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Advanced Materials and Devices in Solid State Lighting
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Advanced Materials and Devices in Solid State Lighting

A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: closed (31 August 2019) | Viewed by 7076

Special Issue Editors

Dr. Nicola Trivellin

E-Mail Website
Guest Editor
LightCube SRL, Univ Padua, Dept Informat Engn, Padova, Italy
Interests: compound semiconductor devices for solid state lighting
Prof. Dr. Matteo Meneghini

E-Mail Website
Guest Editor
Department of Information Engineering, University of Padova, Via Gradenigo 6/B, I-35131 Padova, Italy
Interests: LEDs; laser diodes; reliability; degradation; defects; characterization; HEMT; gallium nitride; GaN; GaO; GaAs; solar cells; photodetectors
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear colleague,

Solid State Lighting is becoming the leading technology in the lighting industry, allowing to innovate the fields from architectural to domestic applications. In such a growing field, new devices and advanced materials allow for the improvement of efficiency, reliability and performances, but also develop new functionalities, product usage, cost and pollution reduction. Driven by an ongoing multi-field research, Solid State Lighting demands for the development of different technologies: Efficient and reliable light emitting devices, thermal management systems, control systems and devices for new functionalities, optical solutions for beam shaping, as long as the development of technologies to bridge the gap between lighting systems and the human circadian rhythm.

We propose this Special Issue as an excellent opportunity for those who are studying and working with the many materials and devices involved in Solid State Lighting applications to reflect the most recent theoretical and practical developments of this intriguing field. Research articles, review articles and communications relating to theory, simulation, processes, properties, characterization and applications of materials and devices for Solid State Lighting are all invited for this Special Issue.

The topics of this Special Issue include, but are not limited to, the following:

  • Compound Semiconductor growth and processing
  • Substrates for light-emitting devices
  • Polar, non-polar and semipolar materials
  • Light emitting device optimization
  • Internal and external quantum efficiency optimization
  • Performance and reliability of Solid State Lighting Devices
  • Laser based lighting systems
  • Organic Light emitting Devices
  • Design of optical systems for Solid State Lighting
  • New materials for optical systems
  • High thermal conductivity materials
  • Thermal droop and thermal management
  • Nanowire LEDs
  • Phosphors for solid-state lighting
  • Applications of LEDs and lasers
  • Simulation and optimization of SSL systems

Dr. Nicola Trivellin
Prof. Matteo Meneghini
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • SSL
  • Light emitting diodes
  • Phosphors
  • Optical materials
  • Thermal management

Published Papers (2 papers)

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Research

14 pages, 8671 KiB  
Article
Numerical Simulation, Machining and Testing of a Phase Change Heat Sink for High Power LEDs
by Jianhua Xiang, Haoxing Zheng, Yipin Wang, Chunliang Zhang, Chao Zhou and Conggui Chen
Materials 2019, 12(13), 2193; https://doi.org/10.3390/ma12132193 - 08 Jul 2019
Cited by 2 | Viewed by 2791
Abstract
Thermal management is crucial to guarantee the normal operation of light-emitting diodes (LEDs) Phase change heat sink is superior to traditional metal solid heat sink due to very small thermal resistance. In this study, a new type of phase change heat sink for [...] Read more.
Thermal management is crucial to guarantee the normal operation of light-emitting diodes (LEDs) Phase change heat sink is superior to traditional metal solid heat sink due to very small thermal resistance. In this study, a new type of phase change heat sink for high power LEDs is first designed. Then, the fabrication process of boiling structures at the evaporation surface of the phase change heat sink is discussed and analyzed. To make a comparison and deep discussion, the machining process is simulated through the FEM (finite element analysis) software, DEFORM-3D. Last but not least, heat transfer performance of the fabricated phase change heat sink is tested. Results have shown that the designed new type of phase change heat sink has superior heat transfer performance and is suitable for heat dissipation of high-power LEDs. Full article
(This article belongs to the Special Issue Advanced Materials and Devices in Solid State Lighting)
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13 pages, 2692 KiB  
Article
Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors
by Igor A. Khramtsov and Dmitry Yu. Fedyanin
Materials 2019, 12(12), 1972; https://doi.org/10.3390/ma12121972 - 19 Jun 2019
Cited by 9 | Viewed by 3776
Abstract
Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance solid-state lighting by delivering novel light sources. However, electrical pumping of these devices [...] Read more.
Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance solid-state lighting by delivering novel light sources. However, electrical pumping of these devices is still a challenging problem. Many wide-bandgap semiconductor materials, such as SiC, GaN, AlN, ZnS, and Ga2O3, can be easily n-type doped, but their efficient p-type doping is extremely difficult. The lack of holes due to the high activation energy of acceptors greatly limits the performance and practical applicability of wide-bandgap semiconductor devices. Here, we study a novel effect which allows homojunction semiconductor devices, such as p-i-n diodes, to operate well above the limit imposed by doping of the p-type material. Using a rigorous numerical approach, we show that the density of injected holes can exceed the density of holes in the p-type injection layer by up to four orders of magnitude depending on the semiconductor material, dopant, and temperature, which gives the possibility to significantly overcome the doping problem. We present a clear physical explanation of this unexpected feature of wide-bandgap semiconductor p-i-n diodes and closely examine it in 4H-SiC, 3C-SiC, AlN, and ZnS structures. The predicted effect can be exploited to develop bright-light-emitting devices, especially electrically driven nonclassical light sources based on color centers in SiC, AlN, ZnO, and other wide-bandgap semiconductors. Full article
(This article belongs to the Special Issue Advanced Materials and Devices in Solid State Lighting)
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