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Proceedings 2017, 1(4), 320; doi:10.3390/proceedings1040320

Optical and Morphological Analysis of c-Si/PSi and c-Si/PSi/MWCNT/SiOx Heterostructures

IC-CIDS Benemérita Universidad Autónoma de Puebla, Ed. IC5 o IC6, Col. San Manuel, C.P. 72570 Puebla, Pue, Mexico
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
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Published: 9 August 2017
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Abstract

In the present work, the optical and morphological properties of Porous Silicon (PSi) in the c-Si-n/PSi and c-Si-n/SiP-n/MWCNT/SiOx structures are studied and analyzed. The PSi layer is grown on n-type c-Si (<0.005 Ω·cm <100>) by electrochemical anodization using different currents as: 10, 50 and 100 mA. The etching solution used was C2H6O:HF:C3H8O3 in a proportion of 6:3:1 by volume, respectively. The deposition of multi wall carbon nanotubes (MWNTs) on the PSi was done by spin coating, and later the surface was passivated by thermal oxidation. The porosity and thickness were obtained by gravimetry. UV-VIS spectroscopy and photoluminescence were used to obtain the optical properties and SEM was used to analyze the morphology.
Keywords: porous silicon; MWNTs; photoluminescence; morphology; SEM porous silicon; MWNTs; photoluminescence; morphology; SEM
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Huerta, N.V.; López, J.A.L.; Luz, J.D.A.H.; Barojas, E.G.; Jimenez, M.A.D. Optical and Morphological Analysis of c-Si/PSi and c-Si/PSi/MWCNT/SiOx Heterostructures. Proceedings 2017, 1, 320.

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