Highly Sensitive ZnO(Ga, In) for Sub-ppm Level NO2 Detection: Effect of Indium Content
AbstractNanocrystalline ZnO, ZnO(Ga), and ZnO(Ga, In) samples with different indium contents were prepared by wet-chemical method and characterized in detail by ICP-MS and XRD methods. Gas sensing properties toward NO2 were studied at 150–450 °C by DC conductance measurements. The optimal temperature for gas sensing experiments was determined. The dependence of the ZnO(Ga, In) sensor signal to NO2 at 250 °C correlates with the change of conductivity of the samples. The introduction of indium into the system leads to an increase in the values of the sensor signal in the temperature range T < 250 °C. The investigation of the local sample conductivity by scanning spreading resistance microscopy demonstrates that, at high indium content, the sensor properties are determined by the In–Ga–Zn–O layer that forms on the ZnO surface. View Full-Text
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Vorobyeva, N.; Rumyantseva, M.; Filatova, D.; Spiridonov, F.; Zaytsev, V.; Zaytseva, A.; Gaskov, A. Highly Sensitive ZnO(Ga, In) for Sub-ppm Level NO2 Detection: Effect of Indium Content. Chemosensors 2017, 5, 18.
Vorobyeva N, Rumyantseva M, Filatova D, Spiridonov F, Zaytsev V, Zaytseva A, Gaskov A. Highly Sensitive ZnO(Ga, In) for Sub-ppm Level NO2 Detection: Effect of Indium Content. Chemosensors. 2017; 5(2):18.Chicago/Turabian Style
Vorobyeva, Natalia; Rumyantseva, Marina; Filatova, Darya; Spiridonov, Felix; Zaytsev, Vladimir; Zaytseva, Anna; Gaskov, Alexander. 2017. "Highly Sensitive ZnO(Ga, In) for Sub-ppm Level NO2 Detection: Effect of Indium Content." Chemosensors 5, no. 2: 18.