Special Issue "Compound Semiconductors for RF Devices and LEDs"

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A special issue of Nanomaterials (ISSN 2079-4991).

Deadline for manuscript submissions: closed (31 July 2014)

Special Issue Editors

Guest Editor
Prof. Dr. Ishiang Shih
Department of Electrical and Computer Engineering, Faculty of Engineering, McGill University, Montreal, Quebec H3A 2A7, Canada
Website: http://people.mcgill.ca/ishiang.shih/
E-Mail: ishiang.shih@mcgill.ca
Phone: +1 514 398 7147
Fax: +1-514 398 4470
Interests: nano structured materials; organic semiconductors; III-V epitaxy; HEMTs; metal oxides; manufacturing technology; photovoltaics

Guest Editor
Prof. Dr. Zetian Mi
Department of Electrical and Computer Engineering, Faculty of Engineering, McGill University, Montreal, Quebec H3A 2A7, Canada
E-Mail: zetian.mi@mcgill.ca
Phone: +1-514-398-7114
Fax: +1 514 398 4470
Interests: nanowires; LEDs; III-V materials and devices; Si photonics; solar cells and solar fuels

Guest Editor
Prof. Dr. Yi Chi Shih
Department of Electrical and Computer Engineering, University of California at Los Angeles, CA 90095-1594, USA
E-Mail: yichishih@gmail.com
Phone: +1 310 541 8742
Interests: III-V devices; HEMTs; MMICs; manufacturing technology

Special Issue Information

Dear Colleagues,

The development of compound semiconductors in recent decades has led to various applications including RF receivers for wireless networks and light emitting devices for lighting.

In this Special Issue on Nanomaterials, advancement on epitaxial technology of nano layer structures for RF and LED devices will be covered. We will include both research papers and review papers in the following areas:

  • epitaxial layer materials deposition for RF receivers, including GaAs-based and GaN-based systems
  • advanced processing of high speed devices and RF circuits, including GaAs-based and GaN-based systems
  • epitaxial layer materials deposition for LEDs
  • advanced processing of high brightness LEDs
  • growth and characterization of nano structures for advanced LEDs

Prof. Dr. Ishiang Shih
Prof. Dr. Zetian Mi
Prof. Dr. Yi Chi Shih
Guest Editor
s

Submission

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. Papers will be published continuously (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are refereed through a peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed Open Access quarterly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 300 CHF (Swiss Francs). English correction and/or formatting fees of 250 CHF (Swiss Francs) will be charged in certain cases for those articles accepted for publication that require extensive additional formatting and/or English corrections.


Keywords

  • nano structured materials
  • optoelectronic properties
  • nanowires and devices
  • III-V epitaxy
  • GaN epitaxy
  • LEDs
  • HEMTs
  • power devices, circuits, MMICs and manufacturing technology

Published Papers

No papers have been published in this special issue yet, see below for planned papers.

Planned Papers

The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.

Type of Paper: Review
Title: Tuning impurities and defects in compound semiconductors by surfactant and strain effects
Authors:
Feng Liu 1 and Junyi Zhu 2
Affiliation
s:
1
Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT 84112, USA
2
The Chinese University of Hong Kong, Shatin, NT, Hong Kong
Abstract:
The concentration of impurities (dopants) and defects in compound semiconductors is a key issue pertaining to their applications in electronic and optoelectronic devices. To enhance the device performance and efficiency, it is often desirable to tune the concentration of dopants and defects. In this paper, we review most recent studies of tuning dopants and defects in compound semiconductors by surfactants and external strains, to illustrate the power of first-principles calculations in computational design of novel approaches to tailor the material’s properties. Surfactants are effective in changing the structural and electronic environment near the surface during the growth of compound semiconductors and hence altering the film composition. As an example, we will review in-depth a newly discovered “dual surfactant” effect in enhancing the p-type doping in GaP, an important light emitting diode material. Strain engineering has been widely adopted as a viable approach to alter various material properties. Here we will focus on the example of strain tuning the defect concentration in CuZnSnSe, a promising material for thin-film solar cell applications. The two approaches we review are expected to be general and effective in many other material systems.

Last update: 24 March 2014

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