSb4Te7−xSex at 300 K and 700 K as a function of the Se-alloying content. Howeve enhancement in S cannot compensate for the reduction in σ, resulting in a contin decrease of the PF with increasing Se-alloying content at a higher temperature rang shown in Figure 3c, the maximum PF for GeSb4Te5Se2 is 6.8 μW cm −1 K −1 at 300 K, twice that of GeSb4Te7. Moreover, we fitted the experimental Raman spectrum of GeSb 4 Te 7 using the Gaussian model (Figure 2b), and the detailed values of the fitted parameters are shown in Table S2. The A, B, C, and E peaks of the Raman spectrum for GeSb 4 Te 7 correspond to the calculated vibrational modes A 1g (2), E g (3), A 1g (3), and A 1g (4). The absence of the D peak in the calculated results may be attributed to the anisotropy of GeSb 4 Te 7 , which is also observed in the experimental Raman vibrational frequency of MnBi 4 Te 7 with a similar structure [28]. The experimental Raman spectra of GeSb 4 Te 7−x Se x are presented in Figure 2c. It is indicated that Se-alloying introduces a new Raman vibrational mode with a frequency of approximately~162 cm −1 (Peak F), which corresponds to the GeSe 2 [29]. With the increase of Se, the C peak generally shifts to the right direction, as plotted in Figure 2d, indicating that Se-alloying enhances the vibrational modes of A 1g . This suggests that the substitution of Te by Se enhances the interatomic interactions within the layer and the bond strength between Ge and Te/Se, which affects the intrinsic Ge vacancy and decreases the hole carrier concentration. A similar phenomenon was observed in S-doped in Cu 2 Se [30]. It is noteworthy that the shape of Raman peaks is not changed, implying that the crystal structure and symmetry of GeSb 4 Te 7 are scarcely altered via the introduction of Se.

Thermoelectric Properties
The electrical conductivity (σ), Seebeck coefficient (S), and power factor (PF) of the GeSb 4 Te 7−x Se x samples (x = 0, 0.1, 0.2, 0.3, 0.5, 0.8, 1.5, and 2.0) with the temperature are presented in Figure 3. All samples exhibit positive and metallic conducting behavior. The σ decreases continuously over the entire measured temperature range with the Se content increases. The σ for GeSb 4 Te 5.5 Se 1.5 is 8.9 × 10 4 S m −1 at 750 K, which is just about 30% of that for pristine GeSb 4 Te 7 . Moreover, Se alloying significantly enhances the Seebeck coefficient of GeSb 4 Te 7 . The S for GeSb 4 Te 5.5 Se 1.5 is around 165 µV K −1 at 750 K, which is about 140% higher than that of pristine GeSb 4 Te 7 . Figure 3d illustrates the S and σ of GeSb 4 Te 7−x Se x at 300 K and 700 K as a function of the Se-alloying content. However, the enhancement in S cannot compensate for the reduction in σ, resulting in a continuous decrease of the PF with increasing Se-alloying content at a higher temperature range. As shown in Figure 3c, the maximum PF for GeSb 4 Te 5 Se 2 is 6.8 µW cm −1 K −1 at 300 K, about twice that of GeSb 4 Te 7 .  The carrier concentration (nH) and mobility (μH) were measured to further understand the electrical transport properties of GeSb4Te7−xSex samples. Upon the introduction of Se into GeSb4Te7, the carrier concentration (nH) at 300 K reduces from 5.8 × 10 20 cm −3 to 2.4 × 10 20 cm −3 , as shown in Figure 4a. This reduction of nH is attributed to the enhanced interatomic forces within the layer via the introduced vibrational modes of GeSe2 upon Se alloying. The suppressed nH is responsible for the decreased electrical conductivity and the enhanced Seebeck coefficient (Figure 3d). However, the carrier mobility (μH) hardly changes with increasing Se (x ≤ 0.8). When the Se content is more than 0.8, the μH shows a significant decrease, and it is only 26.0 cm −2 V −1 s −1 for x = 1.5, which is approximately 68% The carrier concentration (n H ) and mobility (µ H ) were measured to further understand the electrical transport properties of GeSb 4 Te 7−x Se x samples. Upon the introduction of Se into GeSb 4 Te 7 , the carrier concentration (n H ) at 300 K reduces from 5.8 × 10 20 cm −3 to 2.4 × 10 20 cm −3 , as shown in Figure 4a. This reduction of n H is attributed to the enhanced interatomic forces within the layer via the introduced vibrational modes of GeSe 2 upon Se alloying. The suppressed n H is responsible for the decreased electrical conductivity and the enhanced Seebeck coefficient (Figure 3d). However, the carrier mobility (µ H ) hardly changes with increasing Se (x ≤ 0.8). When the Se content is more than 0.8, the µ H shows a significant decrease, and it is only 26.0 cm −2 V −1 s −1 for x = 1.5, which is approximately 68% of that for the pristine GeSb 4 Te 7 . The single parabolic band (SPB) model was employed to analyze the modification of electrical transport properties for GeSb4Te7−xSex. The transport parameters can be expressed as follows [31][32][33]:  The single parabolic band (SPB) model was employed to analyze the modification of electrical transport properties for GeSb 4 Te 7−x Se x . The transport parameters can be expressed as follows [31][32][33]: where η is the reduced Fermi level, F i (η) is the Fermi integral expressed by 1+exp(x−η) , m* is the effective mass, e is the elementary charge, k B is the Boltzmann constant, and h is the Planck constant. Figure 4b (2) and (3), the Pisarenko curves with different m* are also plotted in Figure 4b. For the pristine GeSb 4 Te 7 , the m* is 0.95 m e at 300 K (m e is the free electron mass). The experimental data of all Se-alloyed samples are between two calculated dashed lines with m* = 0.92 m e and 1.62 m e , which are derived under the single parabolic band (SPB) model [31,32,34]. This indicates that Se-alloying increases the DOS near the Fermi energy level of GeSb 4 Te 7 . A similar phenomenon was also observed in Se-alloyed Ge 2 Sb 2 Te 5 [15]. Furthermore, the band gaps of the GeSb 4 Te 7−x Se x samples were measured by the optical diffuse reflectance spectrum and listed in Table S4, indicating that Se-alloying affects the band structure and slightly decreases the band gap of GeSb 4 Te 7 .
