Abstract: Using X-ray diffraction (XRD), it was confirmed that the deposition of hole-transporting materials (HTM) on a CH3NH3PbI3 perovskite layer changed the CH3NH3PbI3 perovskite crystal, which was due to the material exchanging phenomena between the CH3NH3PbI3 perovskite and HTM layers. The solvent for HTM also changed the perovskite crystal. In order to suppress the crystal change, doping by chloride ion, bromide ion and 5-aminovaleric acid was attempted. However, the doping was unable to stabilize the perovskite crystal against HTM deposition. It can be concluded that the CH3NH3PbI3 perovskite crystal is too soft and flexible to stabilize against HTM deposition.
Abstract: Förster Resonance Energy Transfer (FRET) enables the observation of interactions at the nanoscale level through the use of fluorescence optical imaging techniques. In FRET, fluorescence lifetime imaging can be used to quantify the fluorescence lifetime changes of the donor molecule, which are associated with proximity between acceptor and donor molecules. Among the FRET parameters derived from fluorescence lifetime imaging, the percentage of donor that interacts with the acceptor (in proximity) can be estimated via model-based fitting. However, estimation of the lifetime parameters can be affected by the acquisition parameters such as the temporal characteristics of the imaging system. Herein, we investigate the effect of various gate widths on the accuracy of estimation of FRET parameters with focus on the near-infrared spectral window. Experiments were performed in silico, in vitro, and in vivo with gate width sizes ranging from 300 ps to 1000 ps in intervals of 100 ps. For all cases, the FRET parameters were retrieved accurately and the imaging acquisition time was decreased three-fold. These results indicate that increasing the gate width up to 1000 ps still allows for accurate quantification of FRET interactions even in the case of short lifetimes such as those encountered with near-infrared FRET pairs.
Abstract: To fulfill the functionality demands from the fast developing optical networks, a hybrid integration approach allows for combining the advantages of various material platforms. We have established a polymer-based hybrid integration platform (polyboard), which provides flexible optical input/ouptut interfaces (I/Os) that allow robust coupling of indium phosphide (InP)-based active components, passive insertion of thin-film-based optical elements, and on-chip attachment of optical fibers. This work reviews the recent progress of our polyboard platform. On the fundamental level, multi-core waveguides and polymer/silicon nitride heterogeneous waveguides have been fabricated, broadening device design possibilities and enabling 3D photonic integration. Furthermore, 40-channel optical line terminals and compact, bi-directional optical network units have been developed as highly functional, low-cost devices for the wavelength division multiplexed passive optical network. On a larger scale, thermo-optic elements, thin-film elements and an InP gain chip have been integrated on the polyboard to realize a colorless, dual-polarization optical 90° hybrid as the frontend of a coherent receiver. For high-end applications, a wavelength tunable 100Gbaud transmitter module has been demonstrated, manifesting the joint contribution from the polyboard technology, high speed polymer electro-optic modulator, InP driver electronics and ceramic electronic interconnects.
Abstract: In the paper, we review our work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing. We elaborate on the integration strategy and describe a broad range of devices realized on this platform covering a wavelength range from 850 nm to 3.85 μm.
Abstract: A novel integrated microwave photonic isolator is presented. It is based on the timed drive of a pair of optical modulators, which transmit a pulsed or oscillating optical signal with low loss, when driven in phase. A signal in the reverse propagation direction will find the modulators out of phase and, hence, will experience high loss. Optical and microwave isolation ratios were simulated to be in the range up to 10 dB and 20 dB, respectively, using parameters representative for the indium phosphide platform. The experimental realization of this device in the hybrid silicon platform showed microwave isolation in the 9 dB–22 dB range. Furthermore, we present a design study on the use of these isolators inside a ring mode-locked laser cavity. Simulations show that unidirectional operation can be achieved, with a 30–50-dB suppression of the counter propagating mode, at limited driving voltages. The potentially low noise and feedback-insensitive operation of such a laser makes it a very promising candidate for use as on-chip microwave or comb generators.
Abstract: We present an optical microfiber-lithium niobate on insulator (MF-LNOI) hybrid waveguide for efficient second-order nonlinear processes. The structure combines the advantages of low-loss fiber and high-nonlinearity waveguide systems. We demonstrate the possibility of phase matching between fundamental and second harmonics in a wide spectral and dimensional range, and efficient second harmonic generation over sub-millimeter propagation distances, both of which are very attractive for high-density on-chip integration.