Special Issue "Growth and Evaluation of Multicrystalline Silicon"

A special issue of Crystals (ISSN 2073-4352).

Deadline for manuscript submissions: closed (15 July 2018)

Special Issue Editors

Guest Editor
Prof. Dr. Kozo Fujiwara

Institute for Materials Research, Tohoku University, Sendai, Japan
Website | E-Mail
Interests: Growth of mc-Si ingot; Growth mechanism of mc-Si; Defects formation in mc-Si; Evaluations of mc-Si wafer
Guest Editor
Prof. Dr. Chung-wen Lan

Department of Chemical Engineering National Taiwan University
Website | E-Mail
Interests: Crystal Growth Technology, Electronic Materials Processing, CFD and High Performance Computing
Guest Editor
Prof. Dr. Koichi Kakimoto

Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-koen, Kasuga Fukuoka 816-8580, Japan
Website | E-Mail
Interests: Fluid dynamics, Quantum mechanics, Molecular dinamics, Monte Carlo simulation, Solution growth

Special Issue Information

Dear Colleagues,

Multicrystalline silicon (mc-Si) is widely used for substrates of solar cells. It is well understood that there is an advantage in the production cost in a mc-Si ingot in comparison to a single crystal Si, although the quality of mc-Si ingot should be improved further.  

To realize a high energy conversion efficiency of mc-Si solar cells, the development of crystal growth technology is required. Furthermore, the fundamental understanding of crystal growth mechanism of mc-Si, mechanism of  defects formation, and evaluation of mc-Si wafers are crucial.

We invite investigators to submit papers which discuss the development of high quality multicrystalline Si for solar cells, including bulk ingots and thin films.

The potential topics include:

  • Crystal growth of mc-Si ingot
  • Crystal growth of mc-Si thin films
  • Crystal growth mechanisms of mc-Si
  • Defects formation and their property in mc-Si
  • Evaluation of mc-Si wafers
  • Property of solar cells based on mc-Si
  • Crystal growth of new materials based on Si

Prof. Dr. Kozo Fujiwara
Prof. Dr. Chung-wen Lan
Prof. Dr. Koichi Kakimoto
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1200 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Crystal growth
  • Crystal/melt interface
  • Bulk ingot
  • Thin films
  • Dislocation, grain boundary, twin boundary, impurity
  • Nucleation, grain orientation
  • Computations
  • Minority carrier lifetime

Published Papers (1 paper)

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Research

Open AccessArticle Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional Solidification
Crystals 2018, 8(6), 244; https://doi.org/10.3390/cryst8060244
Received: 26 April 2018 / Revised: 1 June 2018 / Accepted: 5 June 2018 / Published: 7 June 2018
PDF Full-text (1661 KB) | HTML Full-text | XML Full-text
Abstract
This paper reports the relationship between oxygen concentration and dislocation multiplication in silicon crystals during directional solidification using numerical analysis. Based on the Alexander–Haasen–Sumino model, this analysis involved oxygen diffusion from the bulk to dislocation cores during crystal growth and annealing processes in
[...] Read more.
This paper reports the relationship between oxygen concentration and dislocation multiplication in silicon crystals during directional solidification using numerical analysis. Based on the Alexander–Haasen–Sumino model, this analysis involved oxygen diffusion from the bulk to dislocation cores during crystal growth and annealing processes in a furnace. The results showed that the dislocation density mainly increased during cooling process, rather than crystal growth, when the effect of oxygen diffusion to dislocation cores was ignored. On the contrary, the dislocation density increased during both crystal growth and cooling processes when the effect of interstitial oxygen diffusion was considered. At a dislocation density larger than 1.0 × 105 cm−2, the interstitial oxygen concentration in bulk decreased due to the diffusion process, if interstitial oxygen atoms were between dislocations, whereas the concentration at dislocation cores increases. Full article
(This article belongs to the Special Issue Growth and Evaluation of Multicrystalline Silicon)
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