We also investigated the relationship between n and µ H for GeSb 4 Te 7−x Se x at 300 K, which is illustrated in Figure 4c. The red dashed line is the theoretical curve considering only acoustic phonon scattering based on the SPB model for m* = 0.95 m e , and the purple dashed line is the theoretical curve considering acoustic phonon and alloying scattering. For samples with x less than 0.8, acoustic phonon scattering is the dominant scattering mechanism for carriers, and the mobility is calculated based on acoustic phonon scattering following the red dotted line. However, when x ≥ 0.8, alloying scattering is not negligible anymore, alloying scattering combined with acoustic phonon scattering is considered. When the carriers are dominantly scattered by both acoustic phonons and alloy scattering, µ 0 is provided by [30,35]: 1 where µ ac,0 and µ al,0 are the mobilities for acoustic phonon scattering and alloy scattering, respectively. The mobilities of the samples with x ≥ 0.8 obviously deviate from the red dashed line. The decrease in µ H with increasing Se-alloying content in Figure 4a is attributed to the additional alloy scattering. The PF and n H data for GeSb 4 Te 7−x Se x at 300 K are plotted in Figure 4d. The experimental data fall between the theoretical Pisarenko curves with m* = 0.95 m e and m* = 1.62 m e . Se alloying in GeSb 4 Te 7 decreases the carrier concentration and achieves higher PF.
In addition to the electrical transport properties, the thermal transport properties of GeSb 4 Te 7 are also strongly affected by alloying Se. The thermal conductivities (κ) of all GeSb 4 Te 7−x Se x samples are presented in Figure 5a. With the increasing Se alloying content, the κ gradually decreases. The κ of GeSb 4 Te 5.5 Se 1.5 is approximately 1.2 W m −1 K −1 at 300 K, roughly 43% of GeSb 4 Te 7 . Such a reduction is mainly attributed to the suppression of the carrier thermal conductivity (κ c ). The κ c is calculated based on the Wiedeman-Franz law and presented in Figure 5b (κ c = L 0 Tσ, where L 0 is calculated based on the single parabolic band model) [36][37][38]. The κ c decreases with increasing Se alloy content over the temperature range. The lattice thermal conductivities κ L (κ L = κ − κ c ) of GeSb 4 Te 7−x Se x samples are also calculated and presented in Figure S4. The κ L decreases first and then rises with increasing Se content. A similar phenomenon is observed in the Se-alloyed Ge 2 Sb 2 Te 5 [15]. The minimum κ L , about~0.26 Wm −1 K −1 at 400 K, is obtained in GeSb 4 Te 6.8 Se 0.2 . The reduction of κ L is primarily caused by the differences in atomic radii and mass between Te and Se atoms, which introduces a strong strain field and mass fluctuations. also calculated and presented in Figure S4. The κL decreases first and then rises with increasing Se content. A similar phenomenon is observed in the Se-alloyed Ge2Sb2Te5 [15]. The minimum κL, about ~0.26 Wm −1 K −1 at 400 K, is obtained in GeSb4Te6.8Se0.2. The reduction of κL is primarily caused by the differences in atomic radii and mass between Te and Se atoms, which introduces a strong strain field and mass fluctuations. The TE figure of merit zT for the GeSb4Te7−xSex samples is presented in Figure 6a. The zT is obviously enhanced upon alloying Se over the entire measured temperature range, attributed to the improved Seebeck coefficient and suppressed thermal conductivity. When x = 1.5, a maximum zT value of 0.77 is achieved at 750 K, about 50% higher than that of pristine GeSb4Te7. Moreover, the average zT value within the temperature range 300-750 K for GeSb4Te5.5Se1.5 is 0.48. These values are among the highest values reported in GST compounds, as shown in Figure 6b [13][14][15]17,19,39].  [13][14][15]17,19,39].

Conclusions
In summary, a series of polycrystalline GeSb4Te7−xSex compounds were synthesized and investigated. Alloying Se suppresses the carrier concentration resulting from the enhancing interatomic interaction forces within the layers via the introduced new Raman vibrational modes. The Seebeck coefficient is improved because of the reduced carrier The TE figure of merit zT for the GeSb 4 Te 7−x Se x samples is presented in Figure 6a. The zT is obviously enhanced upon alloying Se over the entire measured temperature range, attributed to the improved Seebeck coefficient and suppressed thermal conductivity. When x = 1.5, a maximum zT value of 0.77 is achieved at 750 K, about 50% higher than that of pristine GeSb 4 Te 7 . Moreover, the average zT value within the temperature range 300-750 K for GeSb 4 Te 5.5 Se 1.5 is 0.48. These values are among the highest values reported in GST compounds, as shown in Figure 6b [13][14][15]17,19,39]. also calculated and presented in Figure S4. The κL decreases first and then rises with increasing Se content. A similar phenomenon is observed in the Se-alloyed Ge2Sb2Te5 [15].
The minimum κL, about ~0.26 Wm −1 K −1 at 400 K, is obtained in GeSb4Te6.8Se0.2. The reduction of κL is primarily caused by the differences in atomic radii and mass between Te and Se atoms, which introduces a strong strain field and mass fluctuations. The TE figure of merit zT for the GeSb4Te7−xSex samples is presented in Figure 6a. The zT is obviously enhanced upon alloying Se over the entire measured temperature range, attributed to the improved Seebeck coefficient and suppressed thermal conductivity. When x = 1.5, a maximum zT value of 0.77 is achieved at 750 K, about 50% higher than that of pristine GeSb4Te7. Moreover, the average zT value within the temperature range 300-750 K for GeSb4Te5.5Se1.5 is 0.48. These values are among the highest values reported in GST compounds, as shown in Figure 6b [13][14][15]17,19,39].

Conclusions
In summary, a series of polycrystalline GeSb4Te7−xSex compounds were synthesized and investigated. Alloying Se suppresses the carrier concentration resulting from the enhancing interatomic interaction forces within the layers via the introduced new Raman vibrational modes. The Seebeck coefficient is improved because of the reduced carrier

Conclusions
In summary, a series of polycrystalline GeSb 4 Te 7−x Se x compounds were synthesized and investigated. Alloying Se suppresses the carrier concentration resulting from the enhancing interatomic interaction forces within the layers via the introduced new Raman vibrational modes. The Seebeck coefficient is improved because of the reduced carrier concentration and enhanced effective mass by Se alloying. In addition, the thermal conductivity is obviously decreased by the simultaneous reduction of κ L and κ c . Eventually, GeSb 4 Te 5.5 Se 1.5 shows a peak zT value of 0.77 at 750 K and an average zT value of 0.48 within the temperature range of 300-750 K. This study deepens the understanding of GeSb 4 Te 7 and provides a new approach for optimizing the TE performance of GST compounds via introducing new vibrational modes.
Supplementary Materials: The following supporting information can be downloaded at: https: //www.mdpi.com/article/10.3390/ma16093368/s1. Figure S1: (a) Backscatter electron (BSE) image, (b) secondary electron (SE2) image of the fractured surface, and energy dispersive spectroscopy (EDS) mappings for (c) Ge, (d) Sb, (e) Te, (f) Se of GeSb 4 Te 5 Se 2 ; Figure S2: Sketch of the displacement patterns of Raman-active E g phonons at the Γ-point for GeSb 4 Te 7 . Displacements along the c axis are involved; Figure S3: Sketch of the displacement patterns of Raman-active A 1g phonons at the Γ-point for GeSb 4 Te 7 . Displacements along the c axis are involved; Figure S4: Temperature dependence of lattice thermal conductivity κ L for GeSb 4 Te 7-x Se x samples; Figure S5: (a) Mass change and (b) the surface of GeSb 4 Te 5 Se 2 samples before and after annealing at 750 K; Table S1: Theoretically calculated and measured frequency (cm −1 ) of g-mode (Raman-active) phonons of the Γ-point phonons for optimized geometry GeSb 4 Te 7 ; Table S2: Peak identity of Raman spectra of GeSb 4 Te 7 ; Table S3: C-peak Raman shifts and linewidths of GeSb 4 Te 7-x Se x with different Se contents; Table S4: Direct band gap of hexagonal GeSb 4 Te 7-x Se x compounds. References [27,28,40,41] are cited in the supplementary materials.