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Analysis of Various Pickup Coil Designs in Nonmodule-Type GaN Power Semiconductors

The Department of Electrical and Biomedical Engineering, Hanyang University, Seoul 04763, Korea
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Author to whom correspondence should be addressed.
Sensors 2020, 20(21), 6066; https://doi.org/10.3390/s20216066
Received: 29 August 2020 / Revised: 21 October 2020 / Accepted: 23 October 2020 / Published: 25 October 2020
(This article belongs to the Section Electronic Sensors)
Gallium nitride (GaN) devices are advantageous over conventional Silicon (Si) devices in terms of their small size, low on-resistance, and high dv/dt characteristics; these ensure a high integrated density circuit configuration, high efficiency, and fast switching speed. Therefore, in the diagnosis and protection of a system containing a GaN power semiconductor, the transient state for accurate switch current measurement must be analyzed. The pick-up coil, as a current sensor for switch current measurement in a system comprising a surface-mount-device-type nonmodular GaN power semiconductor, has the advantages of a higher degree-of-freedom configuration for its printed circuit board, a relatively small size, and lower cost than other current sensors. However, owing to the fast switching characteristics of the GaN device, a bandwidth of hundreds MHz must be secured along with a coil configuration that must overcome the limitations of relatively low sensitivity of the conventional current sensor. This paper analyzes the pick-up coil sensor models that can achieve optimal bandwidth and sensitivity for switch current measurement in GaN based device. So four configurable pick-up coil models are considered and compared according to coil-parameter using mathematical methods, magnetic, and frequency-response analysis. Finally, an optimal coil model is proposed and validated using a double-pulse test. View Full-Text
Keywords: GaN; Rogowski coil; pick-up coil; double pulse test; switch current GaN; Rogowski coil; pick-up coil; double pulse test; switch current
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MDPI and ACS Style

Kim, U.-J.; Kim, R.-Y. Analysis of Various Pickup Coil Designs in Nonmodule-Type GaN Power Semiconductors. Sensors 2020, 20, 6066. https://doi.org/10.3390/s20216066

AMA Style

Kim U-J, Kim R-Y. Analysis of Various Pickup Coil Designs in Nonmodule-Type GaN Power Semiconductors. Sensors. 2020; 20(21):6066. https://doi.org/10.3390/s20216066

Chicago/Turabian Style

Kim, Ui-Jin, and Rae-Young Kim. 2020. "Analysis of Various Pickup Coil Designs in Nonmodule-Type GaN Power Semiconductors" Sensors 20, no. 21: 6066. https://doi.org/10.3390/s20216066

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