Next Article in Journal
A Thermally Tunable 1 × 4 Channel Wavelength Demultiplexer Designed on a Low-Loss Si3N4 Waveguide Platform
Next Article in Special Issue
Transfer Printed Nanomembranes for Heterogeneously Integrated Membrane Photonics
Previous Article in Journal
Material Exchange Property of Organo Lead Halide Perovskite with Hole-Transporting Materials
Previous Article in Special Issue
Hybrid Photonic Integration on a Polymer Platform
Article Menu

Export Article

Open AccessArticle
Photonics 2015, 2(4), 1054-1064; doi:10.3390/photonics2041054

Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions

1
Laboratoire de Photonique et de Nanostructures, route de Nozay, F-91460 Marcoussis, France
2
Institut P’, CNRS Université de Poitiers-Bd Marie Pierre Cuire, B.P. 30179, 86962 Futuroscope-Chasseneuil Cedex, France
3
Institut d’Electronique Fondamentale, Université d’Orsay, 91405 Orsay, France
4
Laboratoire Charles Fabry, UMR 8501, Institut d’Optique, CNRS, Univ Paris Sud 11, 2 Avenue Augustin Fresnel, 91127 Palaiseau Cedex, France
*
Author to whom correspondence should be addressed.
Received: 30 September 2015 / Revised: 22 October 2015 / Accepted: 26 October 2015 / Published: 29 October 2015
View Full-Text   |   Download PDF [448 KB, uploaded 29 October 2015]   |  

Abstract

Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si) surfaces and nanostructured ones, using Silicon on Isolator (SOI) or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wavelength selective transmission. Such an oxide-free interface associated with the nanostructured design of the guiding geometry has great potential for both electrical and optical operation of improved hybrid devices. View Full-Text
Keywords: silicon photonics hybrid integration; III-V materials; wafer bonding; oxide-free bonding; silicon waveguide nanopatterning; telecom optical functions silicon photonics hybrid integration; III-V materials; wafer bonding; oxide-free bonding; silicon waveguide nanopatterning; telecom optical functions
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Pantzas, K.; Itawi, A.; Sagnes, I.; Patriarche, G.; Le Bourhis, E.; Lupu, A.; Benisty, H.; Talneau, A. Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions. Photonics 2015, 2, 1054-1064.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Photonics EISSN 2304-6732 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top