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Materials 2017, 10(2), 189;

Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon

Institute for Photovoltaics and Research Center SCoPE, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
Author to whom correspondence should be addressed.
Academic Editor: Jung Ho Je
Received: 9 November 2016 / Revised: 14 January 2017 / Accepted: 13 February 2017 / Published: 16 February 2017
(This article belongs to the Section Structure Analysis and Characterization)
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Boron pile-up at the maximum melt depth for laser melt annealing of implanted silicon has been reported in numerous papers. The present contribution examines the boron accumulation in a laser doping setting, without dopants initially incorporated in the silicon wafer. Our numerical simulation models laser-induced melting as well as dopant diffusion, and excellently reproduces the secondary ion mass spectroscopy-measured boron profiles. We determine a partitioning coefficient k p above unity with k p = 1 . 25 ± 0 . 05 and thermally-activated diffusivity D B , with a value D B ( 1687 K ) = ( 3 . 53 ± 0 . 44 ) × 10 4 cm 2 ·s 1 of boron in liquid silicon. For similar laser parameters and process conditions, our model predicts the anticipated boron profile of a laser doping experiment. View Full-Text
Keywords: solute trapping; rapid solidification; silicon; laser melting; boron doping solute trapping; rapid solidification; silicon; laser melting; boron doping

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Lill, P.C.; Dahlinger, M.; Köhler, J.R. Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon. Materials 2017, 10, 189.

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