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Proceedings 2017, 1(4), 428; doi:10.3390/proceedings1040428

WO3-Doped Indium Oxide Thick Films for Ozone Detection at Low Temperature

Department of Applied Science and Technology, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
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Author to whom correspondence should be addressed.
Published: 18 August 2017
(This article belongs to the Proceedings of Eurosensors 2017)
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Abstract

Ozone, a strong oxidizing gas, has dramatically increased its concentration in the troposphere during the last decades. Since high O3 concentrations are hazardous to human health, the development of effective methods and economic devices to detect this gas is an urgent need. In this frame, In2O3 is well known as an n-type ozone sensitive and selective material, generally displaying its optimal sensing capability in the temperature range 200–350 °C. To enhance the sensing capability of In2O3 and to decrease its operative temperature, in this work, commercial In2O3 powders were doped with 2.5 wt. % WO3. Pure and doped-In2O3 materials were used to develop sensing devices by screen-printing technology. Resistance measurements were performed in the temperature range 25 °C–150 °C under 200–500 ppb O3. Best results were obtained at 75 °C with sensor’s responses as high as 40 under 200 ppb of ozone.
Keywords: ozone detection; W-doped indium oxide; thick film ozone detection; W-doped indium oxide; thick film
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Ziegler, D.; Marchisio, A.; Palmero, P.; Tulliani, J.-M. WO3-Doped Indium Oxide Thick Films for Ozone Detection at Low Temperature. Proceedings 2017, 1, 428.

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