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Plasma Sensors and Their Applications

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Physical Sensors".

Deadline for manuscript submissions: 25 May 2024 | Viewed by 545

Special Issue Editor


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Guest Editor
Institute of Plasma physics, Chinese Academy of Science, Hefei 230031, China
Interests: plasma physics; high temperature plasma diagnosis; plasma sensor

Special Issue Information

Dear Colleagues,

Plasma Science and Engineering is a multidisciplinary area encompassing some of the most exciting fundamental and applied research themes in today's scientific landscape, with an extraordinarily broad impact in science, technology, and industry.

Measuring the parameters of plasmas, usually termed as plasma diagnostics, is a key challenge in these applications, both for understanding the basic principles and, in many cases, for the optimization and control of processes. There are many different measurement and diagnostics systems to detect plasma parameters in magnetic confinement fusion devices, such as induction coils, CCD, laser-aided devices, spectroscopy, and microwaves, all of which are used for machine operation and physics analysis.

Plasma diagnostics is based on a wide variety of characteristic plasma phenomena and, although most of the techniques used are already well established, it remains a highly challenging and fascinating discipline.

This Special Issue will cover the methods, instruments, and experimental techniques used to measure the properties of plasma. 

Dr. Biao Shen
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • plasma sensors
  • laser-produced plasma
  • plasma measurement
  • plasma diagnostics—interferometry, spectroscopy, and imaging

Published Papers (1 paper)

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Research

12 pages, 3950 KiB  
Article
Enhancing Si3N4 Selectivity over SiO2 in Low-RF Power NF3–O2 Reactive Ion Etching: The Effect of NO Surface Reaction
by Nguyen Hoang Tung, Heesoo Lee, Duy Khoe Dinh, Dae-Woong Kim, Jin Young Lee, Geon Woong Eom, Hyeong-U Kim and Woo Seok Kang
Sensors 2024, 24(10), 3089; https://doi.org/10.3390/s24103089 - 13 May 2024
Viewed by 337
Abstract
Highly selective etching of silicon nitride (Si3N4) and silicon dioxide (SiO2) has received considerable attention from the semiconductor community owing to its precise patterning and cost efficiency. We investigated the etching selectivity of Si3N4 [...] Read more.
Highly selective etching of silicon nitride (Si3N4) and silicon dioxide (SiO2) has received considerable attention from the semiconductor community owing to its precise patterning and cost efficiency. We investigated the etching selectivity of Si3N4 and SiO2 in an NF3/O2 radio-frequency glow discharge. The etch rate linearly depended on the source and bias powers, whereas the etch selectivity was affected by the power and ratio of the gas mixture. We found that the selectivity can be controlled by lowering the power with a suitable gas ratio, which affects the surface reaction during the etching process. X-ray photoelectron spectroscopy of the Si3N4 and QMS measurements support the effect of surface reaction on the selectivity change by surface oxidation and nitrogen reduction with the increasing flow of O2. We suggest that the creation of SiOxNy bonds on the surface by NO oxidation is the key mechanism to change the etch selectivity of Si3N4 over SiO2. Full article
(This article belongs to the Special Issue Plasma Sensors and Their Applications)
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