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J. Manuf. Mater. Process. 2017, 1(1), 6; doi:10.3390/jmmp1010006

An Overview on the Formation and Processing of Nitrogen-Vacancy Photonic Centers in Diamond by Ion Implantation

1
Department of Physics, Astronomy, and Materials Science, Missouri State University, Springfield, MO 65897, USA
2
Department of Electrical Engineering, Georgia Southern University, Statesboro, GA 30458, USA
*
Author to whom correspondence should be addressed.
Received: 24 July 2017 / Revised: 12 August 2017 / Accepted: 21 August 2017 / Published: 25 August 2017
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Abstract

Nitrogen-vacancy (NV) in diamond possesses unique properties for the realization of novel quantum devices. Among the possibilities in the solid state, a NV defect center in diamond stands out for its robustness—its quantum state can be initialized, manipulated, and measured with high fidelity at room temperature. In this paper, we illustrated the formation kinetics of NV centers in diamond and their transformation from one charge state to another. The controlled scaling of diamond NV center-based quantum registers relies on the ability to position NV defect centers with high spatial resolution. Ion irradiation technique is widely used to control the spatial distribution of NV defect centers in diamond. This is addressed in terms of energetics and kinetics in this paper. We also highlighted important factors, such as ion struggling, ion channeling, and surface charging, etc. These factors should be considered while implanting energetic nitrogen ions on diamond. Based on observations of the microscopic structure after implantation, we further discussed post-annealing treatment to heal the damage produced during the ion irradiation process. This article shows that the ion implantation technique can be used more efficiently for controlled and efficient generation of NV color centers in diamond, which will open up new possibilities in the field of novel electronics and computational engineering, including the art of quantum cryptography, data science, and spintronics. View Full-Text
Keywords: diamond processing; ion implantation; NV color centers; defect engineering; energetics for defects; ion struggling; ion channeling diamond processing; ion implantation; NV color centers; defect engineering; energetics for defects; ion struggling; ion channeling
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Haque, A.; Sumaiya, S. An Overview on the Formation and Processing of Nitrogen-Vacancy Photonic Centers in Diamond by Ion Implantation. J. Manuf. Mater. Process. 2017, 1, 6.

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J. Manuf. Mater. Process. EISSN 2504-4494 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
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