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Proceedings 2017, 1(4), 308; doi:10.3390/proceedings1040308

Incorporation of ZnO Nanostructures in MIS Architecture through Chemical Routes

1
Facultad de Ingeniería Química, Benemérita Universidad Autónoma de Puebla, 5013 Puebla, Pue., Mexico
2
IC-CIDS Benemérita Universidad Autónoma de Puebla, Ed. IC5 o IC6, Col. San Manuel, C.P. 72570 Puebla, Pue., Mexico
3
INAOE, Electronics Department, Apartado 51, 72000 Puebla, Mexico
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
*
Author to whom correspondence should be addressed.
Published: 18 August 2017
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Abstract

Because it’s physical properties, ZnO is considered a potential semiconductor compound for fabricating electronic and optoelectronic functional devices. In this regard, several growth techniques have been developed in order to meet the requirements of commercial devices based in this material. On the pathway for improving the performance of the current devices, low-dimensional ZnO structures seem a promising alternative. Here, we report the process to obtain a metal-insulator-semiconductor (MIS) structure based on ZnO nanostructures grown on the surface of an anodized aluminum substrate (Al2O3/Al) by chemical routes.
Keywords: ZnO; SEM; morphology; XRD; MIS ZnO; SEM; morphology; XRD; MIS
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

García, R.J.A.; Morales, A.E.; López, J.C.; Jimenez, M.D.; Ramírez, N.C.; López, J.A.L. Incorporation of ZnO Nanostructures in MIS Architecture through Chemical Routes. Proceedings 2017, 1, 308.

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