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Open AccessArticle

Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon

Institute for Photovoltaics and Research Center SCoPE, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
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Academic Editor: Jung Ho Je
Materials 2017, 10(2), 189; https://doi.org/10.3390/ma10020189
Received: 9 November 2016 / Revised: 14 January 2017 / Accepted: 13 February 2017 / Published: 16 February 2017
(This article belongs to the Section Structure Analysis and Characterization)
Boron pile-up at the maximum melt depth for laser melt annealing of implanted silicon has been reported in numerous papers. The present contribution examines the boron accumulation in a laser doping setting, without dopants initially incorporated in the silicon wafer. Our numerical simulation models laser-induced melting as well as dopant diffusion, and excellently reproduces the secondary ion mass spectroscopy-measured boron profiles. We determine a partitioning coefficient k p above unity with k p = 1 . 25 ± 0 . 05 and thermally-activated diffusivity D B , with a value D B ( 1687 K ) = ( 3 . 53 ± 0 . 44 ) × 10 4 cm 2 ·s 1 of boron in liquid silicon. For similar laser parameters and process conditions, our model predicts the anticipated boron profile of a laser doping experiment. View Full-Text
Keywords: solute trapping; rapid solidification; silicon; laser melting; boron doping solute trapping; rapid solidification; silicon; laser melting; boron doping
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MDPI and ACS Style

Lill, P.C.; Dahlinger, M.; Köhler, J.R. Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon. Materials 2017, 10, 189.

